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N4007二极管

1N4007 Silicon Epitaxial Planar Switching Diode

Features

? SOD-123 package

? Fast switching

N4007二极管

N4007二极管

? These diodes are also available in other case style including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type

designation 1N4007 and the MicroMELF case with the type designation MC1N4007.

Absolute Maximum Ratings (T a = 25 O C)

PINNING

Parameter Symbol Value Unit Peak Reverse Voltage V RM 100 V Reverse Voltage

V R 75 V Average Rectified Forward Current

I F(AV) 150 mA Non-repetitive Peak Forward Surge Current at t = 1 μs I FSM 2 A Power Dissipation

P tot 400 mW

Thermal Resistance from Junction to Ambient Air R θJA 312 O

C/W

Junction Temperature T j 150 O

C Storage Temperature Range

T stg

- 65 to + 150

O

C

Characteristics at T a = 25 O C

Parameter Symbol Min. Max. Unit

Reverse Breakdown Voltage

at I R = 1 μA V (BR)R 75

-

V

Forward Voltage at I F = 1 mA at I F = 10 mA at I F = 50 mA at I F = 150 mA

V F

- - - - 0.715 0.855 1 1.25 V

Peak Reverse Current at V R = 75 V at V R = 20 V

at V R = 75 V, T J = 150 O C at V R = 25 V, T J = 150 O C I R

- - - -

1 25 50 30

μA nA μA μA

Total Capacitance at V R = 0 V, f = 1 MHz

C T - 2 pF Reverse Recovery Time

at I rr = 0.1 X I R , I F = I R = 10 mA, R L = 100 ?

t rr - 4

ns

N4007二极管

N4007二极管

N4007二极管

N4007二极管

P t o t (m W )

103

Forward characteristics

V o

I R (n A )

I F (m A )

Rectification Efficiency Measurement Circuit

102

10

1

10-2

10V F (V)

1000

800

600

400Amissible power dissipation vs. ambient temperature

105

2 1035

2 105

Leakage current vs. junction temperature

200

02

10

5 2

1100

200

Tamb ( C)

100 Tj ( C)

200

N4007二极管

N4007二极管

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads SOD-123

N4007二极管