PHD95N03LT中文资料

PHD95N03LT

N-channel enhancement mode ?eld-effect transistor

Rev. 01 — 18 July 2001

Product data

c

c

M3D300

1.Description

N-channel logic level ?eld-effect power transistor in a plastic package using TrenchMOS?1 technology.Product availability:

PHD95N03LT in SOT428 (D-PAK).

2.Features

s Low on-state resistance s Fast switching.

3.Applications

s High frequency computer motherboard DC to DC converters

4.Pinning information

[1]

It is not possible to make connection to pin 2 of the SOT428 package.

1.TrenchMOS is a trademark of Royal Philips Electronics.

Table 1:Pinning - SOT428, simpli?ed outline and symbol

Pin Description Simpli?ed outline

Symbol

1gate (g)SOT428 (D-Pak)

2drain (d)[1]

3source (s)

mb

mounting base,

connected to drain (d)

MBK091

Top view

13

mb

2

s

d

g

MBB076

5.Quick reference data

6.Limiting values

Table 2:Quick reference data

Symbol Parameter

Conditions Typ Max Unit V DS drain-source voltage (DC)T j =25to 175°C ?25V I D drain current (DC)T mb =25°C; V GS =5V ?75A P tot total power dissipation T mb =25°C

?115W T j junction temperature

?175°C R DSon

drain-source on-state resistance

V GS =10V; I D =25A 57m ?V GS =5V; I D =25A

7.5

9

m ?

Table 3:Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)T j =25to 175°C

?25V V DGR drain-gate voltage (DC)T j =25to 175°C; R GS =20k ?

?25V V GS gate-source voltage (DC)?±15V V GSM gate-source voltage t p ≤50μs;pulsed;

duty cycle 25%;T j ≤150°C

?±20V I D drain current (DC)T mb =25°C; V GS =5V;Figure 2 and 3?75A T mb =100°C; V GS =5V;Figure 2?61A I DM peak drain current T mb =25°C; pulsed; t p ≤10μs;Figure 3?240A P tot total power dissipation T mb =25°C;Figure 1?115W T stg storage temperature

?55+175°C T j operating junction temperature

?55+175°C Source-drain diode

I S source (diode forward) current (DC)T mb =25°C

?75A I SM peak source (diode forward) current T mb =25°C; pulsed; t p ≤10μs ?240A Avalanche ruggedness

E AS

non-repetitive avalanche energy

unclamped inductive load;

I D =75A;t p =0.1ms; V DD =15V;

R GS =50?; V GS =5V; starting T j =25°C;?

120

mJ

I AS

non-repetitive avalanche current unclamped inductive load;

V DD =15V;R GS =50?; V GS =5V;starting T j =25°C

?75A

Fig 1.Normalized total power dissipation as a

function of mounting base temperature.Fig 2.Normalized continuous drain current as a

function of mounting base temperature.

T mb =25°C; I DM is single pulse.

Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa16

020

40

6080

100

1200

50

100

150200

(%)

P der T mb (o C)

03ae86

020

40

60

80

100

1200

50

100

150200

T mb (oC)

I der (%)P der P tot

P tot 25C °

()

----------------------100%

×=I der I D

I D 25C °

()

------------------100%

×=03ae87

1

10

102

103

1

10

102

V DS (V)

I D (A)

D.C.

100 ms

10 ms R DSon = V DS / I D

1 ms

tp = 10 μs 100 μs

t p

t p T

P

t

T

δ =

7.Thermal characteristics

7.1Transient thermal impedance

Table 4:Thermal characteristics

Symbol Parameter

Conditions Value Unit R th(j-mb)thermal resistance from junction to mounting base

Figure 4

1.3K/W R th(j-a)

thermal resistance from junction to ambient

mounted on a printed circuit board;minimum footprint

50

K/W

Fig 4.Transient thermal impedance from junction to mounting base as a function of pulse duration.

03ae85

10-3

10-2

10-1

1

10 10-5

10

10-3

10-2

10-1

1

10

t p (s)

Z th(j-mb)(K/W)

single pulse

δ = 0.50.2

0.10.050.02

t p

t p T

P

t

T

δ =

8.Characteristics

Table 5:Characteristics

T j=25°C unless otherwise speci?ed

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source breakdown voltage I D=0.25 mA; V GS=0V

T j=25°C25??V

T j=?55°C22??V

V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;Figure9

T j=25°C1 1.52V

T j=175°C0.5??V

T j=?55°C?? 2.3V

I DSS drain-source leakage current V DS=25V; V GS=0V

T j=25°C?0.0510μA

T j=175°C??500μA I GSS gate-source leakage current V GS=±5V; V DS=0V?10100nA R DSon drain-source on-state resistance V GS=5V; I D=25A;Figure7 and8

T j=25°C?7.59m?

T j=175°C?1315.5m?

V GS=10V; I D=25A;Figure7 and8

T j=25°C?57m?Dynamic characteristics

g fs forward transconductance V DS=25V; I D=50A?50?S

Q g(tot)total gate charge I D=50A; V DD=12V; V GS=4.5V;

Figure13?43?nC

Q gs gate-source charge?12?nC Q gd gate-drain (Miller) charge?16?nC C iss input capacitance V GS=0V; V DS=25V; f=1MHz;Figure11?2200?pF C oss output capacitance?770?pF C rss reverse transfer capacitance?500?pF

t d(on)turn-on delay time V DD=15V; I D=15A; V GS=10V;

R G=6?; resistive load ?1020ns

t r turn-on rise time?3050ns t d(off)turn-off delay time?110140ns t f turn-off fall time?80100ns Source-drain diode

V SD source-drain (diode forward) voltage I S=25A; V GS=0V;Figure12?0.85 1.2V

I S=40A;V GS=0V;Figure12?0.9?V

T j =25°C T j =25°C and 175°C; V DS ≥I D x R DSON

Fig 5.Output characteristics: drain current as a

function of drain-source voltage;typical values.Fig 6.Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

T j =25°C

Fig 7.Drain-source on-state resistance as a function

of drain current; typical values.Fig 8.Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ad78

015

30

45

60

750

0.4

0.8

1.2

1.6

2

V DS (V)

I D (A) 3 V

5 V T j = 25 oC

V GS = 2.5 V

10 V 3.5 V

03ad80

015

30

45

60

750

1

2

3

4

V GS (V)

I D (A)V DS > I D x R DSon

T j = 25 oC

175 oC

03ad79

0.01

0.02

0.03

0.04

0.05

0.060

15

30

45

60

75

I D (A)

R DSon (?) 2.5 V

V GS = 3 V

T j = 25 oC

5V 10 V

3.5 V

03ad57

0.4

0.8

1.2

1.6

2-60

60

120

180

T j (oC)

a a R DSon

R DSon 25C °()

---------------------------=

I D =1mA; V DS =V GS T j =25°C; V DS =5V

Fig 9.Gate-source threshold voltage as a function of

junction temperature.Fig 10.Sub-threshold drain current as a function of

gate-source voltage.

V GS =0V;f =1MHz

Fig 11.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa33

00.5

1

1.5

2

2.5-60

60

120

180T j (o

C)

V GS(th)(V)

max

typ

min

03aa36

10-6

10-5

10-4

10-3

10-2

10-100.51 1.52

2.53V GS (V)

I D (A)max

typ min 03ad83

102

103

104 10-1

1

10

102

V DS (V)

C iss C oss C rss (pF)C iss

C oss C rss

T j =25°C and 175°C; V GS =0V I D =50A; V DD =24V , 12 V and 6 V

Fig 12.Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical values.

Fig 13.Gate-source voltage as a function of gate

charge; typical values.

03ad82

01530

45

60

750

0.3

0.6

0.9

1.2

V SD (V)

I S (A)T j = 25 oC

175 oC

V GS = 0 V

03ad84

02

4

6

8

100

30

60

90

Q G (nC)

V GS (V)I D = 50 A

T j = 25 oC V DD = 6 V 12 V 24 V

9.Package outline

Fig 14.SOT428 (D-PAK).

REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC EIAJ SOT428

TO-252

SC-63

98-04-0799-09-13

01020 mm

scale

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped)

SOT428

E b 2

D 1

w A

M b

c

b 1

L 1

L

1

3

2

D

E 1

H E

L 2

Note

1. Measured from heatsink back to lead.

e 1

e

A

A 2

A

A 1y seating plane

mounting base

A 1(1)D

max.b D 1max.E max.H E max.w y max.A 2b 2b 1max.c E 1min.e

e 1

L 1min.L 2L A

max.UNIT DIMENSIONS (mm are the original dimensions)0.2

0.2

mm

2.382.22

0.650.45

0.890.71

0.890.71

1.10.9

5.365.26

0.40.2

6.225.98

4.814.45

2.285 4.57

10.49.6

0.5

0.70.5

6.736.47

4.0

2.952.55

10.Revision history

Table 6:Revision history

Rev Date CPCN Description

0120010718-Product data; initial version

11.Data sheet status

[1]Please consult the most recently issued data sheet before initiating or completing a design.

[2]The product status of the device(s)described in this data sheet may have changed since this data sheet was published.The latest information is available on the Internet at

URL https://www.wendangku.net/doc/7115771221.html,.

12.De?nitions

Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title.For detailed information see the relevant data sheet or data handbook.

Limiting values de?nition —Limiting values given are in accordance with the Absolute Maximum Rating System(IEC60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied.Exposure to limiting values for extended periods may affect device reliability.

Application information —Applications that are described herein for any of these products are for illustrative purposes only.Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.13.Disclaimers

Life support —These products are not designed for use in life support appliances,devices,or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes —Philips Semiconductors reserves the right to make changes,without notice,in the products,including circuits,standard cells,and/or software,described or contained herein in order to improve design and/or performance.Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent,copyright,or mask work right to these products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.

Data sheet status[1]Product status[2]De?nition

Objective data Development This data sheet contains data from the objective speci?cation for product development.Philips Semiconductors

reserves the right to change the speci?cation in any manner without notice.

Preliminary data Quali?cation This data sheet contains data from the preliminary speci?cation. Supplementary data will be published at a

later date. Philips Semiconductors reserves the right to change the speci?cation without notice, in order to

improve the design and supply the best possible product.

Product data Production This data sheet contains data from the product speci?cation. Philips Semiconductors reserves the right to

make changes at any time in order to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change Noti?cation (CPCN) procedure

SNW-SQ-650A.

Philips Semiconductors - a worldwide company

Argentina: see South America

Australia: Tel.+61297048141,Fax.+61297048139 Austria: Tel. +43160101, Fax.+431601011210

Belarus: Tel. +37517 220 0733, Fax.+37517 220 0773 Belgium: see The Netherlands

Brazil:see South America

Bulgaria: Tel. +359268 9211, Fax.+359268 9102

Canada: Tel. +18002347381

China/Hong Kong: Tel. +852 2 3197888, Fax.+8522 3197700 Colombia: see South America

Czech Republic: see Austria

Denmark: Tel. +453 2882636, Fax.+453 1570044

Finland: Tel. +3589615800, Fax.+358961580920

France: Tel. +33147286600, Fax.+33147286638 Germany: Tel. +4940235360, Fax.+49402353 6300 Hungary: Tel.+3613821700, Fax.+3613821800

India: Tel. +91224938541, Fax.+91224938722

Indonesia: see Singapore

Ireland: Tel. +35317640000, Fax.+35317640200

Israel: Tel. +97236450444, Fax.+97236491007

Italy: Tel. +390392036838,Fax +390392036800

Japan: Tel. +81337405130, Fax.+81337405057

Korea: Tel. +8227091412, Fax.+8227091415

Malaysia: Tel. +60 37505214, Fax.+6037574880

Mexico: Tel. +9-58002347381

Middle East: see Italy Netherlands: Tel. +31402782785, Fax.+31402788399

New Zealand: Tel. +6498494160, Fax.+6498497811 Norway: Tel. +4722748000, Fax.+4722748341 Philippines: Tel. +6328166380, Fax.+6328173474 Poland: Tel. +48225710000, Fax.+48225710001 Portugal: see Spain

Romania: see Italy

Russia: Tel. +70957556918, Fax.+70957556919 Singapore: Tel. +653502538, Fax.+652516500

Slovakia: see Austria

Slovenia: see Italy

South Africa: Tel. +27114715401, Fax.+27114715398 South America: Tel. +55118212333, Fax.+55118291849 Spain: Tel. +3433016312, Fax.+3433014107

Sweden: Tel. +4686322000, Fax.+4686322745 Switzerland: Tel. +4114882686, Fax.+4114817730 Taiwan: Tel. +886221342451, Fax.+886221342874 Thailand: Tel. +6623617910, Fax.+6623983447

Turkey: Tel. +902165221500, Fax.+902165221813 Ukraine: Tel. +380442642776, Fax.+380442680461

United Kingdom: Tel. +442087305000, Fax.+442087548421 United States: Tel. +18002347381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: Tel. +381113341299, Fax.+381113342553

For all other countries apply to: Philips Semiconductors, Marketing Communications,

Building BE, P.O.Box218, 5600MD EINDHOVEN,

The Netherlands,Fax.+31402724825Internet:https://www.wendangku.net/doc/7115771221.html, (SCA72)

? Philips Electronics N.V. 2001.Printed in The Netherlands

All rights are reserved.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice.No liability will be accepted by the publisher for any consequence of its use.Publication Contents

1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Pinning information . . . . . . . . . . . . . . . . . . . . . . 15Quick reference data . . . . . . . . . . . . . . . . . . . . . 26Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 27Thermal characteristics . . . . . . . . . . . . . . . . . . . 47.1Transient thermal impedance. . . . . . . . . . . . . . 48Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 59Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Revision history . . . . . . . . . . . . . . . . . . . . . . . . 1011Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 1112Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1113

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11