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FEP16DT-G中文资料

FEP16AT-G-FEP16JT -G

TECHNICAL DATA

DATA SHEET 4842,REV.-

FEP16AT-G-FEP16JT-G

ULTRAFAST PLASTIC RECTIFIER

Mechanical Data

? Case: JEDEC TO-220AB molded plastic body over passivated chips ? Terminals: Plated leads solderable per MIL-STD-750, Method 2026 ? Polarity: As marked ? Mounting Position: Any

? Mounting Torque: 5 in. - lbs. max.

? Weight: 0.08 ounce, 2.24 grams Features:

Low forward voltage drop ? High surge current capacity ? High current capability ? High reliability

? Superfast recovery times for high efficiency ?

Dual rectifier construction, positive centertap

Mechanical Dimensions: In Inches / mm

TO-220AB

SENSITRON

SEMICONDUCTOR

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FEP16AT-G-FEP16JT -G

Maximum Ratings and Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise noted.

FEP

Parameter Symbol 16AT-G 16BT-G 16CT-G 16DT-G 16FT-G 16GT-G 16HT-G 16JT-G Unit Maximum repetitive peak reverse voltage V RRM 50100150200300400500600V Maximum RMS voltage V RMS 3570105140210280350420V Maximum DC blocking voltage

V DC 50

100

150

200

300

400

500

600

V Maximum average forward rectified current I F(AV)16A at TC = 100°C

Peak forward surge current

8.3 ms single halfsine wave superimposed I FSM 200A on rated load (JEDEC method)Typical thermal reisistance (NOTE 3)R ΘJA 15.0°C/W

R ΘJC 2.2Operating junction

T J ,T STG

-55 to +150

°C/W

and storage temperature range

Electrical Characteristics

FEP

per leg at 8.0 A Maximum DC reverse current at

T C = 25°C

I R 10μA

rated DC blocking voltage per leg

T C =100°C

500

Maximum reverse recovery time per leg (NOTE 1)t rr 35

ns Typical junction capacitance per leg (NOTE 2)

C J

85.0

NOTES:

(1) Reverse recovery test conditions: I F = 0.5 A, I R = 1.0 A, Irr = 0.25 A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V

(3) Thermal resistance from junction to ambient and from junction to case per leg mounted on heatsink

SENSITRON

SEMICONDUCTOR

Data Sheet 4842, Rev. -

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Maximum instantaneous forward voltage

V F 0.95

1.3 1.5V Parameter Symbol 16AT-G 16BT-G 16CT-G

16DT-G 16FT-G 16GT-G 16HT-G 16JT-G Unit

50?

NONINDUCTIVE

50?

Reverse Recovery Time Characterstic and Test Circuit Diagram

5075100125150

175

48121620Ambient Temperature [oC]

A v e r a g e R e

c t i f i e

d F o r w a r d C u r r

e n t , I F [A ]Reverse Characteristics

0 20 40 60 80 100 120 140

0.1

100

1000

Percent of Rated Peak Reverse Voltage [%]

e v e r s e C u r r e n t , I R [m A ]

51020

50100

4080120160200Number of Cycles at 60Hz

P e a k F o r w a r d S u r g e C u r r e n t , I F S M [A ]0.40.60.81 1.2 1.4 1.6 1.8

0.01

0.1

100

Forward Voltage, V F [V]

F o r w a r d C u

r r e n t , I F [A ]

5102050100

5060

708090100Reverse Voltage, V R

[V]

T o t a l C a p a c i t a n c e , C T [p F ]

Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current

Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage

SENSITRON

SEMICONDUCTOR

FEP16AT-G-FEP16JT -G

Data Sheet 4842, Rev. -

Green Products

SENSITRON FEP16AT-G-FEP16JT-G