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BAS221中文资料

DATA SHEET

Product speci?cation

Supersedes data of 1999 Apr 26

1999May 07

DISCRETE SEMICONDUCTORS

BAS221

General purpose diode

book, halfpage

M3D154

General purpose diode

BAS221

FEATURES

?Small ceramic SMD package ?Switching speed: max.50ns ?General application ?Continuous reverse voltage:max.200V

?Repetitive peak reverse voltage:max.250V

?Repetitive peak forward current:max.1A.

APPLICATIONS

?General purpose switching in e.g.surface mounted circuits.

DESCRIPTION

The BAS221 is a general purpose diode fabricated in planar technology, and encapsulated in the ceramic SOD110 package.

Fig.1 Simplified outline (SOD110) and symbol.

handbook, 4 columns

MAM139

k

a

cathode mark

top view side view

bottom view

a

k

Marking code: JS.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).Note

1.Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.UNIT

V RRM repetitive peak reverse voltage ?250V V R continuous reverse voltage ?200V I F continuous forward current note 1; see Fig.2?300mA I FRM repetitive peak forward current t p <0.5ms;δ≤0.25

?1

A I FSM

non-repetitive peak forward current

square wave; T j =25°C prior to surge; see Fig.4t =1μs ?20A t =100μs ?7A t =10ms

?2A P tot total power dissipation T amb =25°C; note 1

?400mW T stg storage temperature ?65+150°C T j junction temperature

?

150

°C

General purpose diode

BAS221

THERMAL CHARACTERISTICS Note

1.Device mounted on an FR4 printed-circuit board.ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise speci?ed.SYMBOL PARAMETER

CONDITIONS

VALUE UNIT R th j-tp thermal resistance from junction to tie-point 200K/W R th j-a thermal resistance from junction to ambient

note 1

315

K/W

SYMBOL PARAMETER

CONDITIONS

MAX.

UNIT V F

forward voltage

see Fig.3I F =100mA 1V I F =200mA 1.25V I F =300mA

1.4

V I R

reverse current

see Fig.5V R =200V

100nA V R =200V; T j =150°C

100μA C d diode capacitance f =1MHz; V R =0; see Fig.62pF t rr

reverse recovery time

when switched from I F =30mA to I R =30mA; R L =100?; measured at I R =3mA; see Fig.7

50ns

General purpose diode

BAS221

GRAPHICAL DATA

Device mounted on an FR4 printed-circuit board.

Fig.2

Maximum permissible continuous forward current as a function of ambient temperature.

handbook, halfpage

50

100

200400

300

100

0200

150T amb (°C)

I F (mA)MDA986

(1)T j =150°C; typical values.(2)T j =25°C; typical values.(3)T j =25°C; maximum values.

Fig.3

Forward current as a function of forward voltage.

handbook, halfpage

02

600

I F (mA)

200

400

MBG384

1

V F (V)

(1)

(3)

(2)

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.T j =25°C prior to surge.

handbook, full pagewidth

MDA987

102

10

1

10?1

110

t p (μs)

I FSM (A)

102103

104

General purpose diode BAS221

Fig.5

Reverse current as a function of junction temperature.

handbook, halfpage

10210

200

MBG381

100

T j (o C)

I R (μA)1

102

10

1

(1)(2)

(1)V R =V Rmax ; maximum values.(2)V R =V Rmax ; typical values.

Fig.6

Diode capacitance as a function of reverse voltage; typical values.

f =1MHz; T j =25°C.

handbook, halfpage

048

6

21.0

0.8

0.2

0.6

0.4

MBG447

V R (V)

C d (pF)Fig.7 Reverse recovery time and waveforms.

(1)I R =3mA.

Input signal: reverse pulse rise time t r =0.6ns; reverse voltage pulse duration t p =100ns; duty factor δ=0.05.Oscilloscope: rise time t r =0.35ns.

Circuit capacitance C ≤1pF (oscilloscope input + parasitic capacitance).

handbook, full pagewidth

t rr

(1)

I F t

output signal

t r

t

t p

10%

90%

V R

input signal V = V I x R R F S

R = 50S

?I F

D.U.T.

R = 50i

?SAMPLING OSCILLOSCOPE

MGA881

General purpose diode

BAS221

PACKAGE OUTLINE

UNIT A max. REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC

EIAJ

mm

1.6

D 2.101.90

y 0.1

E 1.401.10

DIMENSIONS (mm are the original dimensions)

SOD110

97-04-14

cathode identifier

A

2

1D

y

E

0.5 1 mm

scale

DEFINITIONS LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data Sheet Status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the speci?cation.

General purpose diode BAS221

NOTES

? Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Internet: http://www.wendangku.net/doc/835691db33d4b14e852468e2.html

1999

64

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Printed in The Netherlands

115002/3180/02/pp8 Date of release: 1999May 07Document order number: 939775005977