SGM3003XMS中文资料

SGM3003

Ultra Low ON-Resistance, Low Voltage, SPDT Analog Switch

REV. C

Shengbang Microelectronics Co, Ltd

SGM3003

2

ORDERING INFORMATION

MODEL PIN- PACKAGE

SPECIFIED TEMPERATURE

RANGE

ORDERING NUMBER

PACKAGE MARKING

PACKAGE OPTION

SGM3003

MSOP-8

- 40°C to +125°C

SGM3003XMS/TR SGM3003XMS Tape and Reel, 3000

ABSOLUTE MAXIMUM RATINGS

V + to GND....................................................................- 0.3V to +6V

Analog, Digital voltage range (1)..................... - 0.3V to V + + 0.3V

Continuous Current NO, NC, or COM..........................±300mA

Peak Current NO, NC, or COM .....................................±500mA

Operating Temperature Range...........................- 40°C to +125°C

Junction Temperature...........................................................+150°C Storage Temperature.............................................- 65°C to +150°C Package Thermal Resistance @ T A = 25℃

MSOP-8, θJA .....................................................................................216/W ℃

Lead Temperature (soldering, 10s).......................................260°C

ESD Susceptibility HBM..........................................................................................2000V

MM..............................................................................................400V

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

(1) Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

PIN DESCRIPTION

NAME PIN

FUNCTION

V + 4 Power supply GND 3

ground IN 6

Digital control pin to connect the COM terminal to the NO or NC terminals COM 1

Common terminal NO 8

Normally-open terminal NC 2

Normally-closed terminal N.C. 5, 7

No internal connection

Note: NO, NC and COM terminal may be an input or output.

ELECTRICAL CHARACTERISTICS

(V + = +5 V ± 10%, GND = 0 V, T A = - 40°C to +125°C, unless otherwise noted. Typical values are at T A = + 25°C.)

SGM3003 PARAMETER SYMBOL CONDITIONS

+25℃

- 40℃ to

+125℃ UNITS

MIN/MAX

ANALOG SWITCH 0 V MIN Analog Signal Range V NO , V NC , V COM

V + V

MAX 0.5 Ω TYP On-Resistance R ON 0 ≤ V NO or V NC ≤ V +, I COM = ?10 mA,

Test Circuit 1

0.9 1.1 Ω MAX 0.13

Ω TYP

On-Resistance Flatness R FLAT(ON)

0 ≤ V NO or V NC ≤ V+, I COM = ?10 mA, Test Circuit 1

0.2 0.4 Ω MAX

LEAKAGE CURRENTS ±4 nA TYP Source OFF Leakage current I NC(OFF), I NO(OFF) V NO or V NC = 4.5V/1V, V COM = 1V/4.5V, V + = +5.5V ,Test Circuit 2 ±10 ±1000 nA MAX ±4 nA TYP

Channel ON Leakage current I NC(ON), I NO(ON),

I COM(ON)

V NO or V NC = V COM = 1V or 4.5V, V + = +5.5V , Test Circuit 3

±10

±1000 nA MAX

DIGITAL INPUTS Input High Voltage V INH 2.4 V MIN Input Low Voltage V INL 0.8 V MAX ±0.01 μA TYP Input Current

I INL or I INH

V IN = V INH or V INH

±0.1

±1 μA MAX

DYNAMIC CHARACTERISTICS Turn-On Time t ON V NO or V NC = 3V,

R L = 300Ω, C L = 35pF, Test Circuit 4 21 ns TYP Turn-Off Time t OFF V NO or V NC = 3V,

R L = 300Ω, C L = 35pF, Test Circuit 4 9 ns TYP Charge Injection, Q C L = 1.0nF, V G = 0V, R G = 0, Test Circuit 5 5

pC TYP

Break-Before-Make Time Delay t D V NO1 or V NC1 = V NO2 or V NC2 = 3V, R L = 300Ω, C L = 35pF, Test Circuit 6 10 ns TYP f = 100KHz

-55 dB TYP Off Isolation

O ISO R L = 50Ω, C L = 5pF,

Test Circuit 7 f = 10KHz -75

dB

TYP

Total Harmonic Distortion THD

f = 20Hz to 20KHz, V COM = 3.5V P-P , R L = 600Ω, C L = 50pF

0.065 % TYP Bandwidth –3 dB BW R L = 50Ω, C L = 5pF, Test Circuit 8 30 MHz

TYP

Source OFF Capacitance C NC(OFF), C NO(OFF)

82

pF TYP

Channel ON Capacitance C NC(ON), C NO(ON),

C COM(ON)

380 pF TYP

POWER REQUIREMENTS 0.001 μA TYP Power Supply Current I +

V + = +5.5V, V IN = 0V or 5V

1 μA MAX

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS

(V + = +3 V ± 10%, GND = 0 V, T A = - 40°C to +125°C, unless otherwise noted. Typical values are at T A = + 25°C.)

SGM3003 PARAMETER SYMBOL CONDITIONS

+25℃

- 40℃ to

+125℃ UNITS

MIN/MAX

ANALOG SWITCH 0 V MIN Analog Signal Range V NO , V NC , V COM

V + V

MAX 0.6 Ω TYP On-Resistance R ON 0 ≤ V NO or V NC ≤ V +, I COM = ?10 mA,

Test Circuit 1

1.0 1.3 Ω MAX 0.18

Ω TYP

On-Resistance Flatness R FLAT(ON)

0 ≤ V NO or V NC ≤ V+, I COM = ?10 mA, Test Circuit 1

0.3 0.4 Ω MAX

LEAKAGE CURRENTS ±5 nA TYP Source OFF Leakage current I NC(OFF), I NO(OFF) V NO or V NC = 3V/1V, V COM = 1V/3V, V + = +3.3V ,Test Circuit 2 ±11 ±1000 nA MAX ±5 nA TYP

Channel ON Leakage current I NC(ON), I NO(ON),

I COM(ON)

V NO or V NC = V COM = 1V or 3V, V + = +3.3V , Test Circuit 3

±11

±1000 nA MAX

DIGITAL INPUTS Input High Voltage V INH 2.0 V MIN Input Low Voltage V INL 0.4 V MAX ±0.01 μA TYP Input Current

I INL or I INH

V IN = V INH or V INH

±0.1

±1 μA MAX

DYNAMIC CHARACTERISTICS Turn-On Time t ON V NO or V NC = 2V,

R L = 300Ω, C L = 35pF, Test Circuit 4 32 ns TYP Turn-Off Time t OFF V NO or V NC = 2V,

R L = 300Ω, C L = 35pF, Test Circuit 4 20 ns TYP Charge Injection, Q C L = 1.0nF, V G = 0V, R G = 0, Test Circuit 5 10

pC TYP

Break-Before-Make Time Delay t D V NO1 or V NC1 = V NO2 or V NC2 = 2V, R L = 300Ω, C L = 35pF, Test Circuit 6 12 ns TYP f = 100KHz

-55 dB TYP Off Isolation

O ISO R L = 50Ω, C L = 5pF,

Test Circuit 7 f = 10KHz -75

dB

TYP

Total Harmonic Distortion THD

f = 20Hz to 20KHz, V COM = 2V P-P , R L = 600Ω, C L = 50pF

0.06 % TYP Bandwidth –3 dB BW R L = 50Ω, C L = 5pF, Test Circuit 8 30 MHz

TYP

Source OFF Capacitance C NC(OFF), C NO(OFF)

82

pF TYP

Channel ON Capacitance C NC(ON), C NO(ON),

C COM(ON)

380 pF TYP

POWER REQUIREMENTS 0.001 μA TYP Power Supply Current I +

V + = +3.3V, V IN = 0V or 3V

1 μA MAX

Specifications subject to change without notice.

TYPICAL PERFORMANCE CHARACTERISTICS

TEST CIRCUITS

10mA V NO or V

Test Circuit 1. On Resistance

COM

V NO or V I

COM

V NO or V

Test Circuit 2: Off Leakage Test Circuit 3: On Leakage

V OUT

V NO or V V V IN

Test Circuit 4: Switching Times

V G

V +

0V

Test Circuit 5: Charge Injection

TEST CIRCUITS(Cont.)

V OUT

V NO V OUT

V IN

V NO or V NC

Test Circuit 6. Break-Before-Make Time Delay, t D

V OUT

Source Signal

Test Circuit 7. Off Isolation

V OUT V Source Signal

Test Circuit 8. Bandwidth

PACKAGE OUTLINE DIMENSIONS MSOP-8

REVISION HISTORY

Location Page 11/06— Data Sheet changed from REV.A to REV.B

Changes to ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 10/07— Data Sheet changed from REV.B to REV.C

Changes to TYPICAL PERFORMANCE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Shengbang Microelectronics Co, Ltd

Unit 3, ChuangYe Plaza

No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park

Harbin Development Zone

150078

HeiLongJiang

Harbin,

China

P.R.

Tel.: 86-451-84348461

Fax: 86-451-84308461

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