AH101-G中文资料
Medium Power, High Linearity Amplifier
Product Information
Product Features
x 50 – 1500 MHz
x +47 dBm Output IP3 x 13.5 dB Gain x +26.5 dBm P1dB x MTTF > 1000 Years x Internally Matched x Single +9 V Supply x Lead-free/Green/RoHS-compliant SOT-89 Package
Applications
x Mobile Infrastructure x CATV / DBS
x Defense / Homeland Security
Product Description
The AH101 is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and an internally matched device makes it ideal for both narrow and broadband applications. Only dc blocking and bypass capacitors as well as an RF choke are required for operation.
Superior thermal design allows the product to achieve +46 dBm IP3 performance at a mounting temperature of +85 q C with an associated MTTF of greater than 1000 years. The AH101 is available in the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The broadband amplifier uses a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required.
Functional Diagram
Function Pin No. Input 1 Ground 2 Output / Bias 3 Ground 4
Specifications (1)
Parameter
Units Min
Typ
Max
Operational Bandwidth MHz 50 1500 Test Frequency MHz 800 Gain
dB 12 13.5 Input Return Loss dB 20 Output Return Loss dB 15 Output IP3 (2) dBm +43 +47 Output P1dB dBm +26.5 Noise Figure
dB 3.5 Operating Current Range mA 170 200 230 Supply Voltage
V
+9
1. Test conditions unless otherwise noted: T = 25 oC, Vdd = +9 V in a 50 ohm test fixture.
2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature -40 to +85 q C Storage Temperature -55 to +150 q C DC Voltage
+11 V RF Input Power (continuous) +18 dBm Junction Temperature
220 q C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter Units
Typical
Frequency MHz 50 450 900 1500 Gain dB 13.6 13.8 13.5 12.7 S11 dB -23 -27 -21 -14 S22
dB -8 -14 -18 -16 Output P1dB dBm +26.1 +26.5 +26.5 +25 Output IP3 (2) dBm +45 +47 +47 +47 Output IP2 dBm +63 +63 +60 +59 Noise Figure dB 4.4
3.4 3.6
4.2
Supply Current mA 200 Supply Voltage
V
+9
Ordering Information
Part No. Description
AH101-G
Med. Power High Linearity Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH101-PCB 50-1500 MHz Fully Assembled Evaluation Board
Medium Power, High Linearity Amplifier
Product Information
Typical Device Data
V DS = +9 V, I DS = 200 mA, T = 25 C, unmatched 50 ohm system
Gain vs. Frequency over Temperature
400
8001200
1600
Frequency (MHz)
Noise Figure vs. Frequency over Vds
25 C
400
8001200
1600
Frequency (MHz)
S22 vs. Frequency over Temperature
+9V Vds
400
8001200
1600
Frequency (MHz)
OIP3 vs. Frequency over Vds
+8 dBm/tone, 25C
400
8001200
1600
Frequency (MHz)
P1dB vs. Frequency over Vds
900 MHz, 25 C
18202224
26280
400
8001200
1600
Frequency (MHz)
Medium Power, High Linearity Amplifier
Product Information
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek (r =4.2), four layer, 1 oz copper
Microstrip line details: width = .026”, spacing = .026”
Application Circuit: 900 MHz (AH101-PCB)
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1, C2, and L1 are used as placeholders for a different device on the same PCB layout. They are not needed for the AH101. 3. Component sizes are 0603 unless otherwise noted.
Gain vs. Frequency
68101214160
400
8001200
1600
Frequency (MHz)
Medium Power, High Linearity Amplifier Product Information AH101 CATV Push-Pull Reference Design
Frequency MHz 50 450 750 860
S21 dB 11.4 10.8 10.4 10.2
S11 dB -17 -19 -19 -25
S22 dB -17 -20 -16 -14
OIP2 (2)dBm 84
OIP3 (3)dBm 50
Noise Figure dB 6 5.1 5.3 5.4
CSO (4)dBc -83.3
CTB (4)dBc -68.6
Supply Bias 9 V @ 200 mA
Notes:
1. Parameters reflect performance in the 75 push-pull application circuit.
2. OIP2 is measured with +17 dBm at the fundamental.
3. OIP3 is measured with 2 tones at +17 dBm/tone with 10 MHz spacing.
4. 77 Channels Flat Loading, Pin = 34 dBmV / channel.
C1
The AH101 should be thermally mounted according to what is shown in the datasheet.
Gain vs. Frequency
2
4
6
8
10
12
02004006008001000
Frequency (MHz)
OIP2 & OIP3 vs. Power Out
40
50
60
70
80
90
100
8101214161820
Power Out / Tone (dBm)
Medium Power, High Linearity Amplifier
Product Information
AH101-G (Green / Lead-free SOT-89 Package) Mechanical Information
Thermal Specifications
Parameter
Rating
Operating Case Temperature -40 to +85 q C Thermal Resistance, Rth (1) 25 q C / W Junction Temperature, Tj (2)
130 q C
1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of +9V, 200 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C.
will be marked with an An alphanumeric lot ) is also marked below the on the top surface of the obsolete tin-lead package is an “AH101” designator specifications for this part are website in the “Application
1000V min. 1000V min. C convection reflow vias are critical for the proper ) diameter drill and have a final plated ).
copper as possible to inner and outer the part to ensure optimal thermal can be added near the part to fasten a heatsink. Ensure that the ground / 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
M T T F v s. G N D T a b T e m p e ratu re
110
100
1000
60
70
8090100110120
T a b T e m p e ra tu re (°C )