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STP6NK90Z中文资料

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March 2003STP6NK90Z -STP6NK90ZFP

STB6NK90Z

N-CHANNEL 900V -1.56? -5.8A TO-220/TO-220FP/D 2PAK

Zener-Protected SuperMESH?Power MOSFET

s TYPICAL R DS (on)=1.56?

s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED s GATE CHARGE MINIMIZED

s VERY LOW INTRINSIC CAPACITANCES s

VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH?series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH?layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh?products.

APPLICATIONS

s HIGH CURRENT,HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC s LIGHTING

ORDERING INFORMATION

TYPE V DSS R DS(on)I D Pw STP6NK90Z STP6NK90ZFP STB6NK90Z

900V 900V 900V

<2?<2?<2?

5.8A 5.8A 5.8A

140W 30W 140W

SALES TYPE MARKING PACKAGE PACKAGING

STP6NK90Z P6NK90Z TO-220TUBE STP6NK90ZFP P6NK90ZFP TO-220FP TUBE STB6NK90ZT4

B6NK90Z

D 2PAK

TAPE &REEL

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ABSOLUTE MAXIMUM RATINGS

( )Pulse width limited by safe operating area

(1)I SD ≤5.8A,di/dt ≤200A/μs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity.These integrated Zener diodes thus avoid the usage of external components.

Symbol Parameter

Value

Unit STP6NK90Z /STB6NK90Z

STP6NK90ZFP

V DS Drain-source Voltage (V GS =0)900V V DGR Drain-gate Voltage (R GS =20k ?)900V V GS Gate-source Voltage

±30

I D Drain Current (continuous)at T C =25°C 5.8 5.8(*)A I D Drain Current (continuous)at T C =100°C 3.65 3.65(*)A I DM ( )Drain Current (pulsed)23.223.2(*)A P TOT Total Dissipation at T C =25°C 14030W Derating Factor

1.12

0.24

W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K ?)4000V dv/dt (1)Peak Diode Recovery voltage slope 4.5

V/ns Viso Insulation Withstand Voltage (DC)--2500

V T j T stg

Operating Junction Temperature Storage Temperature

-55to 150

°C

TO-220

D 2PAK TO-220FP

Unit Rthj-case Thermal Resistance Junction-case Max 0.89

4.2

°C/W Rthj-pcb Thermal Resistance Junction-pcb Max (When

mounted on minimum Footprint)

60°C/W Rthj-amb

Thermal Resistance Junction-ambient Max 62.5°C/W T l

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol Parameter

Max Value

Unit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)

5.8A E AS

Single Pulse Avalanche Energy

(starting T j =25°C,I D =I AR ,V DD =50V)

300

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit BV GSO

Gate-Source Breakdown Voltage

Igs=±1mA (Open Drain)

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ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1.Pulsed:Pulse duration =300μs,duty cycle 1.5%.

2.Pulse width limited by safe operating area.

3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D =1mA,V GS =0

900

V I DSS Zero Gate Voltage

Drain Current (V GS =0)V DS =Max Rating

V DS =Max Rating,T C =125°C 150μA μA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V

±10μA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =100μA 3

3.75

4.5V R DS(on)

Static Drain-source On Resistance

V GS =10V,I D =2.9A

1.56

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (1)Forward Transconductance V DS =15V ,I D =2.9A

5S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0

135013026pF pF pF C oss eq.(3)

Equivalent Output Capacitance

V GS =0V,V DS =0V to 720V

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V DD =450V,I D =3A R G =4.7?,V GS =10V

(Resistive Load see,Figure 3)1720ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD =720V,I D =5.8A,V GS =10V

46.58.525

nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f Turn-off Delay Time Fall Time

V DD =450V,I D =3A R G =4.7?,V GS =10V

(Resistive Load see,Figure 3)4520ns ns t r(Voff)t f t c

Off-voltage Rise Time Fall Time

Cross-over Time

V DD =720V,I D =5.8A,R G =4.7? , V GS =10V

(Inductive Load see,Figure 5)

111220

ns ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (2)Source-drain Current

Source-drain Current (pulsed) 5.823.2A A V SD (1)Forward On Voltage I SD =5.8A,V GS =0 1.6

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD =5.8A,di/dt =100A/μs V DD =36V,T j =150°C (see test circuit,Figure 5)

840588014

ns nC A

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Maximum Avalanche Energy vs

Temperature

Source-drain Diode Forward

Characteristics

Normalized BVDSS vs Temperature

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Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

Fig.4:Gate Charge test Circuit

Fig.2:Unclamped Inductive Waveform

Fig.1:Unclamped Inductive Load Test

Circuit

Fig.3:Switching Times Test Circuit For Resistive

Load

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TAPE AND REEL

SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D 2PAK FOOTPRINT

*on sales type

DIM.mm inch MIN.

MAX.MIN.

MAX.A 330

12.992

B 1.50.059

C 12.813.20.5040.520

D 20.20795G 24.426.40.960 1.039N 100

3.937

30.4 1.197

BASE QTY BULK QTY 1000

1000REEL MECHANICAL DATA

DIM.mm inch MIN.MAX.MIN.

MAX.

A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.1

0.0750.082R 50 1.574

T 0.250.350.00980.0137

23.7

24.30.9330.956

TAPE MECHANICAL DATA

STP6NK90Z-STP6NK90ZFP-STB6NK90Z

12/12Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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