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TN1215-600H中文资料

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Table 1: Main Features

DESCRIPTION

Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits,capacitive discharge ignition and voltage regulation circuits...

Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.

Symbol Value Unit I T(RMS)12A V DRM /V RRM

600 to 1000V I GT

0.2 to 15

TN12, TS12 and TYNx12 Series

12A SCR S

REV. 5October 2005SENSITIVE & STANDARD

Table 2: Order Codes

Part Numbers Marking TN1215-x00B TN1215x00TN1215-x00B-TR TN1215x00TN1215-x00G TN1215x00G TN1215-x00G-TR TN1215x00G TN1215-x00H TN1215x00TS1220-x00B TS1220x00TS1220-x00B-TR TS1220x00TS1220-x00H TS1220x00TYNx12RG TYNx12TYNx12TRG

TYNx12T

TN12, TS12 and TYNx12 Series

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Table 3: Absolute Ratings (limiting values)

Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)

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SENSITIVE

Symbol

Parameter

Value

Unit

TN12-G TYN12

TN12-B/H TS12-B/H I T(RMS) RMS on-state current (180° conduction angle)T c = 105°C 12A IT (AV) Average on-state current (180° conduction angle)

T c = 105°C 8

I TSM Non repetitive surge peak on-state current t p = 8.3 ms T j = 25°C 145115A t p = 10 ms 140110I 2t I 2t Value for fusing

t p = 10 ms

T j = 25°C 98

A 2S dI/dt Critical rate of rise of on-state

current I G = 2 x I GT , t r ≤ 100 ns F = 60 Hz T j = 125°C 50A/μs I GM Peak gate current

t p = 20 μs

T j = 125°C 4A P G(AV)Average gate power dissipation T j = 125°C

1W T stg T j Storage junction temperature range Operating junction temperature range

- 40 to + 150- 40 to + 125

°C V RGM

Maximum peak reverse gate voltage (for TN12 & TYN12 only)

V Symbol

Test Conditions

TS1220Unit I GT V D = 12 V R L = 140 ?

MAX.200μA V GT MAX.0.8V V GD V D = V DRM R L = 3.3 k ? R GK = 1 k ?T j = 125°C

MIN.0.1V V RG I RG = 10 μA

MIN.8V I H I T = 50 mA R GK = 1 k ?MAX.5mA I L I G = 1 mA R GK = 1 k ?MAX.6mA dV/dt V D = 65 % V DRM R GK = 220 ?T j = 125°C MIN.5V/μs V TM I TM = 24 A tp = 380 μs T j = 25°C MAX. 1.6V V t0Threshold voltage T j = 125°C MAX.0.85V R d Dynamic resistance T j = 125°C MAX.30m ?I DRM I RRM

V DRM = V RRM

R GK = 220 ?

T j = 25°C MAX.

5μA T j = 125°C 2

TN12, TS12 and TYNx12 Series

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STANDARD

Table 6: Thermal resistance Symbol Test Conditions

TN1215TYN Unit B / H

x12T

x12I GT V D = 12 V R L = 33 ?MIN.

20.52mA MAX.15

515

V GT MAX. 1.3V V GD V D = V DRM R L = 3.3 k ?T j = 125°C

MIN.0.2

V I H I T = 500 mA Gate open MAX.40301530mA

I L I G = 1.2 I GT

MAX.80603060mA dV/dt V D = 67 % V DRM Gate open T j =125°C MIN.200

200

V/μs V TM I TM = 24 A t p

= 380 μs T j = 25°C MAX. 1.6V V t0Threshold voltage T j = 125°C MAX.0.85V R d Dynamic resistance T j = 125°C MAX.30m ?I DRM I RRM

V DRM = V RRM

T j = 25°C MAX.

5μA T j = 125°C 2mA

Symbol Parameter Value Unit R th(j-c)

Junction to case (DC)

1.3°C/W

R th(j-a)

Junction to ambient (DC)

S = 0.5 cm 2

DPAK 70°C/W

S = 1 cm 2

D 2PAK 45IPAK 100TO-220AB

S = Copper surface under tab.

Figure 1: Maximum average power dissipation versus average on-state current

Figure 2: Average and D.C. on-state current versus case temperature

TN12, TS12 and TYNx12 Series

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Figure 3: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK)

Figure 4: Relative variation of thermal impedance junction to case versus pulse duration

Figure 5: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK)

Figure 6: Relative variation of gate trigger current and holding current versus junction temperature for TS8 series

Figure 7: Relative variation of gate trigger current and holding current versus junction temperature for TN8 & TYN08 series

Figure 8: Relative variation of holding current versus gate-cathode resistance (typical values) for TS8 series

TN12, TS12 and TYNx12 Series

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Figure 9: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS8 series

Figure 10: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS8 series

Figure 11: Surge peak on-state current versus number of cycles

Figure 12: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding values of I2t

Figure 13: On-state characteristics (maximum values)

Figure 14: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, copper thickness: 35μm) (DPAK and D 2PAK)

TN12, TS12 and TYNx12 Series

Figure 15: Ordering Information Scheme (TN8 series)

Figure 16: Ordering Information Scheme (TS8 series)

Figure 17: Ordering Information Scheme (TYN08 series)

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TN12, TS12 and TYNx12 Series

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Table 7: Product Selector Figure 18: DPAK Package Mechanical Data

Figure 19: DPAK Foot Print Dimensions

(in millimeters)

Part Numbers Voltage (xxx)

Sensitivity Package 600 V 700 V

800 V 1000 V

TN1215-xxxB X X 15 mA DPAK TN1215-xxxG X X X 15 mA D 2PAK TN1215-xxxH X X

15 mA IPAK TS1220-xxxB X X 0.2 mA DPAK TS1220-xxxH X X

0.2 mA IPAK TYNx12X X X 15 mA TO-220AB TYNx12T

5 mA

TO-220AB

TN12, TS12 and TYNx12 Series

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Figure 20: D 2PAK Package Mechanical Data

Figure 21: D

PAK Foot Print Dimensions (in millimeters)

TN12, TS12 and TYNx12 Series Figure 22: IPAK Package Mechanical Data

Figure 23: TO-220AB Package Mechanical Data

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TN12, TS12 and TYNx12 Series

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In order to meet environmental requirements, ST offers these devices in ECOPACK? packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: https://www.wendangku.net/doc/a518624280.html,.Table 8: Ordering Information

Ordering type Marking Package Weight Base qty

Delivery mode

TN1215-x00B TN1215x00DPAK 0.3 g 75Tube TN1215-x00B-TR TN1215x00DPAK 0.3 g 2500Tape & reel TN1215-x00G TN1215x00G D 2PAK 1.5 g 50Tube TN1215-x00G-TR TN1215x00G D 2PAK 1.5 g 1000Tape & reel TN1215-x00H TN1215x00IPAK 0.3 g 75Tube TS1220-x00B TS1220x00DPAK 0.3 g 75Tube TS1220-x00B-TR TS1220x00DPAK 0.3 g 2500Tape & reel TS1220-x00H TS1220x00IPAK 0.3 g 75Tube TYNx12RG TYNx12TO-220AB 2.3 g 50Tube TYNx12TRG

TYNx12T

TO-220AB

2.3 g

Tube

Note: x = voltage

Table 9: Revision History

Date Revision

Description of Changes

Sep-20003Last update.

25-Mar-20054TO-220AB delivery mode changed from bulk to tube.14-Oct-2005

Changed sensitivity values in Table 7 for TYNx12 (30 to 15 mA) and TYNx12T ( 15 to 5 mA). Added ECOPACK statement

TN12, TS12 and TYNx12 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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All other names are the property of their respective owners

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