IRFS4410中文资料

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

l Fully Characterized Capacitance and Avalanche SOA

l Enhanced body diode dV/dt and dI/dt Capability

PD - 96902A

D 2Pak IRFS4410

TO-220AB IRFB4410

TO-262IRFSL4410

IRFB4410IRFS4410IRFSL4410

HEXFET ? Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching

l

Hard Switched and High Frequency Circuits S

D G S

D G S

D G

IRFB4410/IRFS4410/IRFSL4410

Notes:

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

Repetitive rating; pulse width limited by max. junction temperature.

Limited by T Jmax , starting T J = 25°C, L = 0.14mH

R G = 25?, I AS = 58A, V GS =10V. Part not recommended for use above this value.

I SD ≤ 58A, di/dt ≤ 650A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%.

C oss eff. (TR) is a fixed capacitance that gives the same charging time

as C oss while V DS is rising from 0 to 80% V DSS .

C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS .

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J approximately 90°C.

Static @ T = 25°C (unless otherwise specified)

IRFB4410/IRFS4410/IRFSL4410

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.11101001000

V DS, Drain-to-Source Voltage (V) GS

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

Α

)

T J , Junction Temperature (°C)

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

110100

V DS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

020406080100120

Q G Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

IRFB4410/IRFS4410/IRFSL4410

Fig 10. Drain-to-Source Breakdown Voltage

Fig 11. Typical C Stored Energy

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

I S D , R e v

e r s e D r a i n C u r r e n t (A )

25

50

75

100

125

150

175

T C , Case Temperature (°C)

0102030405060708090100I D , D r a i n C u r r e n t (A )

T J , Temperature ( °C )

20

40

60

80

100

120

V DS, Drain-to-Source Voltage (V)

0.0

0.5

1.0

1.5

2.0

E n e r g y (μJ )

255075100125150175

Starting T J , Junction Temperature (°C)

100200300400500600700800900E A S , S i n g l e P u l s e A v a l a n c h e E n e r g y (m J )

IRFB4410/IRFS4410/IRFSL4410

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 14. Typical Avalanche Current vs.Pulsewidth

Fig 15. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15:(For further info, see AN-1005 at https://www.wendangku.net/doc/8b4391521.html,)1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax . This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P D (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. I av = Allowable avalanche current.

7. ?T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 14, 15).

t av = Average time in avalanche.D = Duty cycle in avalanche = t av ·f

Z thJC (D, t av ) = Transient thermal resistance, see Figures 13)

P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC

I av = 2D T/ [1.3·BV·Z th ]E AS (AR) = P D (ave)·t av

t 1 , Rectangular Pulse Duration (sec)

tav (sec)

25

50

75

100

125

150

175

Starting T J , Junction Temperature (°C)

050

100

150

200

250

E A R , A v a l a n c h e E n e r g y (m J )

IRFB4410/IRFS4410/IRFSL4410

Fig. 17 - Typical Recovery Current vs. di f /dt

Fig 16. Threshold Voltage vs. Temperature

Fig. 19 - Typical Stored Charge vs. di f /dt

Fig. 18 - Typical Recovery Current vs. di f /dt

-75-50-25

25

50

75100125150175200

T J , Temperature ( °C )

1.0

1.5

2.02.5

3.03.5

4.04.5

5.0

V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )

1002003004005006007008009001000

di f /dt (A/μs)

5

101520

I R R M (A

)

1002003004005006007008009001000

di f /dt (A/μs)

5

10

15

20

I R R M (A

)

1002003004005006007008009001000

di f /dt (A/μs)

50100150

200250300350

400Q r r (n C

)

1002003004005006007008009001000

di f /dt (A/μs)

50100150200250300350400Q r r (n C

)

IRFB4410/IRFS4410/IRFSL4410

Fig 22a. Switching Time Test Circuit Fig 22b.

Switching Time Waveforms

V V DS

90%

d(on)

d(off)

r

f

Fig 21b. Unclamped Inductive Waveforms

Fig 21a.

Unclamped Inductive Test Circuit

I AS

V DD

Id

Qgs1

Qgs2Qgd Qgodr

Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel

? Power MOSFETs

* V GS = 5V for Logic Level Devices

IRFB4410/IRFS4410/IRFSL4410

TO-220AB Package Outline Dimensions are shown in millimeters (inches)

TO-262 Package Outline

IRFB4410/IRFS4410/IRFSL4410

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.wendangku.net/doc/8b4391521.html, for sales contact information .11/04

D 2Pak Tape & Reel Information

3

4

4

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)1.50 (.059)

4.10 (.161)3.90 (.153)

TRL

FEED DIRECTION 10.90 (.429)10.70 (.421)

16.10 (.634)15.90 (.626)

1.75 (.069)1.25 (.049)

11.60 (.457)11.40 (.449)

15.42 (.609)15.22 (.601)

4.72 (.136)4.52 (.178)

24.30 (.957)23.90 (.941)

0.368 (.0145)0.342 (.0135)

1.60 (.063)1.50 (.059)

13.50 (.532)12.80 (.504)330.00(14.173) MAX.

27.40 (1.079)23.90 (.941)

60.00 (2.362) MIN.

30.40 (1.197) MAX.

26.40 (1.039)24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.