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BSC042N03S中文资料

Value

Unit

BSC042N03S

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case R thJC --2K/W

Thermal resistance,R thJA

minimal footprint --62junction - ambient

6 cm 2 cooling area 2)

--45

Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS =0 V, I D =1 mA 30--V

Gate threshold voltage V GS(th)V DS =V GS , I D =50 μA 1.2 1.62Zero gate voltage drain current

I DSS

V DS =30 V, V GS =0 V, T j =25 °C

-0.1

μA V DS =30 V, V GS =0 V, T j =125 °C

-10100Gate-source leakage current I GSS V GS =20 V, V DS =0 V -10100nA Drain-source on-state resistance

R DS(on)

V GS =4.5 V, I D =50 A - 5.2 6.5m ?

V GS =10 V, I D =50 A

- 3.5 4.2Gate resistance R G -0.9-?Transconductance

g fs

|V DS |>2|I D |R DS(on)max , I D =50 A

-S 3)

See figure 3

1)J-STD20 and JESD22

Values 2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

BSC042N03S

Parameter Symbol Conditions Unit

min.typ.max. Dynamic characteristics

Input capacitance C iss-27503660pF Output capacitance C oss-9801300 Reverse transfer capacitance C rss-130195

Turn-on delay time t d(on)- 6.810ns Rise time t r- 5.88.7

Turn-off delay time t d(off)-2741

Fall time t f- 4.6 6.9

Gate Charge Characteristics4)

Gate to source charge Q gs-8.311nC Gate charge at threshold Q g(th)- 4.4 5.9

Gate to drain charge Q gd- 5.38.0 Switching charge Q sw-9.213

Gate charge total Q g-2128

Gate plateau voltage V plateau- 3.0-V

Gate charge total, sync. FET Q g(sync)V DS=0.1 V,

V GS=0 to 5 V

-1925nC

Output charge Q oss V DD=15 V, V GS=0 V-2331 Reverse Diode

Diode continous forward current I S--50A Diode pulse current I S,pulse--200

Diode forward voltage V SD V GS=0 V, I F=50 A,

T j=25 °C

-0.851V

Reverse recovery charge Q rr V R=15 V, I F=I S,

d i F/d t=400 A/μs

--12nC

4) See figure 16 for gate charge parameter definition T C=25 °C

Values

V GS=0 V, V DS=15 V,

f=1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 ?

V DD=15 V, I D=25 A,

V GS=0 to 5 V

BSC042N03S Published by

Infineon Technologies AG

Bereich Kommunikation

St.-Martin-Stra?e 53

D-81541 München

? Infineon Technologies AG 1999

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