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AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

RF Power LDMOS Transistors

N?Channel Enhancement?Mode Lateral MOSFETs

These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920 to 960 MHz.

?Typical Doherty Single?Carrier W?CDMA Performance: V DD = 28 Volts,I DQA = 680 mA, V GSB = 0.4 Vdc, P out = 56 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency G ps (dB)h D (%)Output PAR

(dB)

ACPR (dBc)920 MHz 17.947.48.2?28.5940 MHz 18.048.58.1?31.2960 MHz

18.2

47.3

7.9

?35.0

Features

?Advanced High Performance In?Package Doherty

?Greater Negative Gate?Source Voltage Range for Improved Class C Operation

?Designed for Digital Predistortion Error Correction Systems

?In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13?inch Reel.

Document Number: AFT09H310?03S

Rev. 1, 9/2013

Freescale Semiconductor Technical Data

920?960 MHz, 56 W AVG., 28 V AIRFAST RF POWER LDMOS

TRANSISTORS

AFT09H310?03SR6AFT09H310?04GSR6

AFT09H310-03S

RF Device Data

AFT09H310?03SR6 AFT09H310?04GSR6Table 1. Maximum Ratings

Rating

Symbol Value Unit Drain?Source Voltage V DSS ?0.5, +70Vdc Gate?Source Voltage V GS ?6.0, +10Vdc Operating Voltage

V DD 32, +0Vdc Storage Temperature Range T stg ?65 to +150°C Case Operating Temperature Range T C ?40 to +150°C Operating Junction Temperature Range (1,2)T J ?40 to +225

°C CW Operation @ T C = 25°C Derate above 25°C

CW

2560.9

W W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol Value (2,3)

Unit Thermal Resistance, Junction to Case

Case Temperature 75°C, 56 W W?CDMA, 28 Vdc, I DQA = 680 mA, V GSB = 0.4 Vdc, 940 MHz

R θJC

0.41

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class Human Body Model (per JESD22?A114)2Machine Model (per EIA/JESD22?A115)B Charge Device Model (per JESD22?C101)

IV

Table 4. Electrical Characteristics (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc)

I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate?Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)

I GSS

1

μAdc

On Characteristics ? Side A (4) (Carrier)Gate Threshold Voltage

(V DS = 10 Vdc, I D = 242 μAdc)

V GS(th)0.9 1.5 1.9Vdc Gate Quiescent Voltage

(V DD = 28 Vdc, I DA = 680 mAdc, Measured in Functional Test)V GSA(Q) 1.7 2.1 2.5Vdc Drain?Source On?Voltage

(V GS = 10 Vdc, I D = 1.0 Adc)

V DS(on)

0.05

0.2

0.4

Vdc

On Characteristics ? Side B (4) (Peaking)Gate Threshold Voltage

(V DS = 10 Vdc, I D = 310 μAdc)V GS(th)0.9 1.5 1.9Vdc Drain?Source On?Voltage

(V GS = 10 Vdc, I D = 1.0 Adc)

V DS(on)

0.05

0.2

0.4

Vdc

1.Continuous use at maximum temperature will affect MTTF.

2.MTTF calculator available at http://www.wendangku.net/doc/881a34c6f121dd36a32d82bd.html/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.

3.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.wendangku.net/doc/881a34c6f121dd36a32d82bd.html/rf.Select Documentation/Application Notes ? AN1955.

4.Each side of device measured separately.

(continued)

AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

Table 4. Electrical Characteristics (T A = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQA = 680 mA, V GSB = 0.4 Vdc, P out = 56 W Avg.,f = 920 MHz, Single?Carrier W?CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.Power Gain G ps 17.717.920.7dB Drain Efficiency

ηD 45.347.4—%Output Peak?to?Average Ratio @ 0.01% Probability on CCDF PAR 7.68.2—dB Adjacent Channel Power Ratio

ACPR

?28.5

?27.3

dBc

Load Mismatch (In Freescale Test Fixture, 50 ohm system) I DQA = 680 mA, f = 940 MHz

VSWR 10:1 at 32 Vdc, 280 W CW (4) Output Power

(3 dB Input Overdrive from 180 W CW Rated Power)

No Device Degradation

Typical Performances (2) (In Freescale Doherty Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQA = 680 mA, V GSB = 0.4 Vdc,920?960 MHz Bandwidth

P out @ 1 dB Compression Point, CW P1dB —180—W P out @ 3 dB Compression Point (5)

P3dB —390—W AM/PM

(Maximum value measured at the P3dB compression point across the 920 to 960 MHz frequency range)

Φ

31.7

°

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)VBW res —45—MHz Gain Flatness in 40 MHz Bandwidth @ P out = 56 W Avg.G F —0.3—dB Gain Variation over Temperature (?30°C to +85°C)

ΔG —0.015—dB/°C Output Power Variation over Temperature (?30°C to +85°C)

ΔP1dB

0.035

dB/°C

1.Part internally matched both on input and output.

2.Measurements made with device in an asymmetrical Doherty configuration.

3.Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts.

4.Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

5.P3dB = P avg + 7.0 dB where P avg is the average output power measured using an unclipped W?CDMA single?carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

AFT09H310-03S

RF Device Data

AFT09H310?03SR6 AFT09H310?04GSR6Figure 2. AFT09H310?03SR6 Test Circuit Component Layout — 920?960 MHz

AFT09H310-03S

Table 5. AFT09H310?03SR6 Test Circuit Component Designations and Values — 920?960 MHz

Part

Description

Part Number

Manufacturer C1, C2, C3, C447 pF Chip Capacitors GQM1875C2E470JB15Muruta C5, C68.2 pF Chip Capacitors GQM1875C2E8R2CB12D Muruta C7, C10 1.2 pF Chip Capacitors GQM1875C2E1R2BB15Muruta C8, C9 6.8 pF Chip Capacitors GQM1875C2E6R8BB15Muruta C11, C12

10 μF Chip Capacitors GQM1875C2E6R8CB12D Muruta C13, C14, C15, C16,C17, C1868 pF Chip Capacitors GQM2195C2E680GB15Muruta C19, C20, C21 6.8 pF Chip Capacitors GQM2195C2E6R8BB15Muruta C22 3.3 pF Chip Capacitor GQM2195C2E3R3BB15Muruta C23, C24 3.9 pF Chip Capacitors GQM2195C2E3R9BB15Muruta C25, C26 4.7 pF Chip Capacitors GQM2195C2E4R7BB15Muruta C27, C28 1.8 pF Chip Capacitors GQM2195C2E1R8BB15Muruta C29, C3010 μF Chip Capacitors C5750X7S2A106M230K TDK C31, C32470 μF, 63 V Chip Capacitors MCGPR100V477M16X32-RH Multicomp R1, R2 5.1 Ω, 1/10 W Chip Resistors CRCW06035R10FKEA Vishay R350 Ω, 10 W Termination

06012A25X50?2Anaren Z1800?1000 MHz, 5 dB, Directional Coupler XC0900A-05S Anaren PCB

0.020″, εr = 3.5

RO4350

Rogers

AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

TYPICAL CHARACTERISTICS

P A R C (d B )-2.6-1

-1.4-1.8-2.2

AFT09H310-03S

-3

820

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

f, FREQUENCY (MHz)

Figure 3. Single?Carrier Output Peak?to?Average Ratio Compression

(PARC) Broadband Performance @ P out = 56 Watts Avg.

102018-4250403020-22-26-30-34ηD , D R A

AFT09H310-03S

I N E F F I C I E N C Y (%)

G p s , P O W E R G A I N (

AFT09H310-03S

d B )

171615141312840

860

880

900

920

940

960

980

10-38A C P R (d B c )

Figure 4. Intermodulation Distortion Products

versus Two?Tone Spacing

TWO-TONE SPACING (MHz)

10

1

100

I M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )

Figure 5. Output Peak?to?Average Ratio Compression (PARC) versus Output Power

P out , OUTPUT POWER (WATTS)

-230

1-1-3O U T P U T C O M P R E S S I O N A T 0.01%P R O B A B I L I T Y O N C C D F (d B )

15

45

60

90060

50

40

3020

10

ηD , D R A I N E F F I C I E N C Y (%)

75

A C P R (d

B c )-40

-28-30-32-36-34-3820

G p s , P O W E R G A I N (d B )

191817161514

-42

AFT09H310-03S

RF Device Data

AFT09H310?03SR6 AFT09H310?04GSR6TYPICAL CHARACTERISTICS

1

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

P out , OUTPUT POWER (WATTS) AVG.

Figure 6. Single?Carrier W?CDMA Power Gain, Drain

Efficiency and ACPR versus Output Power

-10-201521

06050403020ηD , D R A I N E F F I C I E N C Y (%)G p s , P O W E R G A I N (d B )

201910

100

400

10-60

A C P R (d

B c )

18

17160-30-40-50Figure 7. Broadband Frequency Response

024f, FREQUENCY (MHz)

16128G A I N (d B )204750

800

850

900

950

1000

1050

1100

1150

AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

V DD = 28 Vdc, I DQA = 694 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle

f (MHz)Z source (W )Z in (W )Max Output Power

P1dB

Z load (1)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.16 - j2.31 1.24 + j2.27 3.28 - j1.3720.352.819054.5-8.1940 1.35 - j2.39 1.40 + j2.40 3.44 - j1.4920.252.919355.0-7.5960

1.63 - j

2.70

1.64 + j

2.55

3.64 - j1.33

20.1

53.0

200

55.7

-8.2

f (MHz)Z source (W )Z in (W )Max Output Power

P3dB

Z load (2)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.16 - j2.31 1.26 + j2.47 4.06 - j1.2117.953.924456.5-13940 1.35 - j2.39 1.44 + j2.60 4.14 - j1.1418.053.924757.5-12960

1.63 - j

2.70

1.72 + j

2.76

4.29 - j0.91

17.8

54.0

252

58.0

-13

(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.

Z source = Measured impedance presented to the input of the device at the package reference plane.Z in = Impedance as measured from gate contact to ground.

Z load = Measured impedance presented to the output of the device at the package reference plane.

Figure 8. Carrier Side Load Pull Performance — Maximum Power Tuning

V DD = 28 Vdc, I DQA = 694 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle

f (MHz)Z source (W )Z in (W )Max Drain Efficiency

P1dB

Z load (1)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.16 - j2.310.81 + j1.890.96 - j0.0324.849.99968.9-21940 1.35 - j2.390.94 + j1.980.95 - j0.1424.949.99869.9-21960

1.63 - j

2.70

1.07 + j

2.08

0.86 - j0.21

25.0

49.6

92

71.0

-24

f

AFT09H310-03S

(MHz)Z source (W )Z in (W

AFT09H310-03S

)Max Drain Efficiency

AFT09H310-03S

AFT09H310-03S

P3dB

Z load (2)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.16 - j2.310.89 + j2.16 1.06 + j0.0322.850.812170.9-29940 1.35 - j2.39 1.06 + j2.28 1.10 - j0.0722.850.912472.0-27960

1.63 - j

2.70

1.39 + j

2.49

1.40 - j0.21

21.7

51.8

153

71.6

-23

(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.

Z source = Measured impedance presented to the input of the device at the package reference plane.Z in = Impedance as measured from gate contact to ground.

Z load = Measured impedance presented to the output of the device at the package reference plane.

Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning

Input Load Pull Tuner and Test Circuit

Z source Z in

Z load

Output Load Pull Tuner and Test Circuit

AFT09H310-03S

RF Device Data

AFT09H310?03SR6 AFT09H310?04GSR6V DD = 28 Vdc, V GSB = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle

f (MHz)Z source (W )Z in (W )Max Output Power

P1dB

Z load (1)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.72 - j3.65 1.84 + j3.30 4.60 - j2.1313.753.824155.6-8.3940 2.37 - j3.46 2.28 + j3.50 5.46 - j2.5513.353.924553.1-7.3960

2.89 - j

3.77

2.85 + j

3.70

5.68 - j2.16

13.3

54.0

250

54.1

-7.9

f (MHz)Z source (W )Z in (W )Max Output Power

P3dB

Z load (2)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.72 - j3.65 1.99 + j3.42 5.63 - j2.0211.254.931256.1-11940 2.37 - j3.46 2.43 + j3.61 6.13 - j1.8011.155.031355.8-10960

2.89 - j

3.77

3.06 + j3.78

6.35 - j1.22

11.1

55.0

318

56.3

-10

(1) Load impedance for optimum P1dB power.(2) Load impedance for optimum P3dB power.

Z source = Measured impedance presented to the input of the device at the package reference plane.Z in = Impedance as measured from gate contact to ground.

Z load = Measured impedance presented to the output of the device at the package reference plane.

Figure 10. Peaking Side Load Pull Performance — Maximum Power Tuning

V DD = 28 Vdc, V GSB = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle

f (MHz)Z source (W )Z in (W )Max Drain Efficiency

P1dB

Z load (1)(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.72 - j3.65 1.63 + j3.16 1.40 - j0.5714.951.313570.4-15940 2.37 - j3.46 1.95 + j3.290.95 - j0.7514.850.110272.3-17960

2.89 - j

3.77

2.52 + j

3.52

1.33 - j0.87

14.8

51.1

130

72.7

-16

f (MHz)Z source

AFT09H310-03S

(W )Z in (W )

AFT09H310-03S

Max Drain Efficiency

P3dB

Z load

AFT09H310-03S

(2)

AFT09H310-03S

(W )Gain (dB)(dBm)(W)h D (%)AM/PM (5)920 1.72 - j3.65 1.74 + j3.32 1.57 - j0.4512.952.216771.4-19940 2.37 - j3.46 2.16 + j3.51 1.67 - j0.5412.852.317172.1-18960

2.89 - j

3.77

2.71 + j

3.69

1.55 - j0.69

12.8

52.2

164

73.2

-20

(1) Load impedance for optimum P1dB efficiency.(2) Load impedance for optimum P3dB efficiency.

Z source = Measured impedance presented to the input of the device at the package reference plane.Z in = Impedance as measured from gate contact to ground.

Z load = Measured impedance presented to the output of the device at the package reference plane.

Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning

Input Load Pull Tuner and Test Circuit

Z source Z in

Z load

Output Load Pull Tuner and Test Circuit

AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

P1dB ? TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 940 MHz

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

2

340

6

51

-51

-12

34

6

0-2-35

-41

2

34

6

5

1

NOTE:

=Maximum Output Power =Maximum Drain Efficiency

Gain

Drain Efficiency Linearity

Output Power

Figure 12. P1dB Load Pull Output Power Contours (dBm)

REAL (Ω)

-51-1

I M A G I N A R Y (Ω)

2

34

6

0-2-3

5

-41

Figure 13. P1dB Load Pull Efficiency Contours (%)

REAL (Ω)

I M A G I N A R Y (Ω)

I M A G I N A R Y (Ω)

Figure 14. P1dB Load Pull Gain Contours (dB)REAL (Ω)

Figure 15. P1dB Load Pull AM/PM Contours (5)

REAL (Ω)

I M A G I N A R Y (Ω)

AFT09H310-03S

RF Device Data

AFT09H310?03SR6 AFT09H310?04GSR6P3dB ? TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 940 MHz

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

2

34

6

5

1

-51

-12

34

6

0-2-35

-41

12

34

6

05

1

NOTE:

=Maximum Output Power =Maximum Drain Efficiency

Gain

Drain Efficiency Linearity

Output Power

Figure 16. P3dB Load Pull Output Power Contours (dBm)

REAL (Ω)

-51-1

I M A G I N A R Y (Ω)

2

34

6

0-2

-35

-41Figure 17. P3dB Load Pull Efficiency Contours (%)

REAL (Ω)

I M A G I N A R Y (Ω)

I M A G I N A R Y (Ω)

Figure 18. P3dB Load Pull Gain Contours (dB)REAL (Ω)

Figure 19. P3dB Load Pull AM/PM Contours (5)

REAL (Ω)

I M A G I N A R Y (Ω)

AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

P1dB ? TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 940 MHz

3

4

5

1

2

6

7

3

4

5

1

2

6

7

3

4

5

1

2

6

7

-50

-2

-1-3

-4

-50

-2

-1-3-4

-50

-2

3

4

5

1

-1-3

-4

2

6

7

I M A G I N A R Y (Ω)

NOTE:

=Maximum Output Power =

AFT09H310-03S

Maximum Drain Efficiency

AFT09H310-03S

Gain

Drain Efficiency Linearity

Output Power

Figure 20. P1dB Load Pull Output Power Contours (dBm)

REAL (Ω)-50

-2

I M A G I N A R Y (Ω)

-1-3

-4

Figure 21. P1dB Load Pull Efficiency Contours (%)

REAL (Ω)

Figure 22. P1dB Load Pull Gain Contours (dB)REAL (Ω)

Figure 23. P1dB Load Pull AM/PM Contours (5)

REAL (Ω)

I M A G I N A R Y (Ω)

I M A G I N A R Y (Ω)

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

RF Device Data

AFT09H310?03SR6 AFT09H310?04GSR6P3dB ? TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 940 MHz

2

3

4

7

1

5

62

3

4

7

1

5

6

2

3

4

7

1

5

6

-50

-2

-1-3

-4

-50

-2-1-3-4

-5

-2

-1

-3-4

I M A G I N A R Y (Ω)

NOTE:

=Maximum Output Power =

AFT09H310-03S

Maximum Drain Efficiency

AFT09H310-03S

Gain

Drain Efficiency Linearity

Output Power

Figure 24. P3dB Load Pull Output Power Contours (dBm)

REAL (Ω)

-50

-2I M A G I N A R Y (Ω)

234

7

-1-3

-4

1

Figure 25. P3dB Load Pull Efficiency Contours (%)

REAL (Ω)

Figure 26. P3dB Load Pull Gain Contours (dB)REAL (Ω)

Figure 27. P3dB Load Pull AM/PM Contours (5)

REAL (Ω)

I M A G I N A R Y (Ω)

56

I M A G I N A R Y (Ω)

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

AFT09H310-03S

PACKAGE DIMENSIONS

AFT09H310-03S

AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6 RF Device Data

AFT09H310-03S

AFT09H310-03S

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AFT09H310-03S

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AFT09H310-03S

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AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

AFT09H310-03S

AFT09H310-03S

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AFT09H310-03S

AFT09H310-03S

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AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6 RF Device Data

AFT09H310-03S

AFT09H310-03S

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AFT09H310-03S

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AFT09H310-03S

AFT09H310-03S

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AFT09H310-03S

AFT09H310?03SR6 AFT09H310?04GSR6

RF Device Data

AFT09H310-03S

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents, software and tools to aid your design process.

Application Notes

?AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

?EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

?Electromigration MTTF Calculator

?RF High Power Model

?.s2p File

Development Tools

?Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.wendangku.net/doc/881a34c6f121dd36a32d82bd.html, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0July 2013?Initial Release of Data Sheet

1Sept. 2013?On Characteristics table, Side B (Peaking): corrected V GS(th) Typ value from 2.0 to 1.5 Vdc, p. 2

AFT09H310?03SR6 AFT09H310?04GSR6 RF Device Data

AFT09H310-03S

RF Device Data

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