C67078-S1355-A2中文资料

SIPMOS ?

Power Transistor ? N channel

? Enhancement mode ? Avalanche-rated ? Logic Level ? d v /d t rated ? Low on-resistance

? 175 °C operating temperature ? also in TO-220 SMD available

Pin 1Pin 2Pin 3G

D

S

Type V DS I D R DS(on )Package Ordering Code BUZ 101L

50 V

29 A

0.06 ?

TO-220 AB

C67078-S1355-A2

Maximum Ratings Parameter

Symbol

Values Unit Continuous drain current

T C = 31 °C

I D 29

A

Pulsed drain current

T C = 25 °C

I Dpuls

116

Avalanche energy, single pulse

I D = 29 A, V DD = 25 V, R GS = 25 ?L = 83 μH, T j = 25 °C E AS

70

mJ

Reverse diode d v /d t

I S = 29 A, V DS = 40 V, d i F /d t = 200 A/μs T jmax = 175 °C d v /d t

6

kV/μs

Gate source voltage

V GS ± 14V Gate-source peak voltage,aperiodic V gs ± 20

Power dissipation

T C = 25 °C

P tot

100

W

Maximum Ratings

Parameter Symbol Values Unit Operating temperature T j -55 ... + 175°C Storage temperature T stg -55 ... + 175 Thermal resistance, chip case R thJC ≤ 1.5K/W Thermal resistance, chip to ambient R thJA≤ 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 175 / 56

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Static Characteristics

Drain- source breakdown voltage

V GS = 0 V, I D = 0.25 mA, T j = -40 °C V(BR)DSS

50--

V

Gate threshold voltage V GS=V DS, I D = 1 mA V GS(th)

1.2 1.6 2

Zero gate voltage drain current

V DS = 50 V, V GS = 0 V, T j = 25 °C V DS = 50 V, V GS = 0 V, T j = -40 °C V DS = 50 V, V GS = 0 V, T j = 150 °C I DSS

-

-

-

10

1

0.1

100

100

1μA

nA

μA

Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS

- 10 100

nA

Drain-Source on-resistance V GS = 5 V, I D = 14.5 A R DS(on)

- 0.045 0.06

?

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max. Dynamic Characteristics

Transconductance

V DS≥ 2 *I D * R DS(on)max, I D = 14.5 A g fs

7 17-

S

Input capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C iss

- 720 960

pF

Output capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C oss

- 220 330

Reverse transfer capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C rss

- 100 150

Turn-on delay time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t d(on)

- 25 40

ns

Rise time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t r

- 95 140

Turn-off delay time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t d(off)

- 140 190

Fall time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t f

- 85 115

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max. Reverse Diode

Inverse diode continuous forward current T C = 25 °C I S

-- 29

A

Inverse diode direct current,pulsed T C = 25 °C I SM

-- 116

Inverse diode forward voltage V GS = 0 V, I F = 58 A V SD

- 1.2 2

V

Reverse recovery time

V R = 30 V, I F=l S, d i F/d t = 100 A/μs t rr

- 50-

ns

Reverse recovery charge

V R = 30 V, I F=l S, d i F/d t = 100 A/μs Q rr

- 70-

μC

Drain current I D = ?(T C )

parameter: V GS ≥ 5 V

20406080100120140°C 180

T C

0 2 4 6 8 10 12 14 16 18 20 22 24 26

A 30 I

D

Power dissipation P tot = ?(T C )

20

40

60

80

100120140

°C

180

T C

0 10 20 30 40 50 60 70 80 90 W

110 P tot

Safe operating area I D = ?(V DS )

parameter: D = 0.01, T C = 25°C

10 10 10 10 I D

10

10

10

V V DS Transient thermal impedance Z th JC = ?(t p )

parameter: D = t p / T

10 10 10 10 10 Z thJC

10

10

10

10

10

10

10 10

s t p

Typ. output characteristics I D = ?(V DS )

parameter: t p = 80 μs

V DS

I D

Drain-source on-resistance R DS (on) = ?(T j )

parameter: I D = 14.5 A, V GS = 5 V

-60

-202060100°C 180

T j

R DS (on)

Typ. forward transconductance g fs = f (I D )

parameter: t p = 80 μs,

V DS ≥2 x I D x R DS(on)max

4812162024A 30

I D

2 4 6

8

10 12 14 16 S

20 g fs

Typ. transfer characteristics I D = f (V GS )

parameter: t p = 80 μs V DS ≥2 x I D x R DS(on)max

12345678

V 10

V GS

0 5 10

15

20

25

30

A

40

I D

Typ. drain-source on-resistance R DS (on) = ?(I D )parameter: V GS

10203040A

60

I D

R DS (on)

Gate threshold voltage V GS (th) = ?(T j )

parameter: V GS = V DS , I D = 1 mA

V GS(th)

-60

-20

20

60

100

°C

180

T j

Typ. capacitances

C = f (V DS )

parameter:V GS = 0V, f = 1MHz

51015202530

V 40 V DS

10 10 10 10 C

Forward characteristics of reverse diode

I F = ?(V SD )

parameter: T j , t p = 80 μs

10 10 10 10 I F

0.0

0.40.8 1.2 1.6 2.0 2.4V 3.0

V SD

Avalanche energy E AS = ?(T j )parameter: I D = 29 A, V DD = 25 V R GS = 25 ?, L = 83 μH

20

406080100120140°C 180

T j

0 5 10 15 20 25 30 35 40 45 50 55 60 65

mJ 75 E

AS

Typ. gate charge V GS = ?(Q Gate )

parameter: I D puls = 44 A

5101520253035nC 45

Q Gate

V GS

Drain-source breakdown voltage V (BR)DSS = ?(T j )

-60

-202060100°C 180

T j

47 48 49 50 51 52 53 54 55 56 57 58 59

60

V 62 V (BR)DSS