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APT10086BVFR中文资料

APT10086BVFR

1000V

13A 0.860

Power MOS V ? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V ?also achieves faster switching speeds through optimized gate layout.

?Fast Recovery Body Diode ?100% Avalanche Tested

?Lower Leakage ?Popular TO-247 Package

?Faster Switching

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V GS = 0V, I D = 250μA)On State Drain Current 2 (V DS > I D(on) x R DS(on) Max, V GS = 10V)Drain-Source On-State Resistance 2 (V GS = 10V, 0.5 I D[Cont.])Zero Gate Voltage Drain Current (V DS = V DSS , V GS

= 0V)

Zero Gate Voltage Drain Current (V DS = 0.8 V DSS

, V GS = 0V, T C = 125°C)Gate-Source Leakage Current (V GS = ±30V, V DS = 0V)Gate Threshold Voltage (V DS = V GS , I D = 1.0mA)

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MAXIMUM RATINGS

All Ratings: T C = 25°C unless otherwise specified.

Symbol V DSS I D I DM V GS V GSM P D T J ,T STG

T L I AR E AR E AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1

Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor

Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.Avalanche Current 1 (Repetitive and Non-Repetitive)Repetitive Avalanche Energy 1Single Pulse Avalanche Energy 4

UNIT Volts Amps

Volts Watts W/°C °C Amps mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol BV DSS I D(on)R DS(on)I DSS I GSS V GS(th)

UNIT Volts Amps

Ohms μA nA Volts

MIN TYP MAX 100013

0.862501000±100

APT10086BVR

10001352±30±403702.96-55 to 15030013301300

POWER MOS V ?

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035Phone: (541) 382-8028FAX: (541) 388-0364EUROPE

Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord

F-33700 Merignac - France

Phone: (33)557921515

FAX: (33)556479761

APT Website - https://www.wendangku.net/doc/8210647677.html,

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Z θ

J C , T H E R M A L I M P E D A N C E (°C /W )

10-5

10-4

10-310-210-1 1.010RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.4

0.10.05

0.010.005

0.001

DYNAMIC CHARACTERISTICS

APT10086BVFR

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions Continuous Source Current (Body Diode)Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (V GS = 0V, I S = -I D [Cont.])Peak Diode Recovery dv /dt 5Reverse Recovery Time

(I S = -I D [Cont.], di /dt = 100A/μs)Reverse Recovery Charge

(I S = -I D [Cont.], di /dt = 100A/μs)Peak Recovery Current

(I S = -I D [Cont.], di /dt = 100A/μs)

Symbol I S I SM V SD

dv /dt

t rr Q rr I RRM

UNIT Amps Volts V/ns ns μC Amps

Symbol C iss C oss C rss Q g Q gs Q gd t d (on)t r t d (off)t f

Characteristic Input Capacitance Output Capacitance

Reverse Transfer Capacitance Total Gate Charge 3Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time

Turn-off Delay Time Fall Time

Test Conditions

V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 0.5 V DSS I D = I D [Cont.] @ 25°C

V GS = 15V V DD = 0.5 V DSS I D = I D [Cont.] @ 25°C

R G = 1.6?

MIN

TYP

MAX

3700444035049018027018527516249013512241020436510

UNIT pF

ns MIN TYP MAX 13521.35T j = 25°C 200T j = 125°C 350

T j = 25°C 0.7T j = 125°C 1.8T j = 25°C 11T j = 125°C

1Repetitive Rating: Pulse width limited by maximum junction

3See MIL-STD-750 Method 3471

temperature.

4Starting T j = +25°C, L = 15.38mH, R G = 25?, Peak I L

= 13A

2Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%

5I S ≤ -I D [Cont.], di /dt

= 100A/μs, V DD ≤ V DSS , T j ≤ 150°C, R G = 2.0?,V R = 200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol R θJC R θJA

MIN

TYP

MAX

0.3440

UNIT °C/W

Characteristic Junction to Case Junction to Ambient

V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)

I D , DRAIN CURRENT (AMPERES)FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R DS (ON) vs DRAIN CURRENT

T C , CASE TEMPERATURE (°C)

T J , JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE T J , JUNCTION TEMPERATURE (°C)

T C , CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R D S (O N ), D R A I N -T O -S O U R C E O N R E S I S T A N C E I D , D R A I N C U R R E N T (A M P E R E S )

I D , D R A I N C U R R E N T (A M P E R E S )

(N O R M A L I Z E D )

V G S (T H ), T H R E S H O L D V O L T A G E B V D S S , D R A I N -T O -S O U R C E B R E A K D O W N R D S (O N ), D R A I N -T O -S O U R C E O N R E S I S T A N C E

I D , D R A I N C U R R E N T (A M P E R E S )

(N O R M A L I Z E D )

V O L T A G E (N O R M A L I Z E D

)

5075100125150-50

-250255075100125150-50

-250255075100125150APT10086BVFR

1.3

1.2

1.1

1.0

0.9

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.11.00.90.80.70.6

3024

121086420

2.5

2.0

1.5

1.0

0.5

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V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE Q g , TOTAL GATE CHARGE (nC)

V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

V G S , G A T E -T O -S O U R C E V O L T A G E (V O L T S )

I D , D R A I N C U R R E N T (A M P E R E S )

I D R , R E V E R S E D R A I N C U R R E N T (A M P E R E S )

C , C A P A C I T A N C E (p F )

Dimensions in Millimeters and (Inches)

APT10086BVFR

105

1.5

15,00010,0005,000

1,000500

100

50105

1.5

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APT's devices are covered by one or more of the following U.S.patents:4,895,810

5,045,9035,089,4345,182,2345,019,5225,262,3365,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

TO-247 Package Outline