BUJ205AX中文资料

Philips Semiconductors Objective specification

Silicon Diffused Power Transistor BUJ205AX

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in the plastic full-pack envelope

intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators,motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS TYP.MAX.UNIT V CESM Collector-emitter voltage peak value V BE = 0 V

-850V V CBO Collector-Base voltage (open emitter)-850V V CEO Collector-emitter voltage (open base)-450V I C Collector current (DC)

-8A I CM Collector current peak value -12A P tot Total power dissipation

T mb ≤ 25 ?C

-32W V CEsat Collector-emitter saturation voltage I C = 5.0 A;I B = 1.0 A - 1.5V t f

Fall time

Ic=6A,I B1=1.2A

-300

μs

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOL PARAMETER

CONDITIONS MIN.MAX.UNIT V CESM Collector to emitter voltage

V BE = 0 V

-850V V CEO Collector to emitter voltage (open base)-450V V CBO Collector to base voltage (open emitter)-850V I C Collector current (DC)

-8A I CM Collector current peak value -12A I B Base current (DC)

-4A I BM Base current peak value -6A P tot Total power dissipation T mb ≤ 25 ?C

-32W T stg Storage temperature -65150?C T j

Junction temperature

-150

?C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS

TYP.MAX.UNIT R th j-mb Junction to heatsink with heatsink compound - 3.95K/W R th j-a

Junction to ambient

in free air

60

-K/W

Philips Semiconductors Objective specification

Silicon Diffused Power Transistor BUJ205AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T hs = 25 ?C unless otherwise specified SYMBOL PARAMETER

CONDITIONS

MIN.TYP.

MAX.UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal -2500V three terminals to external waveform;

heatsink

R.H. ≤ 65% ; clean and dustfree

C isol

Capacitance from T2 to external f = 1 MHz -10-pF

heatsink

STATIC CHARACTERISTICS

T mb = 25 ?C unless otherwise specified SYMBOL PARAMETER

CONDITIONS

MIN.TYP.MAX.UNIT I CES Collector cut-off current 1

V BE = 0 V; V CE = V CESMmax --1mA I CES V BE = 0 V; V CE = V CESMmax ;--3mA T j = 125 ?C

I EBO

Emitter cut-off current

V EB = 9 V; I C = 0 A --10mA V CEOsust Collector-emitter sustaining voltage I B = 0 A; I C = 100 mA;450--V L = 25 mH

V CEsat Collector-emitter saturation voltage I C = 5 A; I B = 1.0 A -- 1.5V V BEsat Base-emitter saturation voltage I C = 6 A; I B = 1.2 A -- 1.5V

h FE

DC current gain

I C = 10 mA; V CE = 5 V 10-35I C = 1.0A; V CE = 5 V

10

-35

DYNAMIC CHARACTERISTICS

T mb = 25 ?C unless otherwise specified SYMBOL PARAMETER

CONDITIONS

TYP.MAX.UNIT Switching times (resistive load)I Con = 6.0 A; I Bon = -I Boff = 1.2 A;R L = 75 ohms; V BB2 = 4 V;

t on Turn-on time

- 1.0μs t s Turn-off storage time -4μs t f Turn-off fall time

-0.8

μs

Switching times (inductive load)I Con = 6.0 A; I Bon = 1.2 A; L B = 1 μH;-V BB = 5 V

t s Turn-off storage time - 1.5μs t f Turn-off fall time

-300ns Switching times (inductive load)I Con = 6.0 A; I Bon = 1.2 A; L B = 1 μH;-V BB = 5 V; T j = 100 ?C

t s Turn-off storage time - 2.5μs t f

Turn-off fall time

-

300

ns

1 Measured with half sine-wave voltage (curve tracer).

Philips Semiconductors Objective specification

Silicon Diffused Power Transistor BUJ205AX

MECHANICAL DATA

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205AX

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information

Where application information is given, it is advisory and does not form part of the specification.

? Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.