APM2506N
Features
z
25V/60A,
R DS(ON)= 5m ? (typ.) @ V GS = 10V R DS(ON)= 7m ? (typ.) @ V GS = 4.5V z Super High Dense Cell Design z Avalanche Rated z
Reliable and Rugged
Pin Description
Applications
z
Power Management in Desktop Computer or DC/DC Converters
Ordering and Marking Information
1
2
APM2506N
Absolute Maximum Ratings
Symbol
Parameter Rating Unit
Common Ratings (T A = 25°C)
V DSS Drain-Source Voltage ±25 V GSS Gate-Source Voltage
±20 V T J Maximum Junction Temperature 150 °C T STG
Storage Temperature Range
-55 to 150
°C
Mounted on Large Heat Sink
T C =25°C 150
I DP 300μs Pulse Drain Current Tested T C =100°C 80 A
T C =25°C 60* I D Continuous Drain Current T C =100°C 40 A T C =25°C 50 P D Maximum Power Dissipation
T C =100°C
20 W R θJC
Thermal Resistance-Junction to Case
2.5
°C/W
Mounted on PCB of 1in 2 pad area
T A =25°C 150
I DP 300μs Pulse Drain Current Tested T A =100°C 80 A
T A =25°C 17
I D Continuous Drain Current T A =100°C 10 A
T A =25°C 2.5 P D Maximum Power Dissipation
T A =100°C
1 W R θJA
Thermal Resistance-Junction to Ambient
50
°C/W
Mounted on PCB of Minimum Footprint
T A =25°C 150
I DP 300μs Pulse Drain Current Tested T A =100°C 80 A
T A =25°C 13
I D Continuous Drain Current T A =100°C 7 A
T A =25°C 1.5 °C/W P D Maximum Power Dissipation
T A =100°C
0.5 °C/W R θJA
Thermal Resistance-Junction to Ambient
75
°C/W
Notes ：
* Current limited by bond wire
Electrical Characteristics (T A =25°C)
APM2506NU
Symbol Parameter Test Condition Min.Typ. Max.
Unit
Drain-Source Avalanche Ratings
E AS Drain-Source Avalanche Energy
I D =45A, V DD =15V 100 mJ
Static
BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250μA
25 V I DSS Zero Gate Voltage Drain Current V DS =20V, V GS =0V 1 μA V GS(th) Gate Threshold Voltage
V DS =V GS , I DS =250μA
1 1.5
2 V
I GSS
Gate Leakage Current
V GS =±20V, V DS =0V ±100 nA V GS =10V, I DS =40A 5 6
R DS(ON) a Drain-Source On-state Resistance V GS =4.5V, I DS =20A 7 10 m ?
Diode
V SD a
Diode Forward Voltage
I SD =20A , V GS =0V 0.7 1.3 V
I S
Diode continuous forward current T A =25°C 40 A
Dynamic b
C iss Input Capacitance 3000 pF C oss Output Capacitance 670 pF
C rss
Reverse Transfer Capacitance
V GS =0V
V DS =15V
Frequency=1.0MHz 360 pF
t d(ON) Turn-on Delay Time 13 20 ns T r Turn-on Rise Time 9 15 ns t d(OFF) Turn-off Delay Time
43 66 ns T f
Turn-off Fall Time
V DD =15V, R L =15? I DS =1A, V GEN =10V, R G =6?
14 28 ns Gate Charge b Q g Total Gate Charge
32
42
nC
Q gs Gate-Source Charge 6.6 nC Q gd Gate-Drain Charge
V DS =15V, V GS =4.5V,
I DS =20A
12.4 nC
Notes ：
a : Pulse test ; pulse width ≤300μs, duty cycle ≤2%
b : Guaranteed by design, not subject to production testing
Typical Characteristics
Square Wave Pulse Duration (sec)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t
Thermal Transient Impedance 1E-4
1E-30.010.1110100
1E-3
0.01
0.1
1
Typical Characteristics
Typical Characteristics
V SD - Source-Drain Voltage (V)
C - C a p a c i t a n c e (n C )
Capacitance V DS - Drain-Source Voltage (V) Gate Charge
Q G - Gate Charge (nC)
V G S - G a t e -S o u r c e V o l t a g e (V )
I S - S o u r c e C u r r e n t (A )
Source-Drain Diode Forward 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
012345678910
1000
2000
3000
4000
5000
6000
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Package information
Millimeters Inches Dim
Min. Max. Min. Max.
A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 E 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 H
9.398 10.41 0.370 0.410
L 0.51 0.020 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Pre-heat temperature
183 C
Peak temperature
Time
°t e m p e r a t u r e
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate (183°C to Peak) 3°C/ second max. 10°C /second max.
Preheat temperature (125 ± 25°C) 120 seconds max. Temperature maintained above 183°C 60~150 seconds
Time within 5°C of actual peak temperature 10~20 seconds
60 seconds
Peak temperature range 220 + 5/-0°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C Ramp-down rate
6°C /second max. 10°C /second max. Time 25°C to peak temperature
6 minutes max.
Reliability test program
Test item
Method
Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST
MIL-STD 883D-1011.9
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
Application
A B C J T1 T2 W P E
330±3 100±2 13±0.5
2±0.5
16.4+0.3
-0.2 2.5±0.5
16+0.316-0.18±0.1 1.75±0.1
F D D1 Po P1 Ao Bo Ko t TO-252
7.5±0.1 1.5±0.1 1.5±0.25
4.0±0.1
2.0±0.1
6.8±0.1
10.4±0.1
2.5±0.1 0.3±0.05
(mm)
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
TO-252 16 13.3 2500 Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
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