TVS二极管P6SMB选型手册(规格书)

DSS36二极管规格书(常州星海)

DSS32 THRU DSS310 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 3.0 Ampere Case : JEDEC SOD-123FL molded plastic body Terminals : Plated axial leads, solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.0007 ounce, 0.02 grams FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension DSS32D32SYMBOLS UNITS DSS310 D310 201420V RRM V RMS V DC I (AV)I FSM V F 3.080.0 0.70Operating junction temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C I R 0.5 T J T STG Storage temperature range DSS33D33DSS35D35DSS34D34DSS36D36DSS38D38DSS37D37DSS39 D3******* 40284050355060426080568010070100 704970906390VOLTS VOLTS VOLTS Amp Amps Volts C mA C -65 to +150 -65 to +125 -65 to +150 20.010.00.55 0.850.52SOD-123FL Dimensions in millimeters

BAT54WS贴片肖特基二极管规格书

BAT54WS SCHOTTKY DIODE Case : Molded plastic body Terminals : Plated leads solderable per MIL-STD-750, Method 2026 Polarity : Polarity symbols marked on case Marking : L9 FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 21100200300600200625125 -65 to +150 30 Low forward voltage drop Fast switching time Surface mount package ideally suited for automatic insertion Maximum ratings and electrical characteristics, Single diode @T A =25C SYMBOLS UNITS V R DC Blocking voltage Average rectified output current Forward continuous current Repetitive peak forward current Forward surge current Power dissipation Termal resistance,junction to ambient air Junction temperature Storage temperature Non-Repetitive peak reverse voltage R ΘJA T j T STG LIMITS I FRM Pd A =25C PARAMETER I FSM I FM V RM I O V mA mA mA mA mW K/W C C V SOD-323 Dimensions in millimeters and (inches)

威世二极管规格书

SMBJ5.0 thru SMBJ188CA Vishay General Semiconductor Document Number: 88392For technical questions within your region, please contact one of the following:https://www.wendangku.net/doc/956068383.html, Surface Mount T RANS Z ORB ? Transient Voltage Suppressors FEATURES ?Low profile package ?Ideal for automated placement ?Glass passivated chip junction ? ?cycle): 0.01 % ?Excellent clamping capability ?Very fast response time ?Low incremental surge resistance ?Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ?Solder dip 260 °C, 40 s ?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use C or CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. PRIMARY CHARACTERISTICS V WM 5.0 V to 188 V P PPM 600 W I FSM (uni-directional only) 100 A T J max. 150 °C DO-214AA (SMB J-Bend) Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above T A = 25 °C per Fig. 2(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (Fig. 1) P PPM 600 W Peak pulse current with a 10/1000 μs waveform (1) I PPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I FSM 100 A Operating junction and storage temperature range T J , T STG - 55 to + 150 °C

ES1JL二极管规格书(常州星海)

SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Case : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : Plated axial leads, solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.0007 ounce, 0.02 grams Glass passivated device Ideal for surface mouted applications FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ES1BL SYMBOLS UNITS Metallurgically bonded construction High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension Low reverse leakage 10070100400280400150105150600420600 VOLTS VOLTS VOLTS Amp Amps Volts V RRM V RMS V DC I (AV) I FSM V F 1.0 25.0 1.25 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C I R 5.0100.0A μRatings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. ES1AL THRU ES1JL ES1CL ES1DL ES1EL ES1JL EB EC ED EE EJ EG ES1GL Maximum reverse recovery time (NOTE 1)Typical junction capacitance (NOTE 2) C J pF ELECTRONICS CO.,LTD. STAR SEA Operating junction and storage temperature range Note:R θJA T J ,T STG 8510-55 to +150 C Typical thermal resistance (NOTE 3)K/W 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 3.PCB mounted on 0.2*0.2" (5.0*5.0mm) coppeer pad area. 35ns 503550EA ES1AL trr 200140200 3002103000.95 1.7 SOD-123FL Dimensions in millimeters

发光二极管产品规格书(精)

发光二极管产品规格书 发光二极管产品规格书 型号 : H2B01ARD04 注意谨防静电! 制作核准顾客 Page 1 of 4 Created with novaPDF Printer (https://www.wendangku.net/doc/956068383.html,). Please register to remove this message. H2B01ARD04 文件编号: BF-2005-03-040 产品特征 直径为3mm圆型 高亮红色,低功耗 外观为有色散射 产品应用 各类仪表指示光源 小区域 产品外型图 注: 所有的尺寸单位为毫米(mm),公差为 0.20mm 产品指南 光强Iv(mcd)@20mA 型号发光颜色芯片材料胶体颜色 Min. Typ. Max. 半功率角度 2θ1/2 H2B01ARD04 红色 ALGaAs 有色散射 40 60 --- 60 注: 中心轴亮度50%时单边的发光角度为θ1/2, 2θ1/2=θ1/2+θ1/2 Page 2 of 4 Created with novaPDF Printer (https://www.wendangku.net/doc/956068383.html,). Please register to remove this message. H2B01ARD04 文件编号: BF-2005-03-040 最大限度性能参数(Ta=25℃) 项目符号最大限度单位 功率消耗 PD 80 mW 峰值正向电流 1/10占空比 0.1ms 脉宽 IFP 100 mA 正向电流 IF 20 mA 反向电压 VR 5 V 工作温度 Topr -25℃～+80℃ 储存温度 Tstg -25℃～+100℃ 焊接温度Tsol 260℃下5秒

DSR1M二极管规格书(常州星海)

SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Case : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : S olderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.006 ounce, 0.02 grams Glass passivated device Ideal for surface mouted applications FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension Low reverse leakage Note: 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted ELECTRONICS CO.,LTD. LING JIE STAR SEA Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. DSR1A THRU DSR1M 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 1.Averaged over any 20ms period. DSR1B SYMBOLS 10070100400280400200140200 600420600800560800 V RRM V RMS V DC I (AV) I FSM V F 1.0 25.01.1Operating junction and storage temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at T A =65 C (NOTE 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C Typical junction capacitance (NOTE 2)I R 10.050.0R θJA C J T J ,T STG 1804-55 to +150 Typical thermal resistance (NOTE 3) UNITS VOLTS VOLTS VOLTS Amp Amps Volts pF C A μK/W DSR1D DSR1G DSR1J DSR1K S1B S1D S1G S1J S1K T L =25 C 503550S1A DSR1A 10007001000 DSR1M S1M SOD-123FL Dimensions in millimeters

稳压二极管规格书资料

MMSZ5221BT1 Series Preferred Device Zener Voltage Regulators 500 mW SOD?123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD?123 package. These devices provide a convenient alternative to the leadless 34?package style. Features ?500 mW Rating on FR?4 or FR?5 Board ?Wide Zener Reverse V oltage Range ? 2.4 V to 110 V ?Package Designed for Optimal Automated Board Assembly ?Small Package Size for High Density Applications ?General Purpose, Medium Current ?ESD Rating of Class 3 (>16 kV) per Human Body Model ?Pb?Free Packages are Available Mechanical Characteristics CASE:V oid-free, transfer-molded, thermosetting plastic case FINISH:Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY:Cathode indicated by polarity band FLAMMABILITY RATING:UL 94 V?0 MAXIMUM RATINGS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1.FR?5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2.Thermal Resistance measurement obtained via infrared Scan Method. See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. DEVICE MARKING INFORMATION Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. https://www.wendangku.net/doc/956068383.html,

二极管1N4007规格书

Features 1N4001/L - 1N4007/L 1.0A RECTIFIER “L” Suffix Designates A-405 Package No Suffix Designates DO-41 Package A A B C D DO-41 Plastic A-405Dim Min Max Min Max A 25.40?25.40?B 4.06 5.21 4.10 5.20C 0.710.8640.530.64D 2.00 2.72 2.00 2.70 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ T A = 25°C unless otherwise specified ·Diffused Junction ·High Current Capability and Low Forward Voltage Drop ·Surge Overload Rating to 30A Peak ·Low Reverse Leakage Current · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data ·Case: Molded Plastic ·Terminals: Plated Leads Solderable per MIL-STD-202, Method 208·Polarity: Cathode Band ·Weight: DO-41 0.30 grams (approx) A-405 0.20 grams (approx) ·Mounting Position: Any · Marking: Type Number Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%. Characteristic Symbol 1N 4001/L 1N 4002/L 1N 4003/L 1N 4004/L 1N 4005/L 1N 4006/L 1N 4007/L Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 501002004006008001000V RMS Reverse Voltage V R(RMS) 35 70 140 280420 560 700 V Average Rectified Output Current (Note 1)@ T A = 75°C I O 1.0A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM 30A Forward Voltage @ I F = 1.0A V FM 1.0V Peak Reverse Current @ T A = 25°C at Rated DC Blocking Voltage @ T A = 100°C I RM 5.050 m A Typical Junction Capacitance (Note 2) C j 15 8 pF Typical Thermal Resistance Junction to Ambient R q JA 100K/W Maximum DC Blocking Voltage Temperature T A +150°C Operating and Storage Temperature Range (Note 3) T j,T STG -65 to +175 °C Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.MHz and applied reverse voltage of 4.0V DC. 3. JEDEC Value .

BZX84C5V6贴片二极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V 4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation Maximum Ratings (T a =25℃ unless otherwise specified ) Characteristic Symbol V alue Unit Forward Voltage (Note 2) @ I F = 10mA V F 0.9 V Power Dissipation(Note 1) P d 300 mW Thermal Resistance, Junction to Ambient Air R θJA 417 /℃ W Operating and Storage Temperature Range T j ,T STG -65 ~ +150 ℃

Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, period=5ms,pulse width =300us. 3. f = 1k H Z

SL贴片二极管规格书

B5817W THRU B5819W SCHOTTKY DIODE Case : Molded plastic body Terminals : Plated leads solderable per MIL-STD-750, Method 2026 Polarity : Polarity symbols marked on case Marking : B5817W:SJ, B5818W:SK, B5819W:SL FEATURES MECHANICAL DATA For use in low voltage, high frequency inverters Free wheeling, and polanty protection applications Electrical ratings @T A =25C SYMBOLS Test conditions V (BR) Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance PARAMETER Min.Max. Unit V V V I R =1mA 0.450.750.55 0.8750.60.9 120191.5250500-65 to +150 30 Maximum ratings and electrical characteristics, Single diode @T A =25C SYMBOLS UNITS V RRM V RWM V R Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Average rectified output current Peak forward surge current @=8.3ms Repetitive peak forward current Power dissipation Thermal resistance junction to ambient Storage temperature Non-Repetitive peak reverse voltage T STG V RM V V A A A mW K/W C V B5818W 3021V R(RMS) I O Pd PARAMETER I FSM R ΘJA I R 203040 pF I FRM B5817W B5819W 204014 28 2040 C D V F 1mA V V V V R =4V,f=1.0MHz B5817W B5818W B5819W V R =20V V R =30V V R =40V B5817W B5818W B5819W I F =1A I F =3A B5817W B5818W B5819W SOD-123 Dimensions in millimeters and (inches)

VDZ36B贴片二极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-723 Plastic-Encapsulate Diodes VDZ3.6B-VDZ36B ZENER DIODE SOD-723 FEATURES z Ultra small mold type z High reliability z By chip-mounter ,automatic mounting is possible APPLICATION Voltage regulation Maximum Ratings (T a=25℃ unless otherwise specified) Unit Value Characteristic Symbol Forward Voltage @ I F = 10mA V F 0.9 V Power Dissipation(Note 1) P D 100 mW Thermal Resistance, Junction to Ambient Air RθJA 1250 ℃/W Operating Temperature T j 150 ℃ Storage Temperature T STG-65 ~ +150 Notes: 1. Valid provided that device terminals are kept at ambient temperature.

Electrical Characteristics (T a = 25°C unless otherwise specified) Zener Voltage Range Operating resistance Rising operating resistance Reverse Current V Z @I ZT I Z Z ZK @I Z I Z Z ZT @I Z I Z I R V R Type Number Type Code Min(V) Max(V) mA ? mA ? mA uA V VDZ3.6B 62 3.60 3.845 5.0 100 5.0 1000 1.0 10.0 1.0 VDZ3.9B 72 3.89 4.16 5.0 100 5.0 1000 1.0 5.0 1.0 VDZ4.3B 82 4.17 4.43 5.0 100 5.0 1000 1.0 5.0 1.0 VDZ4.7B 92 4.55 4.75 5.0 100 5.0 800 0.5 2.0 1.0 VDZ5.1B A2 4.98 5.20 5.0 80 5.0 500 0.5 2.0 1.5 VDZ5.6B C2 5.49 5.73 5.0 60 5.0 200 0.5 1.0 2.5 VDZ6.2B E2 6.06 6.33 5.0 60 5.0 100 0.5 1.0 3.0 VDZ6.8B F2 6.65 6.93 5.0 40 5.0 60 0.5 0.5 3.5 VDZ7.5B H2 7.28 7.60 5.0 30 5.0 60 0.5 0.5 4.0 VDZ8.2B J2 8.02 8.36 5.0 30 5.0 60 0.5 0.5 5.0 VDZ9.1B L2 8.85 9.23 5.0 30 5.0 60 0.5 0.5 6.0 VDZ10B 05 9.77 10.21 5.0 30 5.0 60 0.5 0.1 7.0 VDZ11B 15 10.76 11.22 5.0 30 5.0 60 0.5 0.1 8.0 VDZ12B 25 11.74 12.24 5.0 30 5.0 80 0.5 0.1 9.0 VDZ13B 35 12.91 13.49 5.0 37 5.0 80 0.5 0.1 10.0VDZ15B 45 14.34 14.98 5.0 42 5.0 80 0.5 0.1 11.0VDZ16B 55 15.85 16.51 5.0 50 5.0 80 0.5 0.1 12.0VDZ18B 65 17.56 18.35 2.0 65 2.0 80 0.5 0.1 13.0VDZ20B 75 19.52 20.39 2.0 85 2.0 100 0.5 0.1 15.0VDZ22B 85 21.54 22.47 2.0 100 2.0 100 0.5 0.1 17.0VDZ24B 95 23.72 24.78 2.0 120 2.0 120 0.5 0.1 19.0VDZ27B A5 26.19 27.53 2.0 150 2.0 150 0.5 0.1 21.0VDZ30B C5 29.19 30.69 2.0 200 2.0 200 0.5 0.1 23.0VDZ33B E5 32.15 33.79 2.0 250 2.0 250 0.5 0.1 25.0VDZ36B F5 35.07 36.87 2.0 300 2.0 300 0.5 0.1 27.0

DSS24二极管规格书(星海)

DSS22 THRU DSS210 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Ampere Case : JEDEC SOD-123FL molded plastic body Terminals : S olderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.0007 ounce, 0.02 grams FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension DSS22D22SYMBOLS UNITS DSS210 D210 Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 201420V RRM V RMS V DC I (AV)I FSM V F 2.040.0 0.70 Operating junction temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C Typical junction capacitance (NOTE 1)I R 0.5 C J T J T STG 80 Storage temperature range DSS23D23DSS25D25DSS24D24DSS26D26DSS28D28DSS27D27 DSS29D2930 213040284050355060426080568010070100 704970906390VOLTS VOLTS VOLTS Amp Amps Volts pF C mA C -65 to +150 -65 to +125 -65 to +150 10.0 5.0 0.55 0.85220 SOD-123FL Dimensions in millimeters