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EE-SY110中文资料

EE-SY110/113/171 Compact Reflective Phototransistor Output

Low-profiled model with an overall height of only3mm(EE-SY171)

Models with a circuit integrated into molded housing provide special cost

advantages(EE-SY110/113)

Model with a filter reduces effects of external visible light(EE-SY113)

Ordering Information

Appearance Sensing method Sensing

distance Sensing object Output

configuration

Weight Part number

4.4mm of90%

Approx.0.5g EE-SY113

5mm Approx.0.4g EE-SY110

Specifications

ABSOLUTE MAXIMUM RATINGS(T A=25°C)

Item Symbol Rated value

Input Forward current I F50mA*

Pulse forward current I FP1A**

Reverse voltage V R4V

Output Collector-emitter voltage V CEO30V

Collector current I C20mA

Collector dissipation P C100mW*

Ambient temperature Operating Topr-40°C to85°C(-40°F to185°F)

Storage Tstg-40°C to85°C(-40°F to185°F) *Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.

**This value was measured with a pulse width of10μs and a repeating frequency of100Hz.

EE-SY110/113/171

CHARACTERISTICS (T A =25°C)

Item Symbol EE-SY110EE-SY171EE-SY113Value Condition Value Condition Value Condition Emitter

Forward voltage V F 1.5V max.I F =30mA 1.5V max.I F =30mA 1.5V max.I F =30mA Reverse current I R 10μA max.V R =4V 10μA max.V R =4V 10μA max.V R =4V Peak emission wavelength

λp(L)940nm typ.I F =20mA 940nm typ.I F =20mA 940nm typ.I F =20mA Receiver

Dark current I D 200nA max.V CE =10V 0l x 200nA max.V CE =10V 0l x 200nA max.V CE =10V 0l x Peak spectral sensitivity wavelength

λp(P)850nm typ.V CE =10V 850nm typ.

V CE =10V 850nm typ.

V CE =10V Combination

Light current

I L

200to 2,000μA

I F =20mA V CE =10V White paper with a reflection factor of 90%at a distance of 5mm 50to 500μA

I F =20mA V CE =10V White paper with a reflection factor of 90%at a distance of 3.5mm 160to 1,600μA

I F =20mA V CE =10V White paper with a reflection factor of 90%at a distance of 4.4mm Leakage current I LEAK 2μA max.I F =20mA V CE =10V*200nA max.I F =20mA V CE =10V*2μA max.I F =20mA V CE =10V*Rising time**tr 30μs typ.V CC =5V k ?30μs typ.V CC =5V k ?30μs typ.V CC =5V k ?Falling time**

30μs typ.

R L =1I L =1mA

30μs typ.

R L =1I L =1mA

30μs typ.

R L =1I L =1mA

*The sensing object reflects no light.

**The following illustrations show the rising time,tr,and the falling time,tf.

Input

V CC

Output

R L

Input

Output t

90%10%tf

Sensing object

Engineering Data

Note:The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.

TEMPERATURE CHARACTERISTICS

INPUT CHARACTERISTICS (TYPICAL)

Ambient temperature T A (°C)

F F o r w a r d c u r r e n t I (m A )

I F ,P c

Forward voltage V F (V)

F F o r w a r d c u r r e n t I (m A )

T A =--30°C T A =+25°C T A =+70°C

C o l l e c t o r d i s s i p a t i o n P C (m W )

EE-SY110/113/171

INPUT/OUTPUT CHARACTERISTICS (TYPICAL)

EE-SY110

Forward current I F (mA)

L i g h t c u r r e n t I (A )

L μEE-SY171

L i g h t c u r r e n t I (A )

L μForward current I F (mA)

T A =25°C V CE =10V

Sensing object:Paper with a reflection factor of 90%Sensing distance:5mm

Sensing object:White paper with a reflection factor of 90%Sensing distance:5mm

V CE =10V

OUTPUT CHARACTERISTICS (TYPICAL)

EE-SY110

EE-SY171

L i g h t c u r r e n t I (m A )

L Collector-emitter voltage V CE (V)

I F =30mA

I F =20mA I F =10mA

White paper (reflection factor:90%)

Sensing distance:5mm

I F =40mA

Collector-emitter voltage V CE (V)

L i g h t c u r r e n t I (A )

L μI F =40mA

I F =30mA

I F =20mA

I F =10mA

Sensing object:Paper with a reflection factor of 90%Sensing distance:3.5mm

T A =25°C

LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL)

EE-SY110/113

EE-SY171

R e l a t i v e l i g h t c u r r e n t I (%)

L Ambient temperature T A (°C)

Based on the I L value at 25°C as 100%.

Sensing object:White paper with a reflection factor of 90%

R e l a t i v e l i g h t c u r r e n t I (%)

L Ambient temperature T A (°C)

Sensing object:Paper with a reflection factor of 90%

I F =20mA V CE =10V

Sending distance:3.5mm

I F =20mA V CE =10V

Sending distance:5mm

EE-SY110/113/171

LEAKAGE CURRENT

CHARACTERISTICS (TYPICAL)

EE-SY171

C u r r e n t l e a k a g e I (n A )

L E A K Forward current I F (mA)

Sensing object:Object with no light reflection

Sensing distance:Infinite

T A =25°C V CE =10V

SENSING DISTANCE

CHARACTERISTICS 2(TYPICAL)

EE-SY171

L i g h t c u r r e n t I (A )

L μDistance d (mm)(a)(b)(c)(d)(e)

(f)

T A =25°C I F =20mA V CE =10V

a:Aluminum

b:White paper with a reflection factor of 90%

c:Pink paper d:OHP

e:Tracing paper f:Black sponge

EE-SY110

R e l a t i v e l i g h t c u r r e n t I (%)

L Distance d 2(mm)T A =25°C I F =20mA V CE =10V Moving direction

d 1=3mm

d 1=5mm

d 1

d 2

SENSING DISTANCE

CHARACTERISTICS 1(TYPICAL)

EE-SY110

Distance d (mm)

L i g h t c u r r e n t I (A )

L μ(b)(c)

(d)

(a)(a):15x 15mm 2(b):10x 10mm 2(c):5x 5mm 2(d):2x 2mm 2

Sensing object:White paper with a reflection factor of 90%

T A =25°C I F =20mA V CE =10V

SENSING DISTANCE

CHARACTERISTICS (TYPICAL)

EE-SY171

Distance d (mm)

L i g h t c u r r e n t I (A )

L μT A =25°C I F =20mA V CE =10V

Paper with a reflection factor of 90%

Tracing paper OHP sheet

Black paper

EE-SY171

R e l a t i v e l i g h t c u r r e n t I (%)

L Distance d 2(mm)

T A =25°C I F =20mA V CE =10V

Sensing object:Paper with a reflection factor of 90%

d 1

d 2

d 1=3mm d 1=4mm d 1=5mm

EE-SY110/113/171

SWITCHING CHARACTERISTICS (RISE TIME,TYPICAL)

EE-SY110/113

Light current I L (μA)

R L =1k ?R L =470?R L =100?

90%10%

Input

Output

Input

I L

R L

Vcc

OUT T A =25°C V CE =10V

R L =4.7k ?

R i s i n g t i m e t r (s )

μEE-SY171

R i s i n g t i m e t r (s )

Light current I L (μA)

R L =4.7k ?

R L =1k ?

R L =470?

R L =100?

T A =25°C V CE =10V

Sensing distance:3.5mm

Sensing object:Paper with a reflection factor of 90%μ SWITCHING CHARACTERISTICS (FALL TIME,TYPICAL)

EE-SY110/113

F a l l i n g t i m e t f (s )

μLight current I L (μA)d

90%

10%

R L =4.7k ?

R L =1k ?

R L =470?R L =100?

Input

Output Input

I L

Vcc

OUT T A =25°C V CE =10V

EE-SY171

Light current I L (μA)

F a l l i n g t i m e t f (s )

R L =4.7k ?

R L =1k ?

R L =470?

R L =100?

μSensing distance:3.5mm Sensing object:Paper with a reflection factor of 90%

T A =25°C V CE =10V

SENSING ANGLE CHARACTERISTICS (TYPICAL)

EE-SY110

R e l a t i v e l i g h t c u r r e n t I (%)

L V CE =10V I F =20mA

Sensing object:White paper with a reflection factor of 90%

0Sensing distance:5mm

Angle deviation Θ(°)+θ

?θEE-SY171

T A =25°C I F =20mA V CE =10V

Sensing object:

Paper with a reflection factor of 90%

0R e l a t i v e l i g h t c u r r e n t I (%)

L Angle deviation Θ(°)

+θ

?θSensing distance:5mm

EE-SY110/113/171

Dimensions

Unit:mm

(inch)

EE-SY171

4.2

3 2.5

5.5

Two,2dia.Two,1.2dia.

Anode mark 0°to 30°

Four,0.5

Four,0.25

Internal Circuit (All Models)

Terminal https://www.wendangku.net/doc/822079930.html, A Anode K Cathode C Collector E

Emitter

EE-SY113

0.76.2

2.562.4

15.2

15to 18

E C

Four,0.5

EE-SY110

124.6

4.5

2.50.6 2.54.81.90.60.515to 18

E K

Θ=0to 13°

15.2±0.2

8+0--0.2

Four,0.5

Four,R1.5

Four,0.25

EE-SY110/113/171

Precautions

Refer to the Technical Information Section for general

precautions.

Cat.No.EO5DAX4

1/99

Specifications subject to change without notice.

Printed in U.S.A.

OMRON ELECTRONICS,INC.

One East Commerce Drive Schaumburg,IL 60173

NOTE:DIMENSIONS SHOWN ARE IN MILLIMETERS.To convert millimeters to inches divide by 25.4.

1-800-55-OMRON

OMRON CANADA,INC.

885Milner Avenue

Scarborough,Ontario M1B 5V8

416-286-6465