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IRF3706中文资料

Symbol

Parameter

Max.

Units

V DS Drain-Source Voltage

20V

V GS Gate-to-Source Voltage ± 12 V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 77I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 54A I DM Pulsed Drain Current 280P D @T C = 25°C Maximum Power Dissipation 88W P D @T C = 100°C Maximum Power Dissipation 44W Linear Derating Factor 0.59W/°C T J , T STG Junction and Storage Temperature Range -55 to + 175°C

https://www.wendangku.net/doc/a7440380.html, 1

7/5/00

IRF3706IRF3706S SMPS MOSFET

HEXFET ? Power MOSFET

V DSS

R DS(on) max

I D

20V

8.5m ?

77A

Notes through are on page 11

Absolute Maximum Ratings

D 2Pak IRF3706S TO-220AB IRF3706TO-262IRF3706L

Thermal Resistance

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

––– 1.7R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W

R θJA Junction-to-Ambient

–––62R θJA

Junction-to-Ambient (PCB mount)

–––

IRF3706L

Applications

Benefits

Ultra-Low Gate Impedance l Very Low R DS(on) at 4.5V V GS

l Fully Characterized Avalanche Voltage and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification for Telecom and Industrial Use

l High Frequency Buck Converters for Computer Processor Power PD - 93936A

IRF3706/3706S/3706L