SMV2019中文资料
Silicon Hyperabrupt Varactor Diode Chips
Features
I High Q for Low Loss Resonators I Low Leakage Current
I High Tuning Ratio for Wideband VCOs I SPICE Model Parameters I Small Footprint Chip Design
Description
Alpha Industries’product line of silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low R S wide tuning ratio devices with high Q values.These planar chips have a small outline size (12 x 12 mils
SMV2019 to SMV2023
Electrical Specifications at 25°C
C J @ 0 V C J @ 4 V C J @ 20 V Q @ 4 V 1 GHz I R @17.6 V Contact Part Number (pF)1(pF)
(pF)50 MHz 2R S @ 4 V (?) (nA)3Diam.(mils)4
Typ.Min.Max.Min.Max.Min.Typ.Max.Nom.SMV2019-000 2.30.680.880.130.23500 4.850 2.00SMV2020-000 3.1 1.13 1.430.230.33500 4.150 2.50SMV2021-000 4.5 1.58 1.980.320.44500 2.850 3.00SMV2022-0007.1
2.48
3.080.480.68400 2.250 3.75SMV2023-000
10.8
4.28
5.28
0.78
1.08
400
1.4
50
5.00
nominal) and are fully passivated resulting in low leakage current and high reliability.These varactor chips are intended for assembly in hybrid integrated circuit resonators used in VCOs and analog tuned filters.
1.All capacitance values specified at 1 MHz.
2.50 MHz Q calculated from 1 GHz R S and 1 MHz C J .
3.V B at 10 μA specified at 22 V Min.
4.Outline drawing 149-801.
Characteristic
Value Reverse Voltage (V R )22 V Forward Current (I F )
100 mA Power Dissipation at 25°C (P D )250 mW Operating T emperature (T OP )-55°C to +150°C Storage Temperature (T ST )
-65°C to +200°C
Absolute Maximum Ratings
ANODE METALIZED GOLD DOT CONTACT - GOLD
Outline Drawing
149-801
Silicon Hyperabrupt Varactor Diode Chips
SMV2109 to SMV2023
DIODE
Varactor_Diode AREA = 1
MODEL = Diode_Model MODE = nonlinear
S
S
DIODEM
Diode_Model I S = 1.00e-14R S = R S N = 1, 2T T = 0C JO = C JO M = M V J = V J E G = 1.11X TI = 3K F =0A F =1F C = 0.5B V = 22I BV = 1e-5I SR = 0N R = 2I KF = 0N BV = 1I BVL = 0N BVL = 1T BV1 = 0T NOM = 27F FE = 1
C a p a c i t a n c e (p F )
Reverse Voltage (V)Capacitance vs. Reverse Voltage 0
1234567891011120
5101520
S e r i e s R e s i s t a n c e (?)
Reverse Voltage (V)
Series Resistance vs. Voltage @ 1 GHz
0123456
84
121620
Typical Performance Data
SPICE Model
Part C JO V J M R S Number (pF)(V)(?)SMV2019 2.3 3.5 1.40 4.8SMV2020 3.3 3.6 1.30 4.1SMV2021 4.5 3.9 1.34 2.8SMV20227.1 4.0 1.40 2.2SMV2023
10.8
4.6
1.45
1.4
Typical Capacitance Values
SMV2019SMV2020SMV2021
SMV2022SMV2023V R (V)C J (pF)C J (pF)C J (pF)C J (pF)C J (pF)0.0 2.25 3.14 4.487.0810.760.5 1.79 2.5 3.57 5.668.761.0 1.53 2.16 3.09 4.887.672.0 1.19 1.72 2.45 3.89 6.313.00.99 1.44 2.09 3.19 5.384.00.84 1.24 1.83 2.71 4.755.00.71 1.07 1.60 2.30 4.216.00.570.90 1.37 1.87 3.667.00.460.74 1.17 1.52 3.178.00.380.610.97 1.25 2.689.00.330.520.81 1.07 2.2510.00.290.460.690.94 1.8911.00.260.420.610.85 1.6612.00.240.380.560.78 1.4913.00.230.360.510.73 1.3514.00.210.340.480.69 1.2415.00.200.320.450.65 1.1616.00.190.310.430.62 1.1017.00.190.290.410.59 1.0418.00.180.280.390.570.9919.00.170.270.380.550.9520.0
0.16
0.26
0.36
0.54
0.91
SPICE model parameters extracted from measured characteristics may not reflect exact physical or electronic properties.See application note APN1004.
C V =
+ C P
1+C J0M
V R
V J