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K4S.H.T.B说明书

May. 2011

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Product Guide

Consumer Memory

1. CONSUMER MEMORY ORDERING INFORMATION

3. Product

4. Density & Refresh

5. Organization

6. Bank

7. Interface ( V DD , V DDQ )

9. Package Type

8. Revision

1. SAMSUNG Memory : K

2. DRAM : 4Revision

Bank

Organization

Density & Refresh Product

DRAM SAMSUNG Memory Interface (V DD , V DDQ )

Package Type

Temperature & Power

K 4 X X X X X X X X - X X X X

1 2 3 4 5 6 7 8 9 10 11

Speed

10. Temperature & Power

S :SDRAM

H :DDR SDRAM T :DDR2 SDRAM B

:DDR3 SDRAM

64:64Mb, 4K/64ms 28:128Mb, 4K/64ms 56:256Mb, 8K/64ms 51:512Mb, 8K/64ms 1G :1Gb, 8K/64ms 2G :2Gb, 8K/64ms 4G :4Gb, 8K/64ms

04:x408:x816:x1632:x3231:x32 (2CS)

2:2 Banks 3:4 Banks 4

:8 Banks

2:LVTTL (3.3V, 3.3V)8:SSTL_2 (2.5V, 2.5V)Q :SSTL_18 (1.8V, 1.8V)6

:SSTL_15 (1.5V, 1.5V)

M :1st Gen.H :9th Gen.A :2nd Gen.I :10th Gen.B

:3rd Gen.J :11th Gen.C :4th Gen.K :12th Gen.D :5th Gen.L :13th Gen.E :6th Gen.N :14th Gen.F :7th Gen.O :15th Gen.G

:8th Gen.

:16th Gen.

U :

TSOPII (Lead-free)

100TQFP(Lead-free) only for 128Mb GDDR

:FBGA (Lead-free)

V :144FBGA (Lead-free) only for 128Mb GDDR L :TSOPII (Lead-free & Halogen-free)H :FBGA (Lead-free & Halogen-free)

F :FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR M :FBGA DDP (Lead-free & Halogen-free)B

:FBGA FLIP-CHIP (Lead-free & Halogen-free)

C :Commercial Temp. & Normal Power L :Commercial Temp. & Low Power I :Industrial Temp. & Normal Power P :Industrial Temp. & Low Power D

:Industrial Temp. & Super Low Power

11. Speed

Revision

Bank

Organization

Density & Refresh Product

DRAM SAMSUNG Memory Interface (V DD , V DDQ )

Package Type

Temperature & Power

K 4 X X X X X X X X - X X X X

1 2 3 4 5 6 7 8 9 10 11

Speed

75:7.5ns, PC133 (133MHz CL=3)60:6.0ns (166MHz CL=3)50:5.0ns (200MHz CL=3)40:4.0ns (250MHz CL=3)

B0:DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)B3:DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)CC :DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)E6:DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)E7:DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)F7:DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)F8:DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)H9:DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)K0:DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)MA :DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13)NB :DDR3-2133 (1066MHz @ CL=14, tRCD=14, tRP=14)

2. Commercial Temperature Consumer DRAM Component Product Guide

2.1 SDRAM

2.2 DDR SDRAM

NOTE : 1 . V DD /V DDQ SPEC for 256/512Mb DDR

Density Bank Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)Package Avail.128Mb O-die

4Banks

K4S280832O LC(L)75

16M x 8LVTTL

4K/64ms

3.3±0.3V

54pin TSOP(II)

Now

K4S281632O LC(L)50/C(L)60/C(L)758M x 16256Mb N-die

4Banks

K4S560432N

LC(L)7564M x 4LVTTL

8K/64ms

3.3±0.3V

54pin TSOP(II)

Now

K4S560832N LC(L)7532M x 8K4S561632N

LC(L)60/C(L)75

16M x 16

Density Bank Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)Package Avail.64Mb Q-die 4Banks K4H641638Q LC(L)CC 4M x 16SSTL_24K/64m 2.5±0.2V 66pinTSOPII Now 128Mb O-die

4Banks

K4H281638O LC(L)CC/C(L)B38M x 16SSTL_2

4K/64m

2.5±0.2V *1

66pinTSOPII

Now

256Mb N-die

4Banks

K4H560438N

LC(L)B3/C(L)B0 64M x 4SSTL_2

8K/64m

2.5±0.2V *1

66pinTSOPII

Now

K4H560838N LC(L)CC/C(L)B3 32M x 8K4H561638N LC(L)CC/C(L)B3 16M x 16512Mb J-die 4Banks K4H510438J

LC(L)B3/C(L)B0128M x 4

SSTL_2

8K/64m

2.5±0.2V *1

66pinTSOPII Now

BC(L)CC/C(L)B360ball FBGA

K4H510838J LC(L)CC/C(L)B3 64M x 8

66pinTSOPII BC(L)CC/C(L)B360ball FBGA K4H511638J

LC(L)CC/C(L)B3 32M x 16

66pinTSOPII BC(L)CC/C(L)B3

60ball FBGA

DDR400

DDR333/266V DD /V DDQ

2.6V ± 0.1V

2.5V ± 0.2V

2.3 DDR2 SDRAM

2.4 DDR3 SDRAM

NOTE : 1. DDR3 x8 1866/2133Mbps are ES now 2. DDR3 x16 2133Mbps is ES now

2.5 DDR3+ SDRAM

NOTE : For more details about product specifications or technical files, please contact us "semiconductor@https://www.wendangku.net/doc/a615121245.html,"

Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)Package Avail.128Mb O-die 4Banks K4T28163QO HCF8/E7/F7/E68M x 16SSTL_184K/64m 1.8V±0.1V 84ball FBGA Now 128Mb P-die 4Banks K4T28163QP BCF8/E7/F7/E68M x 16SSTL_184K/64m 1.8V±0.1V 84ball FBGA CS 256Mb N-die 4Banks K4T56163QN HCF8/E7/F7/E616M x 16SSTL_188K/64m 1.8V±0.1V 84ball FBGA Now 256Mb O-die

4Banks

K4T56163QO BCF8/E7/F7/E616M x 16SSTL_18

8K/64m

1.8V±0.1V

84ball FBGA CS

512Mb I-die

4Banks

K4T51043QI

HC(L)E7/F7/E6128M x 4SSTL_18

8K/64m

1.8V±0.1V 60ball FBGA Now

K4T51083QI HC(L)E7/F7/E664M x 8K4T51163QI HC(L)F8/E7/F7/E632M x 1684ball FBGA 512Mb J-die

4Banks

K4T51043QJ

BC(L)E7/F7/E6128M x 4SSTL_18

8K/64m

1.8V±0.1V 60ball FBGA NOW

K4T51083QJ BC(L)E7/F7/E664M x 8K4T51163QJ

BC(L)F8/E7/F7/E632M x 1684ball FBGA

1Gb E-die

8Banks

K4T1G084QE HC(L)F8/E7/F7/E6128M x 8SSTL_18

8K/64m

1.8V±0.1V

60ball FBGA Now K4T1G164QE HC(L)F8/E7/F7/E664M x 1684ball FBGA 1Gb F-die 8Banks K4T1G084QF BC(L)F8/E7/F7/E6128M x 8SSTL_188K/64m 1.8V±0.1V 60ball FBGA Now

K4T1G164QF

BC(L)F8/E7/F7/E6

64M x 16

84ball FBGA

Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)PKG Avail.1Gb E-die

8Banks

K4B1G0846E HC(L)F7/F8/H9/K0128M x 8SSTL_15

8K/64m

1.5V±0.075V

78ball FBGA Now

K4B1G1646E HC(L)F7/F8/H9/K064M x 1696ball FBGA 1Gb G-die 8Banks K4B1G0846G BC(L)F8/H9/K0/MA/NB 1128M x 8SSTL_158K/64m 1.5V±0.075V 78ball FBGA Now

K4B1G1646G BC(L)F8/H9/K0/MA/NB 64M x 1696ball FBGA 2Gb B-die 8Banks K4B2G0846B HC(L)F7/F8/H9/K0256M x 8SSTL_158K/64m 1.5V±0.075V 78ball FBGA Now

K4B2G1646B HC(L)F7/F8/H9/K0128M x 1696ball FBGA 2Gb C-die 8Banks K4B2G0846C HC(L)F8/H9/K0/MA/NB 1256M x 8SSTL_158K/64m 1.5V±0.075V 78ball FBGA Now

K4B2G1646C HC(L)F8/H9/K0/MA/NB 128M x 1696ball FBGA 4Gb D-die

8Banks

K4B4G1646D

MCK0

256M x 16

SSTL_15

8K/64m

1.5V±0.075V

96ball FBGA

Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)PKG Avail.1Gb E-die 8Banks K4B1G1646E HQH964M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 1Gb G-die 8Banks K4B1G1646G BQH964M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 2Gb C-die

8Banks

K4B2G1646C

HQH9

128M x 16

SSTL_15

8K/64m

1.5V±0.075V

96ball FBGA

Now

3. Industrial Temperature Consumer DRAM Component Product Guide

3.1 SDRAM

3.2 DDR SDRAM

NOTE : 1. V DD /V DDQ SPEC for 256/512Mb DDR

3.3 DDR2 SDRAM

3.4 DDR3 SDRAM

Density Bank Part Number Package & Power, Temp. & Speed Org.Interface Refresh Power (V)Package Avail.128Mb O-die 4Banks K4S281632O LI(P)60/I(P)758M x 16LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II)Now 256Mb N-die

4Banks

K4S561632N

LI(P)60/I(P)75

16M x 16

LVTTL

8K/64ms

3.3±0.3V

54pin TSOP(II)

Now

Density Bank Part Number Package & Power, Temp. & Speed Org.Interface Refresh Power (V)Package Avail.512Mb J-die

4Banks

K4H511638J

LI(P)CC/B332M x 16

SSTL_2

8K/64m

2.5±0.2V *1

66pinTSOPII Now

BI(P)CC/B3

60ball FBGA

DDR400

DDR333/266V DD /V DDQ

2.6V ± 0.1V

2.5V ± 0.2V

Density Bank Part Number Package & Power, Temp. & Speed Org.Interface Refresh Power (V)Package Avail.512Mb I-die 4Banks K4T51163QI HI(P)E7/I(P)F7/I(P)E632M x 16SSTL_188K/64m 1.8V±0.1V 84ball FBGA Now K4T51163QI HDE7/E6

512Mb J-die 4Banks K4T51163QJ BI(P)E7/I(P)F7/I(P)E632M x 16SSTL_188K/64m 1.8V±0.1V 84ball FBGA CS 1Gb E-die

8Banks

K4T1G084QE HI(P)F7/I(P)E6128M x 8SSTL_18

8K/64m

1.8V ± 0.1V

60ball FBGA Now

K4T1G164QE HI(P)F7/I(P)E664M x 1684ball FBGA 1Gb F-die 8Banks K4T1G084QF BI(P)F7/I(P)E6128M x 8SSTL_188K/64m 1.8V ± 0.1V 60ball FBGA Now

K4T1G164QF

BI(P)F7/I(P)E6

64M x 16

84ball FBGA

Density Bank Part Number Package & Power, Temp. & Speed Org.Interface Refresh Power (V)Package Avail.1Gb E-die 8Banks K4B1G1646E HI(P)H964M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 1Gb G-die 8Banks K4B1G1646G BI(P)H964M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 2Gb B-die 8Banks K4B2G1646B HI(P)H9128M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 2Gb C-die

8Banks

K4B2G1646C

HI(P)H9

128M x 16

SSTL_15

8K/64m

1.5V±0.075V

96ball FBGA

Now

4. Package Dimension

54Pin TSOP(II) (for SDRAM)

Units : Millimeters

66Pin TSOP(II) (for DDR)

Units : Millimeters

60Ball FBGA (For DDR 512Mb J-die)

60Ball FBGA (For DDR2 512Mb I-die/1Gb E-die x8)Units : Millimeters

84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb I-die/1Gb E-die x16)

Units : Millimeters

60Ball FBGA Flip chip (for DDR2 512Mb J-die / 1Gb F-die x8)

Units : Millimeters

84Ball FBGA Flip chip (for DDR2 128Mb P-die / 256Mb O-die / 512Mb J-die / 1Gb F-die x16)

78Ball FBGA (for DDR3 1Gb E-die x8 / DDR3 2Gb C-die x8)

Units : Millimeters

96all FBGA (for DDR3 1Gb E-die x16 / DDR3+ 1Gb E-die x16 / DDR3 2Gb C-die x16)

Units : Millimeters

78Ball FBGA (for DDR3 2Gb B-die x8)

Units : Millimeters

78Ball FBGA (for DDR3 2Gb B-die x16)

84Ball FBGA (for DDR3 4Gb D-die x16)

Units : Millimeters

0.10M A X

1.10 ± 0.10

#A1

7.50 ± 0.10

13.30 ± 0.10

0.35 ± 0.05TOP VIEW

A B C D

F G H J L M N P R T

7.50 ± 0.10 3.20

0.806.00

(Datum B)(Datum A)

87654321

9 1.60

#A1 INDEX MARK

13.30 ± 0.10 K 0.80 x 15 = 12.00

0.80 x 8 = 6.40

0.80

96 - ?0.45 Solder ball 0.2A B

M (Post Reflow ?0.50 ± 0.05)

BOTTOM VIEW

78Ball FBGA Flip chip (for DDR3 1Gb G-die x8)

Units : Millimeters

96Ball FBGA Flip chip (for DDR3 1Gb G-die x16)

Units : Millimeters

For further information, semiconductor@https://www.wendangku.net/doc/a615121245.html,