当前位置：文档库 › BUK555-200中文资料

BUK555-200中文资料

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER

MAX.MAX.UNIT logic level field-effect power transistor in a plastic envelope.BUK555

-200A

-200B The device is intended for use in V DS Drain-source voltage 200200V Switched Mode Power Supplies I D Drain current (DC)

1413A (SMPS), motor control, welding,P tot Total power dissipation 125125W DC/DC and AC/DC converters, and T j

Junction temperature 175175?C in automotive and general purpose R DS(ON)

Drain-source on-state 0.23

0.28

switching applications.

resistance;V GS = 5 V

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER

CONDITIONS MIN.MAX.UNIT V DS Drain-source voltage --200V V DGR Drain-gate voltage R GS = 20 k ?-200V ±V GS Gate-source voltage

--15V ±V GSM Non-repetitive gate-source voltage t p ≤ 50 μs -20

V -200A -200B I D Drain current (DC)T mb = 25 ?C -1413A I D Drain current (DC)

T mb = 100 ?C -109.2A I DM Drain current (pulse peak value)T mb = 25 ?C -56

A P tot Total power dissipation T mb = 25 ?C -125W T stg Storage temperature -- 55175?C T j

Junction Temperature

--175?C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction to -- 1.2K/W mounting base

R th j-a

Thermal resistance junction to -60

-K/W

ambient

STATIC CHARACTERISTICS

= 25 ?C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT

(BR)DSS Drain-source breakdown V

= 0 V; I

= 0.25 mA200--V voltage

GS(TO)Gate threshold voltage V

= V

; I

= 1 mA 1.0 1.5 2.0V

I DSS Zero gate voltage drain current V

= 200 V; V

= 0 V; T

= 25 ?C-110μA

I DSS Zero gate voltage drain current V

= 200 V; V

= 0 V; T

=125 ?C-0.1 1.0mA

I GSS Gate source leakage current V

= ±10 V; V

= 0 V-10100nA

DS(ON)Drain-source on-state V

= 5 V;BUK555-200A-0.20.23?resistance I

= 7 A BUK555-200B-0.240.28?

DYNAMIC CHARACTERISTICS

= 25 ?C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT

g fs Forward transconductance V

= 25 V; I

= 7 A8.015-S

iss Input capacitance V

= 0 V; V

= 25 V; f = 1 MHz-16002000pF

oss Output capacitance-180250pF

rss

Feedback capacitance-5580pF

d on Turn-on delay tim

e V

= 30 V; I

= 3 A;-2540ns

t r Turn-on rise time V

= 5 V; R

= 50 ?;-4575ns

d off Turn-off delay tim

e R

gen

= 50 ?-140180ns

Turn-off fall time-4055ns

L d Internal drain inductance Measured from contact screw on- 3.5-nH

tab to centre of die

L d Internal drain inductance Measured from drain lead 6 mm- 4.5-nH

from package to centre of die

L s Internal source inductance Measured from source lead 6 mm-7.5-nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

= 25 ?C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT

I DR Continuous reverse drain---14A current

I DRM Pulsed reverse drain current---56A

SD Diode forward voltage I

= 14 A ; V

= 0 V- 1.0 1.5V

t rr Reverse recovery time I

= 14 A; -dI

/dt = 100 A/μs;-200-ns

rr Reverse recovery charge V

= 0 V; V

= 30 V-0.25-μC

AVALANCHE LIMITING VALUE

= 25 ?C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT

DSS Drain-source non-repetitive I

= 14 A ; V

≤ 100 V ;--100mJ unclamped inductive turn-off V

= 5 V ; R

= 50 ?

energy

MECHANICAL DATA

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for TO220 envelopes.

3. Epoxy meets UL94 V0 at 1/8".

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information

Where application information is given, it is advisory and does not form part of the specification.

? Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.