SI4804
Specification Comparison
Vishay Siliconix
Document Number: 7289322-Mar-04
https://www.wendangku.net/doc/9117650381.html,
1
Si4804BDY vs. Si4804DY
Description:Dual N-Channel, 30-V (D-S) MOSFET Package:SOIC-8Pin Out:Identical
Part Number Replacements:
Si4804BDY Replaces Si4804DY
Si4804BDY—E3 (Lead Free version) Replaces Si4804DY Si4804BDY-T1 Replaces Si4804DY-T1
Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1Summary of Performance:
The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (T A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4804BDY
Si4804DY
Unit
Drain-Source Voltage V DS 3030Gate-Source Voltage V GS "20"20V
T A = 25_C 7.57.5Continuous Drain Current T A = 70_C
I D 66Pulsed Drain Current
I DM 3020 A
Continuous Source Current (MOSFET Diode Conduction)I S 2.3 1.7T A = 25_C 1.7 2.0Power Dissipation
T A = 70_C P D 2.0 1.3 W Operating Junction and Storage Temperature Range T j and T stg ?55 to 150?55 to 150_C Maximum Junction-to-Ambient
R thJA
62.5
62.5
_C/W
SPECIFICATIONS (T J = 25 _C UNLESS OTHERWISE NOTED)
Si4804BDY
Si4804DY
Parameter
Symbol
Min Typ
Max
Min
Typ
Max
Unit
Static
Gate-Threshold Voltage V G(th)0.8
3.00.8
V Gate-Body Leakage
I GSS "100"100nA Zero Gate Voltage Drain Current I DSS 1
1
m A On-State Drain Current V GS = 10 V I D(on)20
20
A Drain Source On Resistance V GS = 10 V D ()0.0170.0220.0180.022Drain-Source On-Resistance V GS = 4.5 V
r Ds(on)0.0240.030
0.0240.030
W Forward Transconductance g fs 1922S Diode Forward Voltage
V SD
0.75
1.20.8
1.2V
Dynamic
Total Gate Charge Qg 711
1320
Gate-Source Charge Qgs 2.92nC
Gate-Drain Charge Qgd 2.5 2.7Gate Resistance
R g
0.5
1.5
2.6NS
W
Switching
t d(on)915816Turn-On Time t r 10171020Turn Off Time t d(off)19302140ns
Turn-Off Time
t f 9151020Source-Drain Reverse Recovery Time
t rr
35
55
40
80
NS denotes parameter not specified in original data sheet.