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STGB10NB40LZ中文资料

1/10August 2003STGB10NB40LZ

N-CHANNEL CLAMPED 20A -D²PAK

INTERNALLY CLAMPED PowerMESH™IGBT

s POLYSILICON GATE VOLTAGE DRIVEN s

LOW THRESHOLD VOLTAGE s

LOW ON-VOLTAGE DROP s

LOW GATE CHARGE s

HIGH CURRENT CAPABILITY s HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout,STMicroelectronics has

designed an advanced family of IGBTs,the

PowerMESH ™IGBTs,with outstanding

performances.The built in collector-gate zener

exhibits a very precise

STGB10NB40LZ中文资料

active clamping while the

gate-emitter zener supplies an ESD protection.APPLICATIONS

s AUTOMOTIVE IGNITION

ORDERING INFORMATION

TYPE

V CES V CE(sat)I C STGB10NB40LZ

CLAMPED <1.8 V 20A SALES TYPE

MARKING PACKAGE PACKAGING STGB10NB40LZT4GB10NB40LZ D

STGB10NB40LZ中文资料

2PAK TAPE &REEL

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