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SD101CWS-V中文资料

SD101AWS-V/101BWS-V/101CWS-V

Document Number 85680Rev. 1.6, 15-Sep-06

Vishay Semiconductors

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20145

Small Signal Schottky Diodes

Features

?For general purpose applications ?The SD101 series is a Metal-on-silicon

Schottky barrier device which is protected

by a PN junction guard ring

?The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer-ing, biasing and coupling diodes for fast switching and low logic level applications

?These diodes are also available in the Mini-MELF case with type designations LL101A to LL101C, in the DO35 case with type designations SD101A to SD101C and in the SOD123 case with type desig-nations SD101AW-V to SD101CW-V. ?Lead (Pb)-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data

Case: SOD323 Plastic case Weight: approx. 4.3 mg

Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

1) Valid provided that electrodes are kept at ambient temperature

Part

Ordering code

T ype Marking

Remarks SD101AWS-V SD101AWS-V-GS18 or SD101AWS-V-GS08SA Tape and Reel SD101BWS-V SD101BWS-V-GS18 or SD101BWS-V-GS08SB Tape and Reel SD101CWS-V

SD101CWS-V-GS18 or SD101CWS-V-GS08

Tape and Reel

Parameter

T est condition

Part Symbol Value Unit Peak inverse voltage

SD101AWS-V V RRM 60V SD101BWS-V V RRM 50V SD101CWS-V

V RRM 40V Power dissipation (Infinite Heat Sink)P tot 1501)mW Forward continuous current I F 30mA Maximum single cycle surge

10 μs square wave

I FSM

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Document Number 85680

Rev. 1.6, 15-Sep-06

SD101AWS-V/101BWS-V/101CWS-V

Vishay Semiconductors Thermal Characteristics

T amb = 25°C, unless otherwise specified

Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

T amb = 25°C, unless otherwise specified

Typical Characteristics

T amb = 25°C, unless otherwise specified

Parameter

Test condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 6501)K/W Junction temperature T

j 1251)°C Storage temperature range

T stg

- 65 to + 150

°C

Parameter

Test condition

Part Symbol Min T yp.

Max

Unit Reverse breakdown voltage

I R = 10 μA

SD101AWS-V V (BR)60V SD101BWS-V V (BR)50V SD101CWS-V

V (BR)40

V Leakage current

V R = 50 V SD101AWS-V I R 200nA V R = 40 V SD101BWS-V I R 200nA V R = 30 V

SD101CWS-V I R 200nA Forward voltage drop

I F = 1 mA

SD101AWS-V V F 410mV SD101BWS-V V F 400mV SD101CWS-V

V F 390mV I F = 15 mA

SD101AWS-V V F 1000mV SD101BWS-V V F 950mV SD101CWS-V

V F 900mV Junction capacitance

V R = 0 V , f = 1 MHz

SD101AWS-V C D 2.0ns SD101BWS-V C D 2.1ns SD101CWS-V

C D 2.2ns Reverse recovery time

I F = I R = 5 mA, recover to 0.1 I R

t rr

Figure 1. Typical Variation of Forward Current vs. Forward Voltage 0.01

0.1

00.40.60.8 1.00.2I -F o r w a r d C u r r e n t (m A )

F V F - For w ard V oltage (V )18477

Figure 2. Typical Forward Conduction Curve

602080400

100I -F o r w a r d C u r r e n t (m A )

F V F - For w ard V oltage (V )

18478

SD101AWS-V/101BWS-V/101CWS-V

Document Number 85680Rev. 1.6, 15-Sep-06

Vishay Semiconductors

https://www.wendangku.net/doc/8a18486359.html,

Package Dimensions in mm (Inches): SOD323

Figure 3. Typical Variation of Reverse Current at Various

Temperatures 100

0.1

0.01

V R -Re v erse V oltage (V )I -R e v e r s e C u r r e n t (μA )

R 18479

Figure 4. Typical Capacitance Curve as a Function of Reverse

Voltage

18480

102030400

1.01.21.41.61.8

2.00.60.80.20.450

C -T y p i c a l C a p a c i t a n c e (p F )

T V R -Re v erse V oltage (V

)

https://www.wendangku.net/doc/8a18486359.html, 4Document Number 85680

Rev. 1.6, 15-Sep-06

SD101AWS-V/101BWS-V/101CWS-V

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000

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Revision: 18-Jul-08

Disclaimer

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Vishay

All product specifications and data are subject to change without notice.

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