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DMN3404L-7;中文规格书,Datasheet资料

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V (BR)DSS

R DS(ON) max I D max T A = 25°C 30V

28m ? @ V GS = 10V

5.8A

42m ? @ V GS = 4.5V

4.8A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Battery Charging ? Power Management Functions ? DC-DC Converters ? Portable Power Adaptors

Features and Benefits

? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Lead Free By Design/RoHS Compliant (Note 1) ? "Green" Device (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

? Case: SOT23 ? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminals: Finish ? Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 ? Terminals Connections: See Diagram Below ? Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMN3404L-7 Commercial SOT23 3000/Tape & Reel DMN3404LQ-7

Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at https://www.wendangku.net/doc/868891687.html,.

3. For packaging details, go to our website at https://www.wendangku.net/doc/868891687.html,.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C

Month Jan Feb

Mar Apr May Jun Jul

Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N

Top View Internal Schematic Top View Gate 34N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 34N

Y M

Maximum Ratings @T A = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GSS

±20 V Continuous Drain Current (Note 4) V GS = 10V

Steady State T A = 25°C T A = 70°C

I D 4.2

3.5 A Continuous Drain Current (Note 5) V GS = 10V

Steady State T A = 25°C T A = 70°C

I D 5.8

4.9 A Pulsed Drain Current I DM 30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) P D

0.72 W Thermal Resistance, Junction to Ambient @T A = 25°C R θJA

173 °C/W Power Dissipation (Note 5) P D

1.4 W Thermal Resistance, Junction to Ambient @T A = 25°C R θJA

90 °C/W Operating and Storage Temperature Range T J, T STG -55 to +150 °C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic

Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage

BV DSS 30 - - V V GS = 0V, I D = 250μA Zero Gate Voltage Drain Current TJ = 25°C I DSS - - 1.0 μA V DS = 30V, V GS = 0V Gate-Source Leakage

I GSS - - ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

V GS(th) 1.0 1.5 2.0 V V DS = V GS , I D = 250μA

Static Drain-Source On-Resistance R DS (ON) -

24 33 28

42 m Ω V GS = 10V, I D = 5.8A V GS = 4.5V, I D = 4.8A

Forward Transfer Admittance |Y fs | - 10 - S V DS = 5V, I D = 5.8A Diode Forward Voltage

V SD - 0.75 1.0 V V GS = 0V, I S = 1A

DYNAMIC CHARACTERISTICS Input Capacitance C iss - 386 - pF

V DS = 15V, V GS = 0V, f = 1.0MHz

Output Capacitance

C oss - 44 - pF

Reverse Transfer Capacitance C rss - 39 - pF Gate Resistance R g - 1.51 - Ω V DS = 0V, V GS = 0V, f = 1MHz Total Gate Charge Q g - 9.2 - nC V GS = 10V, V DS = 15V, I D = 5.8A Gate-Source Charge Q gs - 1.2 - nC Gate-Drain Charge Q gd - 1.8 - nC

Turn-On Delay Time t D(on) - 3.41 - ns V DD = 15V, V GS = 10V, R L = 2.6?, R G = 3? Turn-On Rise Time t r - 6.18 - ns Turn-Off Delay Time t D(off) - 13.92 - ns Turn-Off Fall Time

t f

- 2.84 - ns

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

00.5

1 1.5

2 2.5

3 3.5

4 4.5

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)DS

I , D R A I N C U R R E N T (A )

D 1.5

2 2.5

3 3.54

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)GS

I , D R A I N C U R R E N T (A )

D 0

0.050.1

0.150.2

0.25

0.3R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S (O N )ΩFig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)D

I , DRAIN CURRENT (A)

D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature

R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S (O N )Ω

R , D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )

D S O N Fig. 5 On-Resistance Variation with T emperature T , AMBIENT TEMPERATUR

E (°C)

R , D R A I N -S O U R C E

O N -R E S I S T A N C E ()

D S O N ΩFig. 6 On-Resistance Variation with T emperature

T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

A V , G A T E T H R E S H O L D V O L T A G E (V )

G S (T H )

468101214161820Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)SD I , S O U R C E C U R R E N T (A )S

Fig. 9 Typical T otal Capacitance

V , DRAIN-SOURCE VOLTAGE (V)DS C , C A P A C I T A N C E (p F )

100

1,000

10,000

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V)

DS I , L E A K A G E C U R R E N T (n A )

D S S

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC) g V , G A T E -S O U R C E V O L T A G E (V )

G S

Fig. 12 Safe Operation Area

V , DRAIN-SOURCE VOLTAGE (V)

DS I , D R A I N C U R R E N T (A )

0.00001

0.00010.0010.010.11101001,000

r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E

Fig. 13 Transient Thermal Response

t , PULSE DURATION TIME (s)1

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11

0° 8°

- All Dimensions in mm

Dimensions Value (in mm)

2.9 X 0.8 Y 0.9 C 2.0 E 1.35

X E

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMN3404L-7