P0102BL中文资料
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P0102BL
SENSITIVE
0.25A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as stand-by mode power supplies, smoke and alarm detectors...
Available in SOT-23, it provides optimized space saving on high density printed circuit boards.
Symbol Value Unit I T(RMS)0.25A V DRM /V RRM
200V I GT
200
μA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value
Unit I T(RMS)RMS on-state current (180° conduction angle)Tamb = 30°C 0.25A I T(AV)Average on-state current (180° conduction angle)Tamb = 30°C 0.17A I TSM Non repetitive surge peak on-state current
tp = 8.3 ms Tj = 25°C 7A
tp = 10 ms 6I 2t I 2t Value for fusing
tp = 10 ms Tj = 25°C
0.18A 2S dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100ns F = 60 Hz Tj = 125°C 50A/μs I GM Peak gate current
tp = 20 μs
Tj = 125°C 0.5A P G(AV)Average gate power dissipation Tj = 125°C
0.02W T stg Tj
Storage junction temperature range Operating junction temperature range
- 40 to + 150- 40 to + 125
°C
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Symbol Test Conditions
P0102BL Unit I GT V D = 12 V R L = 140 ?
MAX.200μA V GT MAX.0.8V V GD V D = V DRM R L = 3.3 k ? R GK = 1 k ?Tj = 125°C
MIN.0.1V V RG I RG = 10 μA
MIN.8V I H I T = 50 mA R
GK = 1k ?MAX.6mA I L I G = 1 mA R GK = 1k ?MAX.7mA dV/dt V D = 67 % V DRM R GK = 1k ?Tj = 125°C MIN.200V/μs V TM I TM = 0.4 A
tp = 380 μs
Tj = 25°C MAX. 1.7V V t0Threshold voltage Tj = 125°C MAX. 1.0V R d Dynamic resistance Tj = 125°C MAX.1000m ?I DRM I RRM
V DRM = V RRM
Tj = 25°C MAX.
1μA
Tj = 125°C 100
Symbol Parameter
Value Unit R th(j-a)
Junction to ambient (mounted on FR4 with recommended pad layout)
400
°C/W
Part Number
Voltage Sensitivity Package P0102BL
200 V
200 μA
SOT -23
Part Number
Marking Weight Base quantity
Packing mode P0102BL
P2B
0.01 g
3000
Tape & reel
Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus ambient temperature.
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration.Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values).Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
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Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values).
Fig. 8: Surge peak on-state current versus number of cycles.
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I2t.
Fig. 10: On-state characteristics (maximum values).
Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 μm).
PACKAGE MECHANICAL DATA
FOOTPRINT DIMENSIONS (in millimeters)
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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