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MM018-06L中文资料

600 / 1200 Volts 150 Amps

? Available in Low Conduction Loss Class as MM118-xxL or Fast

Switching Class as MM118-xxF ? Compact and rugged construction offering weight and space savings ? Available with PC board solderable pins (see mechanical outline below)

or threaded terminals (add “T” suffix to part number, see option below)? HPM (Hermetic Power Module)? Isolation voltage capability (in reference to the base) in excess of 3kV ? Very low thermal resistance ? Thermally matched construction provides excellent temperature and

power cycling capability ? Additional voltage ratings or terminations available upon request

PART NUMBER

SYMBOL MM118-06MM118-12Collector-to-Emitter Breakdown Voltage (Gate shorted to Emitter), @ T j ≥ 25°C

BV CES 600 V 1200 V Collector-to-Gate Breakdown Voltage @ T j ≥ 25°C, R GS = 1M ?

BV CGR 600 V 1200 V Gate-to-Emitter Voltage continuous transient V GES V GEM +/- 20 V +/- 30 V +/- 20 V

+/- 30 V Continuous Collector Current T j =25°C

T j = 90°C I C25I C9060 A 32 A 52 A 33 A Peak Collector Current, pulsewidth limited by T j max I CM 120 A 104 A Power Dissipation

P D

165 W 165 W Thermal resistance, junction to base per switch

R Θjc , max R Θ, typ

0.75°C/W 0.5°C/W

Maximum Ratings per switch @ 25°C (unless otherwise specified)

3 PHASE N-CHANNEL INSULATED GATE

BIPOLAR

TRANSISTOR (IGBT)

BRIDGE

DESCRIPTION

SYMBOL CONDITIONS

PART MIN TYP.MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)BV CES V GS = 0 V, I C = 250 μA

MM118-06MM118-126001200V

Gate Threshold Voltage

V GE(th)

V CE = V GE , I C = 250 μA V CE = V GE , I C = 2.5 mA V CE = V GE , I C = 350 μA

MM118-06F MM118-06L MM118-12 2.544.5

45.5

5.07

6.5V

Gate-to-Emitter Leakage Current

I GES

V GE = ± 20V DC , V CE = 0 T J = 25°C T J = 125°C (ALL)±100±200

nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current)I CES V CE =0.8?BV CES T J = 25°C V GE = 0 V T J

= 125°C (ALL)2001000μA Collector-to-Emitter Saturation Voltage (1)

V CE(sat)

V GE = 15V, I C = 30A T J = 25°C I C = 60A T J = 25°C I C = 30A T J = 125°C I C = 30A T J = 25°C V GE = 15V, I C = 25A T J = 25°C I C = 50A T J = 25°C I C = 25A T J = 125°C MM118-06F MM118-06F MM118-06F MM018-06L MM118-12MM118-12MM118-12 2.23.52.22.22.73.43.3 2.9tbd tbd 2.53.2tbd 3.9

Forward Transconductance (1)g fs

V CE ≥ 10 V; I C = 30 A V CE ≥ 10 V; I C = 30 A

MM118-06F MM118-06L MM118-121578.5

201320S

Input Capacitance Output Capacitance

Reverse Transfer Capacitance

C ies C oes C res

V GE = 0 V, V CE = 25 V, f = 1 MHz

MM118-06F MM118-06L MM118-12MM118-06F MM118-06L MM118-12MM118-06F MM118-06L MM118-122500276016502302402507051110tbd tbd 2200tbd tbd 380tbd tbd 160pF

INDUCTIVE LOAD, Tj= 25°C (2,3)Turn-on Delay Time Rise Time

On Energy

Turn-off Delay Time Fall Time Off Energy

t d(on)t ri

E on t d(off)

t fi

E off

V GE = 15 V, L= 100 μH note 2, 3for MM118-06: V CE = 480 V,

I C = 30 A, R G = 4.7 ?for MM118-12: V CE = 600 V,

I C = 25 A, R G = 47 ?

MM118-06F MM118-06L MM118-12MM118-06F MM118-06L MM118-12MM118-12MM118-06F MM118-06L MM118-12MM118-06F MM118-06L MM118-12MM118-06F MM118-06L MM118-12

25607530130653.6175400420125400451.352.4

tbd tbd 110tbd tbd 100-tbd tbd 560175tbd 60---

ns ns ns ns ns ns mJ ns ns ns ns ns ns mJ mJ mJ

Electrical Parameters, per switch @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL MM118-06MM118-12Short Circuit Reverse Current (RBSOA) @ Tj= 125°C, V CE = 0.8 x V CES I max 64 A 66 A Junction and Storage Temperature Range (°C)T j, T stg -55 to +150

-55 to +150

Continuous Source Current (parallel Diode)I S 60 A 50 A Pulse Source Current (parallel Diode)

I SM

100 A

Maximum Ratings @ 25°C (unless otherwise specified) - continued

Datasheet# MSC0321A

INDUCTIVE LOAD, Tj= 125°C (2,3)

Turn-on Delay Time Rise Time

On Energy

Turn-off Delay Time Fall Time

Off Energy t d(on)

t ri

E on

t d(off)

t fi

E off

V GE = 15 V, L= 100 μH note 2, 3

for MM118-06: V CE = 480 V,

I C = 30 A, R G = 4.7 ?

for MM118-12: V CE= 600 V,

I C= 25 A, R G = 47 ?

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

130

4.2

250

540

420

260

600

4.2

tbd

1000

tbd

1500

tbd

Total Gate Charge

Gate-to-Emitter Charge

Gate-to-Collector (Miller) Charge Q g

Q ge

Q gc

V GE = 15 V,

for MM118-06: V CE = 300V, I C= 30 A

for MM118-12: V CE= 600 V, I C= 25 A

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

MM118-06F

MM118-06L

MM118-12

125

110

160

150

tbd

Antiparallel diode forward voltage (1)V F I E= 15 A T J = 25 °C

I E= 30 A T J = 25 °C

I E= 50 A T J = 25 °C

I E= 15 A T J = 150 °C

I E= 10 A T J = 25 °C

I E= 10 A T J = 100 °C MM118-06

MM118-06

MM118-12

1.7

1.9

2.4

1.5

1.3

Antiparallel diode reverse recovery time t rr I E= 10 A, dI E/dt= 100 A/us, T J= 25°C

I E= 30 A, dI E/dt= 100 A/us, T J= 25°C

I E= 10 A, dI E/dt= 100 A/us, T J= 25°C

I E= 10 A, dI E/dt= 100 A/us, T J= 125°C MM118-06

MM118-06

MM118-12

140

100

tbd

Antiparallel diode reverse recovery charge Q rr I E= 10 A, dI E/dt= 100 A/us, T J= 25°C

I E= 30 A, dI E/dt= 100 A/us, T J= 25°C

I E= 10 A, dI E/dt= 100 A/us, T J= 25°C

I E= 10 A, dI E/dt= 100 A/us, T J= 125°C MM118-06

MM118-06

MM118-12

160

320

tbd

800

Antiparallel diode peak recovery current I RM I E= 10 A, dI E/dt= 100 A/us, T J= 25°C

I E= 30 A, dI E/dt= 100 A/us, T J= 25°C

I E= 10 A, dI E/dt= 100 A/us, T J= 25°C

I E= 10 A, dI E/dt= 100 A/us, T J= 125°C MM118-06

MM118-06

MM118-12

4.2

tbd

Notes

(1) Pulse test, t ≤ 300 μs, duty cycle δ≤ 2%

(2) switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures.

(3) switching losses include “tail” losses

(4) Microsemi does not manufacture the igbt die; contact Microsemi for details.