当前位置：文档库 › 2SK2480中文资料

2SK2480中文资料

?1995

Document No. D10272EJ1V0DS00 (1st edition)Date Published August 1995 P Printed in Japan

2SK2480

ELECTRICAL CHARACTERISTICS (T A = 25 ?C)

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

V GS = 20 - 0 V

Test Circuit 1 Avalanche Capability

Test Circuit 2 Switching Time

PG.

L DD

t = 1us

Duty Cycle ≤ 1 %

2SK2480

TYPICAL CHARACTERISTICS (T A = 25 ?C)

FORWARD BIAS SAFE OPERATING AREA V DS - Drain to Source Voltage - V I D - D r a i n C u r r e n t - A

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

V DS - Drain to Source Voltage - V

I D - D r a i n C u r r e n t - A

FORWARD TRANSFER CHARACTERISTICS V GS - Gate to Source Voltage - V

I D - D r a i n C u r r e n t - A

0.1

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T C - Case Temperature - ?C d T - P e r c e n t a g e o f R a t e d P o w e r - %

TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

T C - Case Temperature - ?C

P T -

T o t

a l P o w e r D i s s i p a t i o n - W

020406080100120140160

40608010040

100120140160

302520151050.1

100

1.0

100

51015

2SK2480

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

r t h (t ) - T r a n s i e n t T h e r m a l R e s i s t a n c e - ?C /W

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

| y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - S

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - ?

0T ch - Channel Temperature - ?C

V G S (o f f ) - G a t e t o S o u r c e C u t o f f V o l t a g e - V

I D - Drain Current - A

R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - ?

0.001

0.010.1

1001 000 1 m

10 m

100 m

100

1 000

10 μ

1001.0

100

1234678

2SK2480

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

R D S (o n ) -

D r a i n t

o S o u r c e O n -S t a t e R e s i s

t a n c e - ?

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

V SD - Source to Drain Voltage - V

I S D - D i o d e F o r w a r d C u r r e n t - A

V DS - Drain to Source Voltage - V C i s s , C o s s , C r s s - C a p a c i t a n c e - p F

SWITCHING CHARACTERISTICS

I D - Drain Current - A

t d (o n ), t r , t d (o f f ), t f - S w i t c h i n g T i m e - n s

1.00

0.1

100

0.5

1001 000

10 00010

100

1 000

V G S - G a t e t o S o u r c e V o l t a g e - V

REVERSE RECOVERY TIME vs.DRAIN CURRENT

I D - Drain Current - A

t r r - R e v e r s e R e c o v e r y t i m e - n s

di/dt = 50 A/ s V GS = 0

μ100.1

100

1 000

1.010100

1.0

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

Q g - Gate Charge - nC

2468101214160

10 000

SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

L - Inductive Load - H

I A S - S i n g l e A v a l a n c h e C u r r e n t - A

SINGLE AVALANCHE ENERGY DERATING FACTOR

Starting T ch - Starting Channel Temperature - ?C

E n e r g y D e r a t i n g

F a c t o r - %

1.0

100208012016050

100

125

150

V DD = 150 V R G = 25 ?

V GS = 20 V → 0I AS ≤ 3.0 A

1006040140

REFERENCE

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on

a customer designated “quality assurance program“ for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.

Anti-radioactive design is not implemented in this product.

M4 94.11 8