2N5401L-B-T92-K中文资料
UNISONIC TECHNOLOGIES CO., LTD
2N5401
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* Collector-emitter voltage: V
CEO = -150V * High current gain
*Pb-free plating product number:2N5401L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating
Package 1 2 3 Packing
2N5401-x-AB3-R 2N5401L-x-AB3-R SOT-89 B C E Tape Reel 2N5401-x-T92-B 2N5401L-x-T92-B TO-92 E B C Tape Box 2N5401-x-T92-K 2N5401L-x-T92-K TO-92 E B C Bulk
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V CBO -160 V Collector-Emitter Voltage V CEO -150 V Emitter-Base Voltage V EBO -5 V Collector Current I C -600 mA
TO-92 625 mW
Collector Dissipation SOT-89P C
500 mW
Junction Temperature T J +150
Storage Temperature T STG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO Ic = -100μA, I E = 0 -160 V Collector-Emitter Breakdown Voltage BV CEO Ic = -1mA, I B = 0 -150 V Emitter-Base Breakdown Voltage BV EBO I E = -10μA, Ic = 0 -6 V Collector Cut-off Current I CBO V CB = -120V, I E = 0 -50nA Emitter Cut-off Current I EBO
V EB = -3V, Ic = 0 -50nA DC Current Gain(Note)
h FE1 h FE2 h FE3 V CE = -5V, Ic = -1mA V CE = -5V, Ic = -10mA
V CE = -5V, Ic = -50mA
80
80 80 400 Collector-Emitter Saturation Voltage V CE(SAT) Ic = -10mA, I B = -1mA
Ic = -50mA, I B = -5mA
-0.2-0.5V Base-Emitter Saturation Voltage V BE(SAT) Ic = -10mA, I B = -1mA
Ic = -50mA, I B = -5mA
-1 -1 V Current Gain Bandwidth Product f T V CE = -10V, Ic = -10mA
f = 100MHz
100 400MHz
Output Capacitance Cob V CB = -10V, I E = 0, f = 1MHz 6.0pF Noise Figure
NF
Ic = -0.25mA, V CE = -5V
Rs = 1k ?, f = 10Hz ~ 15.7kHz
8 dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF h FE
RANK A B C RANGE 80-170 150-240 200-400
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
Collector Current , Ic (mA)
Capacitance vs. Collector-Base Voltage
Collector-Base Voltage (V)
C a p a c i t a n c e , C o b (p F )
048121620
-100
-101-102
-100-103
-10-1
-101-102
Collector Current vs . Base-Emitter
Voltage C o l l e c t o r C u r r e n t , I c (m A )
Base-Emitter Voltage (V)
0-0.2-0.4-0.6-0.8-1.0
Saturation Voltage vs . Collector Current
Collector Current , Ic (mA)
-10
3
-102
-101
-100
-100-103
-10-1
-101-102
Current Gain-Bandwidth Product
vs. Collector Current
C u r r e n t G a i n -B a n d w i d t h P r o d u c t , f (M H z )
Collector Current, Ic(mA)
103
10
2
101100
-10
-10
3
-10
-1-10
1
-10
2