D44H8中文资料

D44H8D44H11

NPN SILICON POWER TRANSISTORS

s SGS-THOMSON PREFERRED SALESTYPES s

LOW COLLECTOR-EMITTER SATURATION VOLTAGE

s

FAST SWITCHING SPEED

APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER

DESCRIPTION

The D44H8,and D44H11are silicon multiepitaxial planar NPN transistors mounted in Jedec TO-220plastic package.

They are inteded for various switching and general purpose applications.

D44H8,D44H11are complementary with D45H8,D45H11.

INTERNAL SCHEMATIC DIAGRAM

June 1997123

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit D44H8

D44H11V CEO Collector-Emitter Voltage (I B =0)60

80

V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current 10A I CM Collector Peak Current 20A P t ot Total Dissipation at T c ≤25o

C 50W

T stg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150

o

C

1/5

THERMAL DATA

R t hj-ca se Thermal Resistance Junction-case Max 2.5o C/W ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I CBO Collector Cut-off

Current(I E=0)

V CB=rated V CEO10μA

I EBO Emitter Cut-off Current

(I C=0)

V EB=5V100μA

V CEO(sus)?Collector-Emitter

Sustaining Voltage I C=100mA

for D44H8

for D44H11

60

80

V

V

V CE(sat)?Collector-Emitter

Saturation Voltage

I C=8A I B=0.4A1V

V BE(s at)?Base-Emitter

Saturation Voltage

I C=8A I B=0.8A 1.5V

h FE?DC Current Gain I C=2A V CE=1V

I C=4A V CE=1V 60 40

? Pulsed:Pulse duration=300μs,duty cycle≤2%

Safe Operating Area Derating Curves D44H8/D44H11

2/5

DC Current Gain

Collector-Emitter Saturation Voltage DC Current Gain

Base-Emitter Saturation Voltage

D44H8/D44H11

3/5

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

L6

A

C

D

E

D 1

F

G

L7

L2

Dia.

F 1

L5

L4

H 2

L9

F 2

G 1

TO-220MECHANICAL DATA

P011C

D44H8/D44H11

4/5

D44H8/D44H11 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned

in this publication are subject to change without notice.This publicationsupersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.

?1997SGS-THOMSON Microelectronics-Printed in Italy-All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia-Brazil-Canada-China-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A

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