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V23990-P320-A-PM中文资料

flow PIM ? 1+S, 1200V, 15A V23990-P320-A-PM

Maximum Ratings / H?chstzul?ssige Werte at Tj=25°C, unless otherwise specified

Parameter

Symbol Value Unit

Input Rectifier Bridge Gleichrichter

Repetitive peak reverse voltage

VRRM

1500V Periodische Rückw. Spitzensperrspannung Forward average current sine TC=80°C IFAV 24A Dauergrenzstrom d=0.5Surge forward current tp=10ms TJ=25°C IFSM 250A Sto?strom Grenzwert I2t-value

tp=10ms TJ=25°C I2t 310A2s Grenzlastintegral

Power dissipation per Diode Tj=150°C

TC=25°C Ptot

87W

Verlustleistung pro Diode

TC=80°C

Transistor Inverter

Transistor Wechselrichter

Collector-emitter break down voltage VCE

1200V Kollektor-Emitter-Sperrspannung DC collector current

Tj=150°C TC=80°C IC 16A Kollektor-Dauergleichstrom

Repetitive peak collector current Tj=150°C TC=80°C Icpuls 32A Periodischer Kollektorspitzenstrom tp=1ms Power dissipation per IGBT Tj=150°C

TC=25°C Ptot 111W Verlustleistung pro IGBT TC=80°C

62Gate-emitter peak voltage

VGE

±20

Gate-Emitter-Spitzenspannung Diode Inverter

Diode Wechselrichter DC forward current Tj=150°C TC=80°C IF 20A Dauergleichstrom

Repetitive peak forward current Tj=150°C TC=80°C IFRM 40A Periodischer Spitzenstrom tp=1ms Power dissipation per Diode Tj=150°C

TC=25°C Ptot

64W

Verlustleistung pro Diode

TC=80°C

BRC Transistor BRC Transistor

Collector-emitter break down voltage VCE

1200V Kollektor-Emitter-Sperrspannung DC collector current

Tj=150°C TC=80°C IC 13A Kollektor-Dauergleichstrom

Repetitive peak collector current Tj=150°C TC=80°C Icpuls 25A Periodischer Kollektorspitzenstrom tp=1ms Power dissipation per IGBT Tj=150°C

TC=25°C Ptot 89W Verlustleistung pro IGBT TC=80°C

50Gate-emitter peak voltage

VGE

±20

Gate-Emitter-Spitzenspannung

Condition

BRC Diode

DC forward current Tj=150°C TC=80°C IF10A Dauergleichstrom

Repetitive peak forward current Tj=150°C TC=80°C IFRM20A Periodischer Spitzenstrom tp=1ms

Power dissipation per Diode Tj=150°C TC=25°C Ptot48W Verlustleistung pro Diode TC=80°C27

Thermal properties

Thermische Eigenschaften

max. Chip temperature Tjmax150°C max. Chiptemperatur

Storage temperature Tstg-40…+125°C Lagertemperatur

Thermal resistance, chip to case Diode Rectifier RthJC1,43K/W W?rmewiderstand Chip-Bodenplatte Transistor Inverter RthJC1,13K/W per chip Diode Inverter RthJC1,94K/W

Transistor BRC RthJC1,4K/W

Diode BRC RthJC2,58K/W Insulation properties

Modulisolation

Insulation test voltage t=1min V is4000Vdc Isolationsspannung

Creepage distance12,7mm Kriechstrecke

Clearance12,7mm Luftstrecke

flow PIM ? 1+S, 1200V, 15A

V23990-P320-_-__

Characteristic values / Charakterische Werte

at T j =25°C, unless otherwise specified

Parameter

Symbol Condition:T R G V GE V CE I F I C Value Unit

(°C)(?)(V)

(V)

(A)

min.

typ.

max.

Input Rectifier Bridge Gleichrichter Forward voltage V F T J =25°C 151,11V Durchla?pannung

Threshold voltage (for power loss calc. only)Vto T J =25°C 150,89V Schleusenspannung

Slope resistance (for power loss calc. only)rt T J =25°C 15

14,68

m ?Ersatzwiderstand Reverse current Ir

V R =V Rmax

T J =25°C

0,02

Sperrstrom

Transistor Inverter, inductive load Transistor Wechselrichter Gate emitter threshold voltage V GE(th)Vge=Vce Tj=25°C 0.00064,505,506,50V Gate-Schwellenspannung

Collector-emitter saturation voltage V CE(sat)T C =25°C 1515

1,80

2,20

2,60V Kollektor-Emitter S?ttigungsspannung

Collector-emitter cut-off current incl. FRED I CES T C =25°C 01200100μA Kollektor-Emitter Reststrom inkl. FRED Gate-emitter leakage current I GES Tj=25°C

300120

nA Gate-Emitter Reststrom Turn-on delay time

t d(on)Rg(on)=Rg(off)T J =25°C 32ns Einschaltverz?gerungszeit T J =125°C 40Rise time t r Rg(on)=Rg(off)T J =25°C 74ns Anstiegszeit

T J =125°C 50Turn-off delay time

t d(off)Rg(on)=Rg(off)T J =25°C 342ns Abschaltverz?gerungszeit T J =125°C 743Fall time t f Rg(on)=Rg(off)T J =25°C 32ns

Fallzeit

T J =125°C 40

Turn-on energy loss per pulse E on Rg(on)=Rg(off)T J =125°C 151********μWs Einschaltverlustenergie pro Puls Turn-off energy loss per pulse E off Rg(on)=Rg(off)T J =125°C 35

1200

465

μWs Abschaltverlustenergie pro Puls SC withstand time t SC @ 10*Ic(max)T J ≤125°C 10μs Kurzschlu?verhalten Input capacitance C ies f=1MHz T J =25°C 1

nF Eingangskapazit?t

Reverse transfer capacitance

C rss

f=1MHz

TJ=25°C

0250,07

Diode Inverter

Diode Wechselrichter Diode forward voltage V F T J =25°C 151,90V Durchla?spannung

Peak reverse recovery current I RM dIF/dt=-380A/μs T J =125°C 1518A Rückstromspitze

Reverse recovery time t rr dIF/dt=-380A/ms

TJ=125°C 15

TBD ns Sperreverz?gerungszeit Reverse recovered charge Q rr

T J =125°C

3,40

μC

Sperrverz?gerungsladung

dif/dt=200 A/μs 351512001200351512003535353535151200353515

Transistor Brake

Transistor Bremse

Gate emitter threshold voltage V GE(th)Vge=Vce Tj=25°C4,505,506,50V Gate-Schwellenspannung

Collector-emitter saturation voltage V CE(sat)T C=25°C15101,902,402,90V Kollektor-Emitter S?ttigungsspannung

Collector-emitter cut-off current incl. FRED I CES T C=25°C0120050,00μA Kollektor-Emitter Reststrom inkl. FRED

Gate-emitter leakage current I GES Tj=25°C300120,00nA Gate-Emitter Reststrom

Turn-on delay time t d(on)Rg(on)=Rg(off)T J=25°C TBD ns Einschaltverz?gerungszeit T J=125°C

Rise time t r Rg(on)=Rg(off)T J=25°C TBD ns Anstiegszeit T J=125°C

Turn-off delay time t d(off)Rg(on)=Rg(off)T J=25°C TBD ns Abschaltverz?gerungszeit T J=125°C

Fall time t f Rg(on)=Rg(off)T J=25°C TBD ns Fallzeit T J=125°C

Turn-on energy loss per pulse E on Rg(on)=Rg(off)T J=125°C TBDμWs Einschaltverlustenergie pro Puls

Turn-off energy loss per pulse E off Rg(on)=Rg(off)T J=125°C TBDμWs Abschaltverlustenergie pro Puls

SC withstand time t SC @ 10*Ic(max)T J≤125°C TBD10μs Kurzschlu?verhalten

Input capacitance C ies f=1MHz T J=25°C TBD nF Eingangskapazit?t

Reverse transfer capacitance C rss f=1MHz TJ=25°C025TBD nF Diode Brake

Diode Bremse

Diode forward voltage V F T J=25°C51,90V Durchla?spannung

Peak reverse recovery current I RM dIF/dt=-200A/μs T J=125°C TBD A Rückstromspitze

Reverse recovery time t rr dIF/dt=-200A/μs TJ=125°C TBD ns Sperreverz?gerungszeit

Reverse recovered charge Q rr T J=125°C TBDμC Sperrverz?gerungsladung dif/dt=200 A/μs

NTC-Thermistor

NTC-Widerstand

Rated resistance R25Tc=25°C22k?Nennwiderstand

Rated resistance R100Tol. ±5%Tc=100°C1486?Nennwiderstand

Power dissipation P Tc=25°C210mW Verlustleistung

B-value B(25/100)Tol. ±3%4000K B-Wert

Shunts

Shuntwiderst?nde

R1-R3 value R Tol. 1%Tc=25°C10m?R1-R3 Wert

Power dissipation P Tc=25°C2W Verlustleistung