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MMBZ4683-V中文资料

MMBZ4681-V to MMBZ4717-V

Document Number 85771Rev. 1.5, 04-Jun-08

Vishay Semiconductors

https://www.wendangku.net/doc/9716417282.html,

For technical support, please contact: Diodes-SSP@https://www.wendangku.net/doc/9716417282.html, Small Signal Zener Diodes

Features

?Silicon planar Zener diodes.

?Standard Zener voltage tolerance is ± 5 %.

Other tolerances are available upon request.

?These diodes are also available in DO35 case with the type designation 1N4681...1N4717 and SOD123 case with the type designation MMSZ4681-V...MMSZ4717-V ?Lead (Pb)-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data

Case: SOT23 plastic case Weight: approx. 8.8 mg

Terminals: solderable per MIL-STD-750, method 2026Packaging codes/options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

Note

1) On FR - 5 board using recommended solder pad layout.

Thermal Characteristics

T amb = 25°C, unless otherwise specified

Note 1)

On FR - 5 board using recommended solder pad layout.

Parameter

T est conditions

Symbol

Value

Unit

Zener current (see table "Characteristics")Power dissipation

T A = 25°C

P tot

3501)

Parameter

T est conditions

Symbol Value Unit Thermal resistance junction to ambient air R thJA 4201)K/W Maximum junction temperature T j 150°C Storage temperature range

T stg

- 55 to + 150

°C

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Document Number 85771

Rev. 1.5, 04-Jun-08

MMBZ4681-V to MMBZ4717-V

Vishay Semiconductors For technical support, please contact: Diodes-SSP@https://www.wendangku.net/doc/9716417282.html, Electrical Characteristics

Maximum V F = 0.9 V, at I F = 10 mA

Notes

Tested with pulse test current

2) Maximum voltage change (V Z ). Voltage change is equal to the difference between V Z at 100 μA and V Z

at 10 μA.

Partnumber

Marking code

Zener voltage 1)Max. reverse current

Reverse voltage Max. voltage change V Z at I ZT = 50 μA

I R V R ΔV Z 2)V

μA

V V typ.

min.max.MMBZ4681-V CF 2.4 2.28 2.52 2.0 1.00.80MMBZ4682-V CH 2.7 2.57 2.84 1.0 1.00.85MMBZ4683-V CJ 3.0 2.85 3.150.8 1.00.90MMBZ4684-V CK 3.3 3.14 3.477.5 1.50.95MMBZ4685-V CM 3.6 3.42 3.787.5 2.00.95MMBZ4686-V CN 3.9 3.71 4.10 5.0 2.00.97MMBZ4687-V CP 4.3 4.09 4.52 4.0 2.00.99MMBZ4688-V CT 4.7 4.47 4.9410.0 3.00.99MMBZ4689-V CU 5.1 4.85 5.3610.0 3.00.97MMBZ4690-V CV 5.6 5.32 5.8810.0 4.00.96MMBZ4691-V CA 6.2 5.89 6.5110.0 5.00.95MMBZ4692-V CX 6.8 6.467.1410.0 5.10.90MMBZ4693-V CY 7.57.137.8810.0 5.70.75MMBZ4694-V CZ 8.27.798.61 1.0 6.20.5MMBZ4695-V DC 8.78.279.14 1.0 6.60.1MMBZ4696-V DD 9.18.659.56 1.0 6.90.08MMBZ4697-V DE 10.09.5010.5 1.07.60.1MMBZ4698-V DF 11.010.5011.60.058.40.11MMBZ4699-V DH 12.011.4012.60.059.10.12MMBZ4700-V DJ 13.012.4013.70.059.80.13MMBZ4701-V DK 14.013.3014.70.0510.60.14MMBZ4702-V DM 15.014.3015.80.0511.40.15MMBZ4703-V DN 16.015.2016.80.0512.10.16MMBZ4704-V DP 17.016.2017.90.0512.90.17MMBZ4705-V DT 18.017.1018.90.0513.60.18MMBZ4706-V DU 19.018.1020.00.0514.40.19MMBZ4707-V DV 20.019.0021.00.0115.20.2MMBZ4708-V DA 22.020.9023.10.0116.70.22MMBZ4709-V DZ 24.022.8025.20.0118.20.24MMBZ4710-V DY 25.023.8026.30.0119.00.25MMBZ4711-V EA 27.025.7028.40.0120.40.27MMBZ4712-V EC 28.026.6029.40.0121.20.28MMBZ4713-V ED 30.028.5031.50.0122.80.3MMBZ4714-V EE 33.031.4034.70.0125.00.33MMBZ4715-V EF 36.034.2037.80.0127.30.36MMBZ4716-V EH 39.037.1041.00.0129.60.39MMBZ4717-V

43.0

40.90

45.2

0.01

32.6

0.43

MMBZ4681-V to MMBZ4717-V

Document Number 85771Rev. 1.5, 04-Jun-08

Vishay Semiconductors

https://www.wendangku.net/doc/9716417282.html,

For technical support, please contact: Diodes-SSP@https://www.wendangku.net/doc/9716417282.html, Typical Characteristics

T amb = 25 °C, unless otherwise specified

Figure 1. Total Power Dissipation vs. Ambient Temperature

Figure 2. Typical Change of Working Voltage under Operating

Conditions at T amb = 25 °C

Figure 3. Typical Change of Working Voltage vs.

Junction Temperature

1201600100300400500600P t o t - T o t a l P o w e r D i s s i p a t i o n (m W )

T am b - Am b ient Temperat u re (°C)

20095 9602

2008040

V Z - V o l t a g e C h a n g e (m V )

V Z - Z-V oltage (V )

95 9598

- 60

601201800.80.91.01.11.21.3V Z t n - R e l a t i v e V o l t a g e C h a n g e

T j - J u nction Temperat u re (°C)

95 9599

Figure 4. Temperature Coefficient of V Z vs. Z-Voltage

Figure 5. Diode Capacitance vs. Z-Voltage

Figure 6. Forward Current vs. Forward Voltage

V Z - Z-V oltage (V )

95 9600

4010

200

T K V Z - T e m p e r a t u r e C o e f f i c i e n t o f V Z (10-4/K )

1015

C D - D i o d e C a p a c i t a n c e (p F )

V Z - Z-V oltage (V )

95 9601

0.20.40.60.80.110

10095 9605

I F - F o r w a r d C u r r e n t (m A )

V F - For w ard V oltage (V )

https://www.wendangku.net/doc/9716417282.html, 4

Document Number 85771

Rev. 1.5, 04-Jun-08

MMBZ4681-V to MMBZ4717-V

Vishay Semiconductors

For technical support, please contact: Diodes-SSP@https://www.wendangku.net/doc/9716417282.html, Figure 7. Z-Current vs. Z-Voltage Figure 8. Z-Current vs. Z-Voltage

95 9604

020*********I Z - Z -C u r r e n t (m A )

6V Z - Z-V oltage (V )

2025300

I Z - Z -C u r r e n t (m A )

V Z - Z-

V oltage (V )

95 9607

Figure 9. Differential Z-Resistance vs. Z-Voltage

01015201

1095 9606

V Z - Z-V oltage (V )

r Z - D i f f e r e n t i a l Z -R e s i s t a n c e (Ω)

5Figure 10. Thermal Response

Z t h p - T h e r m a l R e s i s t a n c e f o r P u l s e C o n d . (K W )

t P - P u lse Length (ms)

95 9603

10-1

100

101

102

MMBZ4681-V to MMBZ4717-V

Document Number 85771Rev. 1.5, 04-Jun-08

Vishay Semiconductors

https://www.wendangku.net/doc/9716417282.html,

For technical support, please contact: Diodes-SSP@https://www.wendangku.net/doc/9716417282.html, Package Dimensions in millimeters (inches)

: SOT23

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Document Number 85771

Rev. 1.5, 04-Jun-08

MMBZ4681-V to MMBZ4717-V

Vishay Semiconductors

For technical support, please contact: Diodes-SSP@https://www.wendangku.net/doc/9716417282.html, Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA.

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000

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Revision: 18-Jul-08

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