TS2N2222A中文资料

TS2N2222A

General Purpose NPN Transistor

BV CEO = 40V Ic = 600mA

V CE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA

Features

Driver stage of AF amplifier .

General purpose switching application Structure

Epitaxial planar type.

Ordering Information

Part No. Packing

Package

TS2N2222ACX RF

3kpcs / Reel SOT-23

Absolute Maximum Rating (Ta = 25 o C unless otherwise noted)

Parameter Symbol Limit Unit

Collector-Base Voltage V CBO 60V V Collector-Emitter Voltage V CEO 40V V Emitter-Base Voltage V EBO

6

V

Collector Current

I C 0.6 A Collector Power Dissipation P D 225 mW

Operating Junction Temperature

T J +150 o C

Operating Junction and Storage Temperature Range T STG - 55 to +150

o

C

Note: 1. Single pulse, Pw = 380uS, Duty <= 2%

Electrical Characteristics

Ta = 25 o C unless otherwise noted

Parameter Conditions Symbol Min Typ Max

Unit

Static

Collector-Base Voltage

I C = 100uA, I E = 0 BV CBO 60 -- -- V Collector-Emitter Breakdown Voltage I C = 1mA, I B = 0 BV CEO 40 -- -- V Emitter-Base Breakdown Voltage I E = 10uA, I C = 0 BV EBO 6 -- -- V Collector Cutoff Current V CB = 20V, I E = 0 I CBO -- -- 0.1 uA Emitter Cutoff Current

V EB = 4V, I C = 0 I EBO -- -- 0.1 uA Collector-Emitter Saturation Voltage I C / I B = 150mA / 15mA V CE(SAT)1-- -- 0.4 V Collector-Emitter Saturation Voltage I C / I B = 500mA / 50mA V CE(SAT)2

-- 0.20 0.75 V DC Current Transfer Ratio V CE = 1V, I C = 0.15A

h FE 100 -- 300

Transition Frequency V CE =10V, I C =20mA, f=100MHz f T -- 250 -- MHz Output Capacitance

V CB = 5V, f=1MHz

Cob

--

--

6.5

pF

Note : pulse test: pulse width <=380uS, duty cycle <=2%

Pin assignment:1. Base 2. Emitter 3. Collector

Electrical Characteristics Curve