STW20NB50
N - CHANNEL 500V - 0.22? - 20A - TO-247
PowerMESH ? MOSFET
s
DS(on)s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100o C s VERY LOW INTRINSIC CAPACITANCES s
GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage technology,SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances.The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R DS (on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ?
June 1998
ABSOLUTE MAXIMUM RATINGS
SD DD (BR)DSS JMAX
1/8
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) OFF
ON (?
)
DYNAMIC
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(?
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2:
Unclamped Inductive Waveform
Fig. 4:
Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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? 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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STW20NB50