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VS4503AS

VS4503AS

Absolute Maximum Ratings

Rating

Symbol Parameter NMOS PMOS Unit

Common Ratings (T C =25°C Unless Otherwise Noted) GS V

Gate-Source Voltage ±30

VS4503AS

±30

VS4503AS

V (BR)DSS V Drain-Source Breakdown Voltage

30 -30 V J T

Maximum Junction Temperature 150 °C STG T Storage Temperature Range -50 to 150 °C S I Diode Continuous Forward Current ① C T =25°C

8 -7.8 A Mounted on Large Heat Sink DM I Pulse Drain Current Tested ② C T =25°C 32 -31.2 A C T =25°C 8 -7.8 D I Continuous Drain Current(VGS=-10V) C T =100°C 4.8 -4.5 A D P Maximum Power Dissipation C T =25°C 2 W θJA R Thermal Resistance Junction-Ambient 62.5 °C/W Features

?N -CH: 30V/8A,R DS(ON)=18m ? ?P -CH: -30V/-7.8A,R DS(ON)=20m ? ?L ow On-Resistance ? 150°C Operating Temperature ?F ast Switching

?L ead-Free, Green Product

Description

VS4503AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.

Pin Description

VS4503AS

Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ T J = 25°C (unless otherwise stated) (BR)DSS V Drain-Source Breakdown Voltage

V GS =0V I D =250μA 30 -- -- V Zero Gate Voltage Drain Current

(Tc=25℃) V DS =30V,V

GS =0V -- -- 1 μA DSS

I Zero Gate Voltage Drain Current

(Tc=125℃)

V DS =30V,V GS =0V -- -- 100 μA GSS I Gate-Body Leakage Current V GS =±20V,V

DS =0V -- -- ±100 nA GS(TH)V Gate Threshold Voltage V DS =V GS ,I D =250μA 1.0 1.5 2.0 V DS(ON)R Drain-Source On-State Resistance

V GS =10V, I D =8A -- 18 22 m ? DS(ON)R Drain-Source On-State Resistance V GS =4.5V, I D =6A -- 25 40 m ?

Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated) iss

C Input Capacitance -- 450

-- pF oss C Output Capacitance -- 69 -- pF rss C Reverse Transfer Capacitance V DS =15V,V GS =0V,

f=1MHz

-- 40 -- pF g

Q Total Gate Charge -- 13

-- nC gs Q GateSource Charge -- 3.6

-- nC gd Q GateDrain Charge V DS =24V,I D =6A,

V GS =4.5V -- 5.0 -- nC Switching Characteristics d(on)t

Turnon Delay Time --

15 -- nS r t Turnon Rise Time -- 19 -- nS d(off)t

TurnOff Delay Time - 30 -- nS f t TurnOff Fall Time V DD =15V,

I D =6A, R G =3.3?, V GS =10V

-- 13 -- nS Source Drain Diode Characteristics SD I

Sourcedrain current(Body Diode) ① T c =25℃ 8 -- -- A SD V Forward on voltage T j =25℃,I SD =8A,

V GS =0V

-- 0.88 1.3 V Notes:

① Pulse test ; Pulse width ≤300μs, duty cycle ≤2%.

VS4503AS

Symbol Parameter

Condition Min Typ Max Unit

Static Electrical Characteristics @ T J = 25°C (unless otherwise stated)

(BR)DSS V Drain-Source Breakdown Voltage V GS =0V I D =-250μA -30

-- -- V Zero Gate Voltage Drain Current (Tc=25℃)

V DS =-30V,V

GS =0V -- -- 1 μA DSS I

Zero Gate Voltage Drain Current (Tc=125℃)

V DS =-30V,V GS =0V -- -- 100 μA GSS I Gate-Body Leakage Current V GS =±20V,V

DS =0V -- -- ±100 nA GS(TH)V Gate Threshold Voltage

V DS =V GS ,I D =-250μA -1.0 -1.5 -2.0 V DS(ON)R Drain-Source On-State Resistance V GS =-10V, I

D =-7.8A -- 20 32 m ? DS(ON)R

Drain-Source On-State Resistance

V GS =-4.5V, I D =-5.8A -- 28 42 m ?

Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise stated)

iss C Input Capacitance -- 638 -- pF oss C Output Capacitance

--

140

--

pF

rss C Reverse Transfer Capacitance V DS =-24V,V GS =0V, f=1MHz

-- 105 -- pF g Q Total Gate Charge --

13

--

nC

gs Q Gate-Source Charge -- 2.1 -- nC gd Q

Gate-Drain Charge

V DS =-24V,I D =-6A, V GS =-4.5V -- 7.2 -- nC

Switching Characteristics

d(on)t Turn-on Delay Time

-- 8.2 -- nS r t Turn-on Rise Time -- 7.3 -- nS d(off)t Turn-Off Delay Time -- 33 -- nS f t

Turn-Off Fall Time

V DD =-15V,

I D =-6A, R G =3.3?, V GS =-4.5V

--

28

-- nS

Source- Drain Diode Characteristics

SD I Source-drain current(Body Diode) T c =25℃ -7.8①

-- A

SD V

Forward on voltage

T j =25℃,I SD =-7.8A V GS =0V

-- -0.88 -1.3 V

Notes:

① Pulse test ; Pulse width ≤300μs, duty cycle ≤2%.

VS4503AS

VS4503AS

VS4503AS

V DS , Drain -Source Voltage (V)

Fig1. Typical Output Characteristics

Tj , Junction Temperature (°C)

Fig2. Power Dissipation

V GS , Gate -Source Voltage (V)

Fig3. Typical Transfer Characteristics

Tj , Junction Temperature (°C)

Fig4. Normalized On-Resistance Vs. Temperature

V DS , Drain -Source Voltage (V)

Square Wave Pulse Duration (sec) I D , D r a i n -S o u r c e C u r r e n t (A )

N o r m a l i z e d O n R e s i s t a n c e

I D , D r a i n C u r r e n t (A )

I D , D r a i n C u r r e n t (A )

I D ,D r a i n -S o u r

VS4503AS

c e

VS4503AS

C

VS4503AS

u r r e n t (A )

P t o t -P o w e r (W )

VS4503AS

VS4503AS

VS4503AS

VS4503AS

VS4503AS

V SD , Source-Drain Voltage (V)

Fig7. Typical Source-Drain Diode Forward Voltage

Qg ,Total Gate Charge (nC)

Fig8. Typical Gate Charge Vs.Gate-Source Voltage

Tj , Junction Temperature (°C)

Fig9. Threshold Voltage Vs. Temperature

V DS , Drain-Source Voltage (V)

Fig10. Typical Capacitance Vs.Drain-Source Voltage

V G S , G a t e -S o u r c e V o l t a g e (V )

I S D , R e v e r s e D r a i n C u r r e n t (A )

N o r m a l i z e d V G S (T H ), G a t e -S o u r c e V

VS4503AS

o l t a g e

C , C a p a c i t a n c e (p F )

Fig11. Switching Time Test Circuit and waveforms

VS4503AS

VS4503AS

-V DS , -Drain -Source Voltage (V)

Fig1. Typical Output Characteristics Tj , Junction Temperature (°C)

Fig2. Power Dissipation

-V GS , -Gate -Source Voltage (V)

Fig3. Typical Transfer Characteristics

Tj , Junction Temperature (°C)

Fig4. Normalized On-Resistance Vs. Temperature

-V DS , -Drain -Source Voltage (V)

Square Wave Pulse Duration (sec) -I D , -D r a i n -S o u r c e C u r r e n t (A )

N o r m a l i z e d O n R e s i s t a n c e

-I D , -D r a i n C u r r e n t (A )

-I D , -D r a i n C u r r e n t (A )

-I D , -D r a i n -S o u r c

VS4503AS

e

VS4503AS

C u r r e n t (A )

P t o t -P o w e r (W )

VS4503AS

VS4503AS

VS4503AS

VS4503AS

VS4503AS

-V SD , -Source-Drain Voltage (V)

Fig7. Typical Source-Drain Diode Forward Voltage

Qg -Total Gate Charge (nC)

Fig8. Typical Gate Charge Vs.Gate-Source Voltage

Tj , Junction Temperature (°C)

Fig9. Threshold Voltage Vs. Temperature

-V DS , -Drain-Source Voltage (V)

Fig10. Typical Capacitance Vs.Drain-Source Voltage

-V G S , G a t e -S o u r c e V o l t a g e (V )

-I S D , -R e v e r s e D r a i n C u r r e n t (A )

-V G S (T H ), G a t e -S o u r c e V o l t a

VS4503AS

g e (V )

C , C a p a c i t a n c e (p F )

Fig11. Switching Time Test Circuit and waveforms

P-Channel Typical Characteristics

VS4503AS

SOP8 Mechanical Data

VS4503AS

Order Information

Product

Marking

Package

Packaging Min Unit Quantity

VS4503AS VS4503AS SOP8

3000/Reel

6000

Customer Service

Sales and Service:

Sales@http://www.wendangku.net/doc/af517084524de518964b7df4.html

Shen Zhen Vangaurd Semiconductor CO., LTD

TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: http://www.wendangku.net/doc/af517084524de518964b7df4.html

Dimensions In Millimeters Symbol

Min

Nom Max

A 4.800

4.900

5.000 A1 0.356

0.406 0.456 A2 1.270Typ. A3 0.345Typ.

B 3.800

3.900

4.000 B1

5.800

6.000 6.200 B2 5.00Typ.

C 1.300

1.400 1.500 C1 0.550

0.600 0.650 C2 0.550

0.600 0.650 C3 0.050 -- 0.200 C4 0.203Typ. D 1.050Typ.

D1 0.400

0.500 0.600 R1 0.200Typ. R2 0.200Typ. Θ1 17°Typ. Θ2 13°Typ. Θ3 0°~ 8°Typ. Θ4 4°~ 12°Typ.

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