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STGB10NB40LZ中文资料

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STGB10NB40LZ

N-CHANNEL CLAMPED 20A -D²PAK

INTERNALLY CLAMPED PowerMESH™IGBT

TYPE

STGB10NB40LZ

s s

s

s

s

s V CES CLAMPED V CE(sat)<1.8 V I C 20A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH ™IGBTs, with outstanding

performances. The built in collector-gate zener

exhibits a very precise active

STGB10NB40LZ中文资料

clamping while the

gate-emitter zener supplies an ESD protection. APPLICATIONS

s AUTOMOTIVE IGNITION

ORDERING INFORMATION

SALES TYPE

STGB10NB40LZT4MARKING GB10NB40LZ PACKAGE D 2

STGB10NB40LZ中文资料

PAK PACKAGING TAPE &REEL

August 20031/10

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