SBE002-TL-E;中文规格书,Datasheet资料

Schottky Barrier Diode

Ordering number:ENN6343

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE T okyo Bldg., 1-10, 1 Chome, Ueno, T aito-ku, TOKYO, 110-8534 JAPAN

Specifications

Absolute Maximum Ratings at Ta = 25?C

Package Dimensions

unit:mm Applications

· High frequency rectification (switching regulators,converters, choppers).

Features

· Low forward voltage (V F max=0.55V). · Fast reverse recovery time (t rr max=10ns). · Low switching noise.

· Low leakage current and high reliability due to highly reliable planar structure.

· Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm). · Large allowable power dissipation.

?C ?C

Electrical Characteristics at Ta = 25?C

Mounted on a ceramic board (600mm 2

×0.8mm)

?C/W

Marking : SD

r

e t e m a r a P l o b m y S s

n o i t i d n o C s

g n i t a R t i n U e

g a t l o V e s r e v e R k a e P e v i t i t e p e R V M R R 05V e g a t l o V e g r u S e s r e v e R k a e P e v i t i t e p e r n o N V M S R 55V t n e r r u C t u p t u O e g a r e v A I O 1A t n e r r u C d r a w r o F e g r u S I M S F e

l c y c 1,e v a w e n i s z H 050

1A

e r u t a r e p m e T n o i t c n u J j T 521+o t 55–e

r u t a r e p m e T e g a r o t S g

t s T 5

21+o t 55–r

e t e m a r a P l o b m y S s

n o t i d n o C s

g n i t a R t i n U n i m p

y t x

a m e g a t l o V e s r e v e R V R I R A μ003=0

5V e g a t l o V d r a w r o F V F I F A 1=55.0V t

n e r r u C e s r e v e R I R V R V

52=0

8A μe c n a t i c a p a C l a n i m r e t r e t n I C V R z

H M 1=f ,V 01=2

5F p e m i T y r e v o c e R e s r e v e R t r r I F I =R .t i u c r i C t s e T d e i f i c e p s e e S ,A m 001=0

1s n e

c n a t s i s e R l a m r e h T a

-j h t R 011

分销商库存信息: ONSEMI

SBE002-TL-E