GSC4409中文资料
ISSUED DATE :2006/10/19 REVISED DATE :
G S C 4409
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC4409 uses advanced trench technology to provide excellent on-resistance and ultra low gate charge. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement *Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
Millimeter Millimeter REF . Min. Max.
REF . Min. Max.
A 5.80 6.20 M 0.10 0.25
B 4.80 5.00 H 0.35 0.49
C 3.80 4.00 L 1.35 1.75
D 0° 8° J 0.375 REF.
E 0.40 0.90 K 45° F
0.19
0.25
G
1.27 TYP .
Absolute Maximum Ratings
Parameter
Symbol Ratings Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 3
I D @T A =25 -15 A Continuous Drain Current 3 I D @T A =70
-12.8 A Pulsed Drain Current 1 I DM -80 A Total Power Dissipation P D @T A =25
2.5 W Linear Derating Factor
0.02 W/ Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol Value Unit Thermal Resistance Junction-ambient 3 Max.
Rthj-amb
50
/ W
BV DSS -30V R DS(ON) 7.5m I D -15A
Pb Free Plating Product
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D =-250uA Gate Threshold Voltage V GS(th) -1.4 - -2.7 V V DS =V GS , I D =-250uA Forward Transconductance g fs - 50 - S V DS =-5V, I D =-15A Gate-Source Leakage Current
I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current(Tj=25) - - -5 uA V DS =-30V, V GS =0 Drain-Source Leakage Current(Tj=55)
I DSS
- - -25 uA V DS =-24V, V GS =0 - - 7.5 V GS =-10V, I D =-15A Static Drain-Source On-Resistance 2
R DS(ON) - - 12 m
V GS =-4.5V, I D =-10A
Total Gate Charge 2 Q g - 100 120 Gate-Source Charge Q gs - 14.5 - Gate-Drain (“Miller”) Change Q gd - 23 - nC I D =-15A V DS =-15V
V GS =-10V Turn-on Delay Time 2
T d(on) - 14 - Rise Time
T r - 16.5 - Turn-off Delay Time T d(off) - 76.5 - Fall Time T f - 37.5 - ns V DS =-15V V GS
=-10V R G =3 R L =1 Input Capacitance C iss - 5270 6400 Output Capacitance
C oss - 945 - Reverse Transfer Capacitance
C rss
-
745
-
pF V GS =0V V DS =-15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol Min. Typ. Max. Unit Test Conditions
Forward On Voltage 2
V SD - - -1.0 V I S =-1.0A, V GS =0V Continuous Source Current (Body Diode )
I S - - -5 A V D = V G =0V, V S =-1.0V Reverse Recovery Time 2
T rr - 36.7 - ns Reverse Recovery Charge
Q rr
-
28
-
nC I S =-15A, V GS
=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in 2 copper pad of FR4 board; 125/W when mounted on Min. copper pad.
Characteristics Curve
0.00001
0.0001 0.001 0.01 0.1 100 10 1 Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Maximum
Power Dissipation
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Normalized Maximum Transient Thermal Impedance
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000