Silicon Pin Diode
This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective TO–92 type plastic package for economical, high–volume consumer and industrial requirements.?Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
?Low Series Resistance @ 100 MHz
R S = 0.7 Ohms (Typ) @ I F = 10 mAdc
?Sturdy TO–92 Style Package for Handling Ease
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Diode Capacitance T A , AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
5040, R E V E R S E C U R R E N T ( A )
1000.01
0.001
I R 0.11.0101.61.20.80.4R S , S E R I E S R E S I S T A N C E (O H M S )
1.41.00.61.830
20100I F , F O R W A R D C U R R E N T (m A )
V R , REVERSE VOLTAGE (VOLTS)C T , D I O D E C A P A C I T A N C E (p F )
μ0.040.004
4.0400.4
PACKAGE DIMENSIONS CASE 182–06ISSUE L
TO–92 (TO–226AC)
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198
2.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED.
4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
PLANE
DIM MIN MAX MIN MAX MILLIMETERS
INCHES A 0.1750.205 4.45 5.21B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.050 BSC 1.27 BSC H 0.100 BSC 2.54 BSC J 0.0140.0160.360.41K 0.500---12.70---L 0.250--- 6.35---N 0.0800.105 2.03 2.66P ---0.050
--- 1.27
R 0.115--- 2.93---V
0.135--- 3.43---
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