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20-Bi2O3-MoO3 Binary System An Alternative Ultralow Sintering Temperature Microwave Dielectric

Bi 2O 3–MoO 3Binary System:An Alternative Ultralow Sintering

Temperature Microwave Dielectric

Di Zhou,w ,z ,y Hong Wang,z Li-Xia Pang,z Clive A.Randall,y and Xi Yao z

Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education,Xi’an Jiaotong University,

Xi’an 710049,China

Center for Dielectric Studies,Materials Research Institute,The Pennsylvania State University,University Park,

Pennsylvania 16802

Preparation,phase composition,microwave dielectric proper-ties,and chemical compatibility with silver and aluminum elec-trodes were investigated on a series of single-phase compounds in the Bi 2O 3–MoO 3binary system.All materials have ultralow sintering temperatures o 8201C.Eight different x Bi 2O 3–(1àx )MoO 3compounds between 0.2r x r 0.875were fabricated and the associated microwave dielectric properties were studied.The b -Bi 2Mo 2O 9single phase has a positive temperature coef?cient of resonant frequency (TCF)about 131ppm/1C,with a per-mittivity e r 538and Q f 512500GHz at 300K and at a fre-quency of 6.3GHz.The a -Bi 2Mo 3O 12and c -Bi 2MoO 6compounds both have negative temperature coef?cient values of TCF B à215and B à114ppm/1C,with permittivities of e r 519and 31,Q f 521800and 16700GHz at 300K mea-sured at resonant frequencies of 7.6and 6.4GHz,respectively.Through sintering the Bi 2O 3–2.2MoO 3at 6201C for 2h,a composite dielectric containing both a and b phase can be ob-tained with a near-zero temperature coef?cient of frequency TCF 5à13ppm/1C and a relative dielectric constant e r 535,and a large Q f B 12000GHz is also observed.Owing to the frequent dif?culty of thermochemical interactions between low sintering temperature materials and the electrode materials dur-ing the co?ring,preliminary investigations are made to deter-mine any major interactions with possible candidate electrode metals,Ag and Al.From the above results,the low sintering temperature,good microwave dielectric properties,chemical compatibility with Al metal electrode,nontoxicity and price ad-vantage of the Bi 2O 3–MoO 3binary system,all indicate the po-tential for a new material system with ultralow temperature co?ring for multilayer devices application.

I.Introduction

ITH

the rapid development of mobile communication and satellite communication,microwave electronic devices are required to be developed and fabricated for miniaturization and integration.The low-temperature-co?red ceramic technology (LTCC)becomes an important fabricating technology that can integrate the passive components within a monolithic bulk module with IC chips mounted on its surface.By this technol-ogy,microwave dielectrics are stacked in multilayers and co?red with internal electrodes,such as Ag,Cu,Au,Al,their alloys etc.,in special patterns to ful?ll different electrical functions.1,2

There are a number of excellent microwave materials with sintering temperatures !10001C.These include materials in the following systems:ZnO–Nb 2O 5,3,4Bi(Nb,Ta,Sb)O 4,5–7BaO–TiO 2–Nb 2O 5system,8,9Li 2O–Nb 2O 5–TiO 2,10,11(Zr,Sn)TiO 4,12,13and the most popular (A 1A 2)(B 1B 2)O 3complex per-ovskite system.14–16There has been a number of attempts to use sintering aids to lower the sintering temperatures of these sys-tems,which have had limited success.Typical sintering aids,such as V 2O 5,CuO,Bi 2O 3,and B 2O 3,lower the sintering tem-peratures but also increase the dielectric loss (B 1/Q ).Hence,a more fruitful approach has been made to investigate new com-pounds with intrinsically lower sintering temperatures;some of these important binary systems include Bi 2O 3–TeO 2,TiO 2–TeO 2,CaO–TeO 2,BaO–TeO 2,ZnO–TeO 2binary systems,BaO–TiO 2–TeO 2ternary system,and Bi 2W 2O 9systems.17–24

In a recent investigation,we demonstrated that a single-phase Bi 2Mo 2O 9could be sintered at temperature B 6201C and that this material also possessed excellent dielectric properties at fre-quencies in the microwave range.Bi 2Mo 2O 9have been shown to have a relative dielectric permittivity B 38,Q f B 12500GHz and a temperature coef?cient of resonant frequency (TCF)around 131ppm/1C.25Based on this ?nding and the reported low melt-ing temperatures of many compounds in Bi 2O 3–MoO 3binary system,a more expansive investigation was made to access the microwave properties of these compounds.In this work,we will report on the sintering temperatures and the microwave dielec-tric properties of nearly all the intermediate compounds in Bi 2O 3–MoO 3binary system.There is also a preliminary assess-ment of the thermochemical compatibility between these com-pounds and electrode materials Ag and Al at the co?ring temperatures.

II.Experimental Procedure

Proportionate amounts of reagent-grade starting materials of Bi 2O 3(499%,Shu-Du Powders Co.Ltd.,Chengdu,China)and MoO 3(499%,Fuchen Chemical Reagents,Tianjin,China)were prepared by mixed-oxide approach according to the fol-lowing stoichiometries:Bi 2O 3–4MoO 3,Bi 2Mo 3O 12,Bi 2O 3–2.2MoO 3,Bi 2Mo 2O 9, 1.3Bi 2O 3–MoO 3,3Bi 2O 3–2MoO 3,and 7Bi 2O 3–MoO 3compositions.Powders were mixed and milled for 4h using a planetary mill (Nanjing Machine Factory,Nanj-ing,China)operating at a running speed of 150rpm with the Zirconia balls (2mm in diameter)used as milling media.The mixed oxides were calcined at temperatures between 6001and 7501C for 4h for each of the different compositions (the calci-nation temperatures are a little lower than the densi?cation temperatures of ceramic according to the following results).After being crushed,the powders were remilled for 5h using ZrO 2balls and deionized water solvent.Then dried powders were mixed with PVA binder and granulated,and then these powders were pressed into cylinders (10mm in diameter and 5mm in

X.M.Chen—contributing editor

This work was supported by the National 973-project of China (2009CB623302),National 863-project of China (2006AA03Z0429),and NSFC projects of China (60871044,50835007).

Author to whom correspondence should be addressed.e-mail:zhoudi1220@https://www.wendangku.net/doc/813672964.html,

Manuscript No.25819.Received January 30,2009;approved April 28,2009.

J ournal

J.Am.Ceram.Soc.,92[10]2242–2246(2009)

DOI:10.1111/j.1551-2916.2009.03185.x r 2009The American Ceramic Society

2242

height)in a steel die under a uniaxial pressure of200MPa.After debinding the samples were sintered at various temperatures ranging from6001to8501C for2h.To investigate the chemical compatibility of Bi2O3–MoO3compounds with Ag and Al pow-ders,20wt%Ag and20wt%Al were mixed with the different compounds and held at the sintering temperatures for4h.

The crystalline structures were investigated using X-ray diffraction(XRD)with Cu K a radiation(Rigaku D/MAX-2400X-ray diffractometer,Tokyo,Japan).Microstructures of co?red ceramics were observed on the fracture surface with scanning electron microscopy(JSM-6460,JEOL,Tokyo,Ja-pan).The dielectric properties were measured at microwave fre-quency by the TE01d shielded cavity method with a network analyzer(8720ES,Agilent,Palo Alto,CA)and a temperature chamber(Delta9023,Delta Design,Poway,CA).The TCF,t f, was calculated using the following formula:

t f?

f85àf25

f25?e85à25T

(1)

where f85and f25were the TE01d resonant frequencies at851and 251C,respectively.

III.Results and Discussion

The phase diagram and intermediate compounds of the Bi2O3–MoO3system have been studied by many researchers over the past four decades and it is now fairly well understood for Bi/ Mo r2.6.26–36A redrawn phase diagram and the densi?cation temperatures found in this study are shown in Fig.1(a),at this point(solid solution regions are ignored).Belyaev and Smoly-naninov34and Bleijenberg et al.35reported two congruently melt-ing compounds,Bi2O3–3MoO3(a)and Bi2O3–MoO3(g),in the region0–50mol%Bi2O3.Erman et al.27,28,36found additional compounds,Bi2O3–2MoO3(b)and(e)phases having solid sol-ubility with a composition of x Bi2O3–MoO3(1.3o x o1.4). Phases7Bi2O3–MoO3(m)and3Bi2O3–MoO3are low-and high-temperature forms of3Bi2O3–2MoO3and were also iden-ti?ed by XRD as reported by Egashira et al.27in Bi2O3-rich re-gion.The MoO3-rich region of the Bi2O3–MoO3binary system showed very low reaction temperatures and melting tempera-

tures below7001C.In Bi2O3-rich region the melting tempera-tures are always below10001C as shown in Fig.1(a).

The X-ray diffraction patterns for different compositions of Bi2O3–MoO3compounds sintered at their respective densi?cation temperatures are shown in Fig.2.Pure-phase dense bulk ceramics for a-Bi2Mo3O12,b-Bi2Mo2O9,g-Bi2MoO6,e-Bi26Mo10O69,and m-7Bi2O3–MoO3were all obtained,with relative densities above 96%with the exception of a-Bi2Mo3O12having a value at about 93%.For the Bi2O3–4MoO3sample,MoO3and a-Bi2Mo3O12 phases were found.The Bi2O3–2.2MoO3composition consisted of both a and b phases.All the compounds have low sintering temperatures below8501C as shown in Fig.1(a).The typical crystal structures and coordination numbers of both Mo and Bi are shown in Fig.1(b).The a-Bi2Mo3O12,b-Bi2Mo2O9, g-Bi2MoO6,and e-Bi26Mo10O69phases have low crystal sym-metries with a monoclinic structure.The space groups of a-Bi2Mo3O12and b-Bi2Mo2O9are both P21/n(14).The space groups of g-Bi2MoO6and e-Bi26Mo10O69are P21/c(14)and P2/a(13),respectively.The m-7Bi2O3–MoO3compound has a tetragonal symmetry within this phase(I4/m,number87).The coordination environment and bonding of the molybdenum cat-ion have been investigated previously in various molybdate phases.The molybdenum coordination is mostly found to be ?vefold37for the a-Bi2Mo3O12,where there are also distortions in the form of four short Mo–O bonds and intermediate bond length for each of the three Mo sites.In the Buttrey et al.’s33 study,there is evidence of a tetrahedral Mo coordination in both the b-Bi2Mo2O9and g-Bi2MoO6and the tetrahedra are also somewhat distorted.The molybdenum coordination of e-Bi26 Mo10O69is basically tetrahedral,but more distorted than that of b and g phases.The presence of four strongly bonded oxygens (with Mo–O distances below0.20nm)for each molybdenum site is a common feature to all bismuth molybdate phases with the exception of m-7Bi2O3–MoO3.All the bismuth molybdates

in-Fig.1.Phase diagram(data from Kohlmuller and Badaud,26Egashira et al.,27Chen and Smith,28and Bleijenberg et al.35)and densi?cation temperatures(solid dot with dash line)(a),typical crystal structures and coordination numbers in Bi2O3–MoO3system(b).

2θ(°)

Fig.2.X-ray diffraction patterns of Bi2O3–MoO3compounds sintered at different temperatures(a-Bi2Mo3O12,b-Bi2Mo2O9,g-Bi2MoO6, e-Bi26Mo10O69solid solution,and m-7Bi2O3–MoO3).

October2009Microwave Dielectric Properties of Bi2O3–MoO3System2243

troduced in this work show a tendency for the bismuth sites to group into channels,which extend through the crystal structure.The molybdenum polyhedral forms a discontinuous framework around these channels.The coordination environment and bonding of the molybdenum cation might have the dominant role on the melting temperatures and the densi?cation temper-atures of Bi 2O 3–MoO 3compounds.The densi?cation tempera-tures are approximately 80%–90%of the melting temperatures of the compounds.As shown in Fig.1(a),the sintering temper-atures linearly increased from 6001to 7501C as x value increased from 0.2to 0.5.When x value increased to 0.875,the sintering temperature of x Bi 2O 3–(1àx )MoO 3ceramic was maintained at around 8201C.In general,MoO 3-rich region possesses lower sintering temperatures than that of Bi 2O 3-rich region.More Bi atoms in structure will accelerate the discontinuity of molybde-num polyhedra.This could explain the increase of melting tem-perature and densi?cation temperature when x value increases.The phase compositions,sintering temperatures,and micro-wave dielectric properties of eight Bi 2O 3–MoO 3compositions are summarized in Table I.Among all the compounds studied,the b -Bi 2Mo 2O 9ceramic has the largest dielectric constant of 38and a positive TCF value at about 131ppm/1C.Near the Bi 2Mo 2O 9composition,there are also two single phases,a -Bi 2Mo 3O 12and g -Bi 2MoO 6,and both have large negative TCF values of à215.0and à113.8ppm/1C,respectively.These three phases offered large design ?exibility to obtain composite ce-ramics with adjustable TCF values by relative mixing of the phases,such as in the Bi 2O 3–2.2MoO 3composition with both a and b phases providing a near-zero TCF about à13.4ppm/1C.The high-frequency room-temperature permittivity is plotted as a function of Bi 2O 3ratio across the Bi 2O 3–MoO 3system.Also the TCFs are plotted as a function of permittivity and are shown in Figs.3(a)and (b).The b -Bi 2Mo 2O 9and Bi 2O 3–4MoO 3com-positions have the biggest and smallest permittivity,respectively.Dielectric constant in the microwave region is usually domi-nated by the ionic and electronic polarizability contributions of the oxide components.Attempts were made to calculate the re-spective permittivities of the Bi 2O 3–MoO 3compounds using the oxide additivity rule,38but in all cases there were poor correla-tions and consistent underestimates in the magnitude of the permittivity,which suggest that small dipolar or order–disorder contributions may also exist in these compounds.TCFs are de-termined by both the linear thermal expansion coef?cient a l and the temperature coef?cient of permittivity t e .39Because a l of microwave dielectrics is typically small (in the range of 0B 20ppm/1C),TCF mainly depends on t e .Although TCF values of all the microwave dielectric ceramics collected by Sebastian et al .2seemed to scatter randomly,t e values were often found to be sensitive to the value of permittivity in many high-permittivity systems with similar composition or similar crystal struc-ture.40,41For the Bi 2O 3–MoO 3system,TCF values were found to be approximately linear to the permittivity as shown in Fig.3(b).Bond valence considerations provided a useful way of examining bonding between every atom in particular struc-tures.42,43The bond valence of each atom can be obtained from the actual bond length and parameters provided by Brown and Altermatt.44Then the apparent valences of atoms at each site can be obtained by simply summing over all neighbors’bond valences.Results for every cation site the valence sums are plot-ted in Fig.4(a)as a function of Bi 2O 3ratio in Bi 2O 3–MoO 3.It can be seen that for most phases both Bi and Mo have large valence deviations except for the b -Bi 2Mo 2O 9and m -7Bi 2O 3–MoO 3phases.Valence deviation suggests the compressing or expanding of ions,which also means an unstable status of a cation at its position.The temperature coef?cients as a function of the relative valence deviation of both Bi and Mo are also shown in Fig.4(b).It is clear that larger valence deviation causes a larger TCF value.It can be inferred that ions with larger va-lences deviation will be more sensitive to temperature change than that with more normal valences.An exception was found for Mo valence deviation in a -Bi 2Mo 3O 12phase.This may be caused by the different environment of Mo atom in

Table I.Microwave Dielectric Properties of Bi 2O 3–MoO 3Compounds:a -Bi 2Mo 3O 12,b -Bi 2Mo 2O 9,g -Bi 2MoO 6,e -Bi 26Mo 10O 69,

and m -7Bi 2O 3–MoO 3

Compounds

Phase

ST (1C)

Frequency (GHz)

Permittivity

Q f (GHz)

TCF (ppm/1C)

Bi 2O 3–4MoO 3a 1MoO 3

600758.3711771.093007400à16077.0Bi 2Mo 3O 12

a 6107107.5771971.2218007800à21579.0Bi 2O 3–2.2MoO 3a 1

b 620710 5.7393571.5120007500à1372.0Bi 2Mo 2O 9b 620720 6.3023871.512500750013173.0Bi 2MoO 6

g 750720 6.4343171.2167007500à11475.01.3Bi 2O 3–MoO 3e 8207308.0572671.240007400à13975.03Bi 2O 3–2MoO 3e 820730 6.1933171.210007300à4174.07Bi 2O 3–MoO 3m 820730 6.2363071.21900730012072.5

ST,sintering temperature;TCF,temperature coef?cient of resonant frequency.

1520253035

40P e r m i t t i v i t y

Bi 2O 3 ratio in Bi 2O 3-MoO 3

T C F (p p m /°C )

Permittivity

Fig.3.Permittivity as a function of Bi 2O 3ratio in Bi 2O 3–MoO 3system (a)and temperature coef?cient of resonant frequency as a function of permittivity (b).

2244Journal of the American Ceramic Society—Zhou et al.Vol.92,No.10

a -Bi 2Mo 3O 12phase from other phases,i.e.a pentahedron rather than a tetrahedron.In fact,Bi 31has nearly twice bigger po-larizability than that of Mo 61from the data reported by Shan-non 45and Choi et al .46Hence,the Bi valence deviation should dominate the change trend of TCF values.

Finally,a brief and preliminary investigation of the chemical compatibility of Bi 2O 3–MoO 3compounds with common metal electrode materials is made.This was assessed by mixing 20wt%Ag and 20wt%Al powders with b -Bi 2Mo 2O 9,a -Bi 2Mo 3O 12,and Bi 2O 3–4MoO 3samples,which were co?red at 6001B 6301C for 4h.The XRD patterns of Bi 2O 3–MoO 3compounds co?red with 20wt%Ag are shown in Fig.5(a).In the MoO 3-rich re-gion,Ag seemed more easy to react with MoO 3and Bi 2O 3,and

then formed new product phases of AgBi(MoO 4)2and other unidenti?ed phases containing Ag and Mo.Figure 5(b)shows the XRD results of co?red samples with 20wt%Al.For the b -Bi 2Mo 2O 9and a -Bi 2Mo 3O 12samples,only pure b -Bi 2Mo 2O 9,a -Bi 2Mo 3O 12,and aluminum phases were identi?ed inferring that there were no chemical interactions.For the Bi 2O 3–4MoO 3samples,an Al 2(MoO 4)3phase was formed with excess MoO 3.Although Mo is an active element that easily reacts with Ag and Al,the formation of bismuth-based compounds effectively sup-press chemical reactions at these low temperatures.In summary,compounds in the Bi 2O 3–MoO 3binary system are attractive candidate materials for an Ultra LTCC technology given the intrinsic low ?ring temperatures,excellent microwave

dielectric

Fig.4.Valence of each cation as a function of Bi 2O 3ratio in Bi 2O 3–MoO 3system (a)(hollow circle J for each atom and solid dot for mean values)and temperature coef?cients of resonant frequencies as a function of the valence deviation of cations (b).

102030

2θ(°)

(c)(d)

Fig.5.X-ray diffraction patterns of Bi 2O 3–MoO 3compounds co?red with 20wt%Ag (a)and 20wt%Al (b)at around 6301C (J ,AgBi(MoO 4)2;?Al 2(MoO 4)3(PDF:23-0764)),BEI photos of Bi 2Mo 2O 9co?red with Al (c)and Bi 2Mo 3O 12

co?red with Al (d).

October 2009Microwave Dielectric Properties of Bi 2O 3–MoO 3System 2245

properties,and relatively high chemical stability with the elec-trode materials Al,at the low co?ring temperatures.

IV.Conclusions

A series of single phases and complex phases in Bi 2O 3–MoO 3binary system that exhibited very low sintering temperature and good microwave dielectric properties was introduced.Among them the b -Bi 2Mo 2O 9single phase has a dielectric constant of about 38,a Q f of about 12500GHz,and a positive TCF of about 131ppm/1C.Two other single phases near b -Bi 2Mo 2O 9in the Bi 2O 3–MoO 3binary diagram were a -Bi 2Mo 3O 12and g -Bi 2MoO 6and they both have negative TCF values.This offered the possibility to design some complex phases with near-zero TCF values and Bi 2O 3–2.2MoO 3designed in this work made an example.To apply this system in Ultra LTCC technology,we also studied the chemical compatibility of Bi 2O 3–MoO 3system with silver and aluminum.It is found that Ag reacts with samples easily and forms a AgBi(MoO 4)2phase,whereas the b -Bi 2Mo 2O 9and a -Bi 2Mo 3O 12ceramics did not appear to react with aluminum at 6301C.

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C.Lippens,and G.C.A.Shuit,‘‘Catalytic Oxidation of 1-Butene over Bismuth Molybdate Catalysts:I.The System Bi 2O 3–MoO 3,’’J.Catal.,4[5]581–5(1965).36

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2246Journal of the American Ceramic Society—Zhou et al.

Vol.92,No.10

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Abstract In recent years, as technology development and social progress, in particular, the popularity of a wide range of computers, computer application gradually from large-scale scientific computing shift large-scale mass data processing and workflow transaction management, which resulted in of the desktop computer as the core database management system for the development of environmental management information system in large-scale transaction processing and management, workflow applications, especially in the management of bank savings into the application has attracted much attention. Based on the Visual C + + database programming techniques to visualize the integrated development environment, Visual studio 2008 as development tool, Access 2007 database for the background to achieve a small bank savings management system, which mainly features include user registration, cancel the account, deposit , withdrawals, query history, user modify the information and other functions. To meet the needs of the masses but also to achieve the systematic management of bank savings, standardization, automation and intelligence to improve the efficiency of bank management. Key word: visual c + +; Visual studio 2008; Access 2007; Bank savings management 目录摘要 I Abstract II

银行储蓄系统

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目录一、概述------------------------------------------------- 3 1.1 课程设计的目的---------------------------------------------- 3 1.2 课程设计的内容---------------------------------------------- 3 1.3 课程设计的要求---------------------------------------------- 3 二、需求分析--------------------------------------------- 3 2.1 系统需求---------------------------------------------------- 3 2.2 数据字典---------------------------------------------------- 3 三、系统总体设计----------------------------------------- 3 3.1系统总体设计思路--------------------------------------------- 3 3.2 概念模型设计----------------------------------------- 3 3.2.1 局部E-R图------------------------------------------------ 3 3.2.2 全局E-R图------------------------------------------------ 3 3.3 逻辑结构设计------------------------------------------------ 3 3.4 数据库建立实施--------------------------------------- 3 3.4.1 建立数据库------------------------------------------------ 3 3.4.2 建立关系表------------------------------------------------ 3 四、系统实现--------------------------------------------- 3 五、系统评价--------------------------------------------- 3 六、课程设计心得、总结----------------------------------- 3参考文献：----------------------------------------------- 3致谢--------------------------------------------------- 3附录--------------------------------------------------- 3

相位调制与解调

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01银行储蓄管理系统可行性分析.docx

精心整理软银行储蓄管理系统可行性分析目录

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2.1.3 接口要求业务员键入储户的资料要全部一直显示在屏幕上；储户键入密码到系统以核对；计算机与打印机有高速传输的连接接口，最后以纸张的形式打印出清单给储户。 2.1.4 输入要求业务员从存取款表单输入数据，要迅速精确，适当调整输入时间，不能让客户等太久，但也不能让业务员太过忙碌以免影响正确率，造成用户损失。 2.1.5 输出要求要求快速准确地打印出存款或取款清单给客户。 2.2 开发目标近期目标：第一年内在一个银行建立一个银行内部计算机储蓄系统，初步实现银行储蓄系统计算机化，并保证该银行能够按期望顺利完成工作。长期目标：希望在三至四年内，在国内银行中建立该计算机储蓄系统，促进银行间的互联合作，实现银行储蓄系统的计算机管理体制，提高银行储蓄系统的整体水平；并实现银行储蓄系统的高效性、方便性、实用性、互联性，给储蓄用户带来方便和益处，从而提高银行的信用度，提高银行公司的经济效益和社会效益。 2.3 限制条件 2.3.1 开发时间 ( 只限于近期目标 ) 预定为半年。 2.3.2 运行环境 Windowsxp 及以上操作系统、数据库：MicrosoftSQLServer2000。MicrosoftVisualBasic6.0中文版. 2.3.3 使用寿命该系统至少使用四年以上。 2.3.4 进行可行性研究的方法采用调查方法：通过对银行业务员和客户的调查以获得第一手资料，确定客户和实际应用中的需求；然后经过座谈

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软件工程课程设计项目计划书项目名称：银行管理系统学院：计算机科学与技术学院专业：计算机科学与技术专业班级：姓名：指导教师：

2011 年11 月03 日

目录 1 系统主题................................................................................................................................. 错误!未定义书签。引言............................................................................................................................................. 错误!未定义书签。背景/选题动机/目的................................................................................................................... 错误!未定义书签。系统与“创新杯”的主题关系(2)......................................................................................... 错误!未定义书签。市场调查过程和结论(3) ............................................................................................................ 错误!未定义书签。 2 需求分析................................................................................................................................. 错误!未定义书签。概要............................................................................................................................................. 错误!未定义书签。使用场景..................................................................................................................................... 错误!未定义书签。可行性分析报告......................................................................................................................... 错误!未定义书签。应用领域/实用性分析............................................................................................................. 错误!未定义书签。未来发展方向............................................................................................................................. 错误!未定义书签。 3 团队组成和分工..................................................................................................................... 错误!未定义书签。 4 系统功能概述......................................................................................................................... 错误!未定义书签。功能需求分析............................................................................................................................. 错误!未定义书签。系统性能要求 ................................................................................................................. 错误!未定义书签。功能点列表................................................................................................................................. 错误!未定义书签。性能点列表................................................................................................................................. 错误!未定义书签。数据描述..................................................................................................................................... 错误!未定义书签。 5 系统设计概要......................................................................................................................... 错误!未定义书签。实现系统所采用的技术方案和技术亮点 ................................................................................. 错误!未定义书签。系统构架..................................................................................................................................... 错误!未定义书签。功能模块描述............................................................................................................................. 错误!未定义书签。 E-R图 ........................................................................................................................................ 错误!未定义书签。用例图......................................................................................................................................... 错误!未定义书签。概念数据模型图......................................................................................................................... 错误!未定义书签。业务模型..................................................................................................................................... 错误!未定义书签。界面 ........................................................................................................................................... 错误!未定义书签。 6 系统环境................................................................................................................................. 错误!未定义书签。开发平台..................................................................................................................................... 错误!未定义书签。 Client运行环境......................................................................................................................... 错误!未定义书签。

多银行资金管理系统

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