当前位置：文档库 › MDD312-16N1中文资料

MDD312-16N1中文资料

1 - 3

423

IXYS reserves the right to change limits, test conditions and dimensions.

V RSM V RRM Type

V DSM

V DRM V V 13001200MDD 312-12N115001400MDD 312-14N117001600MDD 312-16N119001800MDD 312-18N121002000MDD 312-20N123002200

MDD 312-22N1

I FRMS =2x520 A I FAVM =2x310 A V RRM =1200-2200 V

Features

?International standard package

?Direct copper bonded Al 2O 3-ceramic with copper base plate ?Planar passivated chips ?Isolation voltage 3600 V~?UL registered E 72873Applications

?Supplies for DC power equipment ?DC supply for PWM inverter ?Field supply for DC motors ?Battery DC power supplies Advantages

?Simple mounting

?Improved temperature and power cycling ?Reduced protection circuits

Symbol Conditions

Maximum Ratings

I FRMS T VJ = T VJM

520A I FAVM T C = 100°C; 180° sine 310

A I FSM

T VJ = 45°C;t = 10 ms (50 Hz)10500A V R = 0t = 8.3 ms (60 Hz)11200A T VJ = T VJM t = 10 ms (50 Hz)9200A V R = 0

t = 8.3 ms (60 Hz)9800A ∫i 2dt

T VJ = 45°C t = 10 ms (50 Hz)551000A 2s V R = 0t = 8.3 ms (60 Hz)527000A 2s T VJ = T VJM t = 10 ms (50 Hz)423 000A 2s V R = 0

t = 8.3 ms (60 Hz)

403 000A 2s T VJ -40...+150

°C T VJM 150°C T stg -40...+125

°C V ISOL 50/60 Hz, RMS t = 1 min 3000V~I ISOL ≤ 1 mA

t = 1 s

3600

M d Mounting torque (M6)

4.5-7/40-62Nm/lb.in.Terminal connection torque (M8)11-13/97-115Nm/lb.in.

Weight Typical including screws 750g Symbol Conditions

Characteristic Values

I RRM T VJ = T VJM ; V R = V RRM 30mA V F I F = 600 A; T VJ = 25°C

1.32V V T0For power-loss calculations only 0.8V r T T VJ = T VJM

0.6m ?R thJC per diode; DC current 0.12K/W per module

0.06K/W R thJK per diode; DC current 0.16K/W per module

0.08K/W Q S T VJ = 125°C; I F = 400 A; -di/dt = 50 A/μs 700μC I RM 260A d S Creeping distance on surface 12.7mm d A Creepage distance in air

9.6mm a

Maximum allowable acceleration

m/s 2

High Power Diode Modules

Dimensions in mm (1 mm = 0.0394")

M8x20

Data according to IEC 60747 and refer to a single diode unless otherwise stated.3

2 - 3

423

IXYS reserves the right to change limits, test conditions and dimensions.

Fig. 6Single phase rectifier bridge: Power dissipation vs. direct output current

and ambient temperature R = resistive load,L = inductive load

Fig. 7Typ. recovery time t rr

versus -di F /dt

3 - 3

423

IXYS reserves the right to change limits, test conditions and dimensions.

Z thJK

s t

10-3

10-210-1100101

102

0.00

0.05

0.10

0.15

0.200.25K/W Z thJC

P tot

0500

1000

1500

2000

250030000.00

0.05

0.10

0.150.20W K/W Fig. 10Transient thermal impedance junction to heatsink (per diode)

R thJC for various conduction angles d:d R thJC (K/W)DC 0.120180°C 0.128120°C 0.13560°C 0.15330°C

0.185

Constants for Z thJC calculation:i R thi (K/W)t i (s)10.00580.0005420.0310.09830.0720.544

0.0112

R thJK for various conduction angles d:d R thJK (K/W)DC 0.160180°C 0.168120°C 0.17560°C 0.19330°C

0.225

Constants for Z thJK calculation:

i R thi (K/W)t i (s)10.00580.0005420.0310.09830.0720.5440.0112125

0.04