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2PA1015Y中文资料

DATA SHEET

Product speci?cation

Supersedes data of 1997 May 01

1999Apr 08

DISCRETE SEMICONDUCTORS

2PA1015

PNP general purpose transistor

book, halfpage

M3D186

PNP general purpose transistor

2PA1015

FEATURES

?Low current (max. 150mA)?Low voltage (max. 50V).APPLICATIONS

?General purpose switching and amplification.DESCRIPTION

PNP transistor in a plastic TO-92; SOT54 package.NPN complement: 2PC1815.

PINNING

PIN DESCRIPTION

1base 2collector 3

emitter

Fig.1

Simplified outline (TO-92; SOT54)and symbol.

handbook, halfpage

13

2MAM285

21

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).Note

1.Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.UNIT

V CBO collector-base voltage open emitter ??50V V CEO collector-emitter voltage open base ??50V V EBO emitter-base voltage open collector

??5V I C collector current (DC)??150mA I CM peak collector current ??200mA I BM peak base current ??200mA P tot total power dissipation T amb ≤25°C; note 1

?500mW T stg storage temperature ?65+150°C T j junction temperature

?150°C T amb operating ambient temperature

?65+150

°C

PNP general purpose transistor

2PA1015

THERMAL CHARACTERISTICS Note

1.Transistor mounted on an FR4 printed-circuit board.CHARACTERISTICS

T j =25°C unless otherwise speci?ed.SYMBOL PARAMETER

CONDITIONS

VALUE UNIT R th j-a thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL PARAMETER

CONDITIONS

MIN.TYP .MAX.UNIT I CBO collector cut-off current I E =0; V CB =?50V ???100nA I EBO emitter cut-off current I C =0; V EB =?5V ?

?

?100nA

h FE

DC current gain I C =?2mA; V CE =?6V

2PA1015Y 120?2402PA1015GR

200?400h FE DC current gain

I C =?150mA; V CE =?6V 25??V CEsat collector-emitter saturation voltage I C =?100mA; I B =?10mA

???300mV V BEsat base-emitter saturation voltage I C =?100mA; I B =?10mA ???1.1V C c collector capacitance I E =i e =0; V CB =?10V; f =1MHz ?47pF f T transition frequency I C =?1mA; V CB =?10V; f =100MHz 80

??MHz F

noise ?gure

I C =?200μA; V CE =?5V; R S =2k ?;f =1kHz; B =200Hz

?

?

10

dB

PNP general purpose transistor

2PA1015

PACKAGE OUTLINE

UNIT A REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC EIAJ mm

5.25.0

b 0.480.40

c 0.450.40

D 4.84.4

d 1.71.4

E 4.23.6

L 14.512.7

e 2.54

e 11.27

L 1(1)2.5

b 10.660.56

DIMENSIONS (mm are the original dimensions)Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54

TO-92

SC-43

97-02-28

A

L

0 2.5 5 mm

scale

b

c

D

b 1

L 1

d

E Plastic single-ended leaded (through hole) package; 3 leads

SOT54

e 1

e

1

2

3

PNP general purpose transistor2PA1015

DEFINITIONS

Data sheet status

Objective speci?cation This data sheet contains target or goal speci?cations for product development. Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later. Product speci?cation This data sheet contains ?nal product speci?cations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speci?cation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PNP general purpose transistor2PA1015

NOTES

PNP general purpose transistor2PA1015

NOTES

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? Philips Electronics N.V. 1999

SCA63

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Printed in The Netherlands

115002/00/03/pp8 Date of release: 1999Apr 08Document order number: 939775005433

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