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2SD882SS-E-AE3-R中文资料

2SD882SS-E-AE3-R中文资料
2SD882SS-E-AE3-R中文资料

UNISONIC TECHNOLOGIES CO., LTD

2SD882SS

NPN SILICON TRANSISTOR

MEDIUM POWER LOW

VOLTAGE TRANSISTOR

FEATURES

* High current output up to 3A * Low saturation voltage * Complement to 2SB772SS

APPLICATIONS

* Audio power amplifier * DC-DC convertor * Voltage regulator

*Pb-free plating product number: 2SD882SSL

ORDERING INFORMATION

Order Number

Pin Assignment

Normal Lead Free Plating

Package 1 2 3 Packing

2SD882SS -x-AE3-R 2SD882SSL-x-AE3-R SOT-23

E B C

Tape Reel

MARKING

Lead Plating

ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 30 V Emitter-Base Voltage V EBO 5 V

DC I C 3 A

Collector Current

Pulse I CP 7

A Base Current I

B 0.6 A

Ta=25 1 W

Collector Dissipation T C =25 P C

10 W Junction Temperature T J +150

Storage Temperature T STG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL

TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C =100μA, I E =0 40 V Collector-Emitter Breakdown Voltage BV CEO I C =1mA, I B =0 30 V Emitter-Base Breakdown Voltage BV EBO I E =100μA, I C =0 5 V Collector Cut-off Current I CBO V CB =30V, I E =0 1000 nA Emitter Cut-off Current I EBO

V EB =3V, I C =0 1000 nA h FE1

V CE =2V, I C =20mA 30 200 DC Current Gain (Note 1)

h FE2

V CE =2V, I C =1A 100 150 400 Collector-Emitter Saturation Voltage V CE(SAT)I C =2A, I B =0.2A 0.3 0.5 V Base-Emitter Saturation Voltage V BE(SAT) I C =2A, I B =0.2A 1.0 2.0 V Current Gain Bandwidth Product f T V CE =5V, I C =0.1A 80 MHz Output Capacitance Cob V CB =10V, I E =0, f=1MHz 45 pF

Note 1: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF h FE2

RANK Q P E

RANGE 100-200 160-320 200-400

TYPICAL CHARACTERISTICS

Static Characteristics

Collector -Emitter voltage (V)

C o l l e c t o r C u r r e n t , I c (A )

00.40.81.21.6Case Temperature , T C (℃)

Derating Curve of Safe Operating

200

15010050

-50

Current Gain-Bandwidth P roduct

C u r r e n t G a i n -B a n d

w i d t h P r o d u c t , F T (M H z )

Collector-Emitter Voltage

Safe Operating Area

Collector Current, Ic (A)

103

102

10110010-2

10-1100101

100

101

102

DC Current Gain

Collector Current, I C (mA)

Collector Current, I C (mA)

Saturation Voltage

D C C u r r e n t G a i n , h F E

101010101010

10

10

10101010

10

TYPICAL CHARACTERISTICS(Cont.)

Collector Output Capacitance

Collector-Base Voltage (V)

O u t p u t C a

p a c i t a n c e (p F )

100

103

10

2

101

100

10-110-210-3

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