ILD205T中文资料

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Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package

Features

?Two Channel Coupler

?SOIC-8A Surface Mountable Package ?Standard Lead Spacing of .05 "

?

Available only on Tape and Reel Option (Con-forms to EIA Standard 481-2)

?Isolation Test Voltage, 3000 V RMS

?Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering ?Lead-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

?UL1577, File No. E52744 System Code Y

Description

The I LD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infra-red LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of elec-trical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high den-sity applications with limited space. In addition to elim-inating through-holes requirements, this package conforms to standards for surface mounted devices.

A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adja-cent circuits. The high BV CEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.

Order Information

For additional information on the available options refer to Option Information.

Part

Remarks

ILD205T CTR 40 - 80 %, SOIC-8ILD206T CTR 63 - 125 %, SOIC-8ILD207T CTR 100 - 200 %, SOIC-8ILD211T CTR > 20 %, SOIC-8ILD213T CTR > 100 %, SOIC-8ILD217T

CTR > 100 %, SOIC-8

https://www.wendangku.net/doc/786260398.html, Document Number 83647

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Output

Coupler

Electrical Characteristics

T amb = 25°C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Test condition

Symbol Value Unit Peak reverse voltage V R

6.0V Peak pulsed current

1.0 μs, 300 pps

1.0A Continuous forward current per channel

30mA Power dissipation P diss

50mW Derate linearly from 25°C

0.66

mW/°C

Parameter

T est condition

Symbol Value Unit Collector-emitter breakdown voltage BV CEO 70V Emitter-collector breakdown voltage BV ECO 7.0V Power dissipation per channel P diss

125mW Derate linearly from 25°C

1.67

mW/°C

Parameter

Test condition

Symbol Value Unit Total package dissipation

ambient (2 LEDs + 2 detectors, 2 channels)

P tot

300

mW

Derate linearly from 25°C 4.0mW/°C Storage temperature T stg - 55 to + 150°C Operating temperature T amb - 55 to + 100

°C Soldering time from 260°C

T sld

10

sec.

Parameter

Test condition

Symbol Min

Typ.Max Unit Forward voltage I F = 10 mA V F 1.2 1.55V Reverse current V R = 6.0 V I R 0.1100

μA Capacitance

V R = 0

C O

25

pF

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Output

Coupler

Current Transfer Ratio

Parameter

T est condition

Symbol Min T yp.

Max

Unit Collector-emitter breakdown voltage

I C = 10 μA BV CEO 70V Emitter-collector breakdown voltage

I E = 10 μA BV ECO 7.0

V Collector-emitter leakage current

V CE = 10 V, I F = 0I CEO 5.050

nA Collector-emitter capacitance

V CE = 0

C CE

10

pF

Parameter

T est condition

Symbol Min

T yp.

Max Unit Collector-emitter saturation voltage

I F = 10 mA, I C = 2.5 mA

V CE(sat)0.4

V Capacitance (input-output)C IO 0.5

pF Isolation test voltage t = 1.0 sec.

V ISO 3000

V RMS Resistance, input to output

R IO

100G ?

Parameter

T est condition

Part Symbol Min T yp.

Max Unit DC Current T ransfer Ratio

V CE = 5.0 V, I F = 10 mA

ILD205T CTR DC 4080%ILD206T CTR DC 63125%ILD207T CTR DC 100200

%ILD211T CTR DC 20%ILD213T

CTR DC 100%V CE = 5.0 V, I F = 1.0 mA

ILD205T CTR DC 1330%ILD206T CTR DC 2245%ILD207T CTR DC 3470%ILD217T

CTR DC

100

120%

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Switching Characteristics

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter

Test condition

Symbol Min Typ.

Max

Unit Turn-on time I C = 2.0 mA, R L = 100 ?, V CC = 5.0 V

t on 5.0μs Turn-off time

I C = 2.0 mA, R L = 100 ?, V CC = 5.0 V

t off

4.0

μs

Figure 1. Forward Current vs. Forward Voltage

Figure 2. Collector-Emitter Current vs. Temperature

Vf -LED Forward Voltage (V)

I f -L E D C u r r e n t (m a )

iild205t_01

iild205t_02

2

46810

12

1.21.00.80.6

0.40.2

0.0

V CE -Collector to Emitter Voltage (V)N I c N o r m a l i z e d C o l l e c t o r C u r r e n t

Figure 3. Normalized CTR ce vs. Forward Current

Figure 4. Current Transfer Ratio (normalized) vs. Ambient

Temperature

iild205t_03

N C T R c e -N o

r m a l i z e d C T R c e

.01

.1110100

1.21.00.80.60.40.20.0I F -LED Current -(mA)

iild205t_04

20

40

6080100

1.21.00.80.60.40.20.0

T A -Temperature (°C)

N C T R c e -n o r m a l i

z e d C T R c e

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Figure 5. Switching Speed vs. Load Resistor Figure 6. Collector Current vs. Ambient Temperature

iild205t_01

S w i t c h i n g s p e e d (μs )

.1110100

103

102

101

100

Rl -Load Resistor (K ?)ˇ

Ta -Temperature (°C)

I c e o -L e a k a g e C u r r e n t -(μa )

iild205t_06

Vce=50V

Vce=50V

Figure 7. Power Dissipation vs. Ambient Temperature

iild205t_07

200

150

100

500T A -Ambient Temperature (°C)

P a c k a g e P o w e r D i s s i p a t i o n (

m w )

25

50

75

100

125

Figure 8. Switching Test Circuit

iild205t_08

t

Package Dimensions in Inches (mm)

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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