文档库 最新最全的文档下载
当前位置:文档库 › LM709CN-8中文资料

LM709CN-8中文资料

LM709CN-8中文资料
LM709CN-8中文资料

TL H 11477LM709Operational Amplifier

February 1995

LM709

Operational Amplifier

General Description

The LM709series is a monolithic operational amplifier in-tended for general-purpose applications Operation is com-pletely specified over the range of voltages commonly used for these devices The design in addition to providing high gain minimizes both offset voltage and bias currents Fur-ther the class-B output stage gives a large output capability with minimum power drain

External components are used to frequency compensate the amplifier Although the unity-gain compensation network specified will make the amplifier unconditionally stable in all feedback configurations compensation can be tailored to optimize high-frequency performance for any gain setting The LM709C is the commercial-industrial version of the LM709 It is identical to the LM709except that it is specified for operation from 0 C to a 70 C

Connection Diagrams

Metal Can Package

TL H 11477–4

Order Number LM709AH LM709H or LM709CH

See NS Package Number H08C

Dual-In-Line Package

TL H 11477–6

Order Number LM709CN-8See NS Package Number N08E

Dual-In-Line Package

TL H 11477–5

Order Number LM709CN See NS Package Number N14A

C 1995National Semiconductor Corporation RRD-B30M115 Printed in U S A

Absolute Maximum Ratings(Note3)

If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage

LM709 LM709A LM709C g18V Power Dissipation(Note1)

LM709 LM709A300mW LM709C250mW Differential Input Voltage

LM709 LM709A LM709C g5V Input Voltage

LM709 LM709A LM709C g10V Output Short-Circuit Duration(T A e a25 C)

LM709 LM709A LM709C5seconds Storage Temperature Range

LM709 LM709A LM709C b65 C to a150 C Lead Temperature(Soldering 10sec )

LM709 LM709A LM709C300 C Operating Ratings(Note3)

Junction Temperature Range(Note1)

LM709 LM709A b55 C to a150 C LM709C0 C to a100 C Thermal Resistance(i JA)

H Package150 C W (i JC)45 C W 8-Pin N Package134 C W 14-Pin N Package109 C W

Electrical Characteristics(Note2)

Parameter Conditions

LM709A LM709LM709C

Units Min Typ Max Min Typ Max Min Typ Max

Input Offset Voltage T A e25 C R S s10k X0 62 01 05 02 07 5mV

Input Bias Current T A e25 C1002002005003001500nA Input Offset Current T A e25 C105050200100500nA Input Resistance T A e25 C35070015040050250k X Output Resistance T A e25 C150150150X Supply Current T A e25 C V S e g15V2 53 62 65 52 66 6mA

Transient Response V IN e20mV C L s100pF

Risetime T A e25 C1 50 31 00 31 0m s Overshoot3010301030% Slew Rate T A e25 C0 250 250 25V m s Input Offset Voltage R S s10k X3 06 010mV Average Temperature R S e50X T A e25 C to T MAX1 8103 06 0

Coefficient of T A e25 C to T MIN1 8106 012

m V C Input Offset Voltage R S e10k X T A e25 C to T MAX2 015

T A e25 C to T MIN4 825

Large Signal V S e g15V R L t2k X

25702545701545V mV Voltage Gain V OUT e g10V

Output Voltage Swing V S e g15V R L e10k X g12g14g12g14g12g14

V V S e g15V R L e2k X g10g13g10g13g10g13

Input Voltage Range V S e g15V g8g8g10g8g10V

Common-Mode R S s10k X

8011070906590dB Rejection Ratio

Supply Voltage R S s10k X

401002515025200m V V Rejection Ratio

Input Offset Current T A e T MAX3 5502020075400

nA T A e T MIN40250100500125750

Input Bias Current T A e T MIN0 30 60 51 50 362 0m A Input Resistance T A e T MIN851704010050250k X Note1 For operating at elevated temperatures the device must be derated based on a150 C maximum junction temperature for LM709 LM709A and100 C maximum for L709C For operating at elevated temperatures the device must be derated based on thermal resistance i JA T J(MAX)and T A

Note2 These specifications apply for b55 C s T A s a125 C for the LM709 LM709A and0 C s T A s a70 C for the LM709C with the following conditions g9V s V S s g15V C1e5000pF R1e1 5k X C2e200pF and R2e51X

Note3 Absolute Maximum Ratings indicate limits which if exceeded may result in damage Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits For guaranteed specifications and test conditions see the Electrical Characteristics

2

Schematic Diagram

TL H 11477–1 Typical Applications

Unity Gain Inverting Amplifier

TL H 11477–2FET Operational Amplifier

TL H 11477–3

Voltage Follower

TL H 11477–7 To be used with any capacitive loading on output

Pin connections shown are for metal can package

Should be equal to DC source resistance on input

Offset Balancing Circuit

TL H 11477–8 3

Guaranteed Performance Characteristics

Output Voltage Swing Voltage Range

Input Common-Mode Voltage Gain

Supply Current

TL H 11477–9

4

Typical Performance Characteristics

Input Offset Current Input Bias Current Supply Current

Slew Rate as a Function of Closed-Loop Gain Using

Recommended Compensation Networks

Various Closed-Loop Gains Frequency Response for as a Function of Frequency

Output Voltage Swing

Output Voltage Swing

Supply Voltage

as a Function of Input Bias Current TL H 11477–10

5

6

Physical Dimensions inches(millimeters)

Metal Can Package(H)

Order Number LM709AH LM709H or LM709CH

NS Package Number H08C

8-Lead Molded Dual-In-Line Package(N)

Order Number LM709CN-8

NS Package Number N08E

7

L M 709O p e r a t i o n a l A m p l i f i e r

Physical Dimensions inches (millimeters)(Continued)

14-Lead Molded Dual-In-Line Package (N)

Order Number LM709CN NS Package Number N14A

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness

be reasonably expected to result in a significant injury to the user

National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation

Europe

Hong Kong Ltd

Japan Ltd

1111West Bardin Road

Fax (a 49)0-180-5308586

13th Floor Straight Block Tel 81-043-299-2309

相关文档