HT30,HT33,HT50三极管芯片规格书

常见大中功率管三极管参数(精)

常见大中功率管三极管参数 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1402 1500V 5A 120W * * NPN 2SD1399 1500V 6A 60W * * NPN 2SD1344 1500V 6A 50W * * NPN 2SD1343 1500V 6A 50W * * NPN 2SD1342 1500V 5A 50W * * NPN 2SD1941 1500V 6A 50W * * NPN 2SD1911 1500V 5A 50W * * NPN 2SD1341 1500V 5A 50W * * NPN 2SD1219 1500V 3A 65W * * NPN 2SD1290 1500V 3A 50W * * NPN 2SD1175 1500V 5A 100W * * NPN 2SD1174 1500V 5A 85W * * NPN 2SD1173 1500V 5A 70W * * NPN 2SD1172 1500V 5A 65W * * NPN 2SD1143 1500V 5A 65W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD1142 1500V 3.5A 50W * * NPN 2SD1016 1500V 7A 50W * * NPN 2SD995 2500V 3A 50W * * NPN 2SD994 1500V 8A 50W * * NPN 2SD957A 1500V 6A 50W * * NPN 2SD954 1500V 5A 95W * * NPN 2SD952 1500V 3A 70W * * NPN 2SD904 1500V 7A 60W * * NPN 2SD903 1500V 7A 50W * * NPN 2SD871 1500V 6A 50W * * NPN 2SD870 1500V 5A 50W * * NPN 2SD869 1500V 3.5A 50W * * NPN 2SD838 2500V 3A 50W * * NPN 2SD822 1500V 7A 50W * * NPN 2SD821 1500V 6A 50W * * NPN 晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SD348 1500V 7A 50W * * NPN 2SC4303A 1500V 6A 80W * * NPN 2SC4292 1500V 6A 100W * * NPN 2SC4291 1500V 5A 100W * * NPN 2SC4199A 1500V 10A 100W * * NPN 2SC3883 1500V 5A 50W * * NPN 2SC3729 1500V 5A 50W * * NPN 2SC3688 1500V 10A 150W * * NPN

2SC2983三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) FEATURES z High Transition Frequency MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E =0 160 V Collector-emitter breakdown voltage V (BR)CEO * I C =10mA,I B = 0 160 V Emitter-base breakdown voltage V (BR)EBO I E =1mA,I C = 0 5 V Collector cut-off current I CBO V CB =160V,I E = 0 1 μA Emitter cut-off current I EBO V EB =5V,I C = 0 1 μA DC current gain h FE V CE =5V, I C = 100mA 70 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1.5 V Base-emitter voltage V BE V CE =5V, I C = 500mA 1 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 25 pF Transition frequency f T V CE =10V,I C =100mA, 100 MHz *Pulse test CLASSIFICATION OF h FE RANK O Y RANGE 70-140 120-240 Symbol Parameter Value Unit V CBO Collector-Base Voltage 160 V V CEO Collector-Emitter Voltage 160 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1.5 A P C Collector Power Dissipation 1 W R θJA Thermal Resistance From Junction To Ambient 125 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ B,Aug,2012 https://www.wendangku.net/doc/b116823984.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

MEMORY存储芯片STM32F103C8T6中文规格书

Features ?ARM? 32-bit Cortex?-M3 CPU Core –72 MHz maximum frequency, 1.25 DMIPS/MHz (Dhrystone 2.1) performance at 0 wait state memory access –Single-cycle multiplication and hardware division ?Memories –64 or 128 Kbytes of Flash memory –20 Kbytes of SRAM ?Clock, reset and supply management – 2.0 to 3.6 V application supply and I/Os –POR, PDR, and programmable voltage detector (PVD) –4-to-16 MHz crystal oscillator –Internal 8 MHz factory-trimmed RC –Internal 40 kHz RC –PLL for CPU clock –32 kHz oscillator for RTC with calibration ?Low-power –Sleep, Stop and Standby modes –V BAT supply for RTC and backup registers ? 2 x 12-bit, 1 μs A/D converters (up to 16 channels) –Conversion range: 0 to 3.6 V –Dual-sample and hold capability –Temperature sensor ?DMA –7-channel DMA controller –Peripherals supported: timers, ADC, SPIs, I2Cs and USARTs ?Up to 80 fast I/O ports –26/37/51/80 I/Os, all mappable on 16 external interrupt vectors and almost all 5 V-tolerant ?Debug mode –Serial wire debug (SWD) & JTAG interfaces ?7 timers –Three 16-bit timers, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input –16-bit, motor control PWM timer with dead-time generation and emergency stop – 2 watchdog timers (Independent and Window) –SysTick timer 24-bit downcounter ?Up to 9 communication interfaces –Up to 2 x I2C interfaces (SMBus/PMBus) –Up to 3 USARTs (ISO 7816 interface, LIN, IrDA capability, modem control) –Up to 2 SPIs (18 Mbit/s) –CAN interface (2.0B Active) –USB 2.0 full-speed interface ?CRC calculation unit, 96-bit unique ID ?Packages are ECOPACK? Table 1. Device summary Reference Part number STM32F103x8 STM32F103C8, STM32F103R8 STM32F103V8, STM32F103T8 STM32F103xB STM32F103RB STM32F103VB, STM32F103CB, STM32F103TB 找Memory、FPGA、二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、滤波器， 上深圳市美光存储技术有限公司 August 2015

大功率三极管参数..

大功率三极管参数 MJ15024 | NPN | 250V | 16A | 250 W MJ15025 | PNP | 250V | 16A |250 W E13005-2是“高速/高压开关管” 参数：硅、NPN、700V/400V 、8A 、75W 、β≥10 三极管参数大全 BU2525AF NPN 30 开关功放1500V12A150W /350NS BU2525AX NPN 30 开关功放1500V12A150W /350NS BU2527AF NPN 30 开关功放1500V15A150W BU2532AW NPN 30 开关功放1500V15A150W(大屏) BUH515 NPN BCE 行管1500V10A80W BUH515D NPN BCE 行管1500V10A80W(带阻尼) BUS13A NPN 12 开关功放1000V15A175W BUS14A NPN 12 开关功放1000V30A250W BUT11A NPN 28 开关功放1000V5A100W BUT12A NPN 28 开关功放450V10A125W BUV26 NPN 28 音频功放开关90V14A65W /250ns BUV28A NPN 28 音频功放开关225V10A65W /250ns BUV48A NPN 30 音频功放开关450V15A150W BUW13A NPN 30 功放开关1000V15A150W BUX48 NPN 12 功放开关850V15A125W BUX84 NPN 30 功放开关800V2A40W BUX98A NPN 12 功放开关400V30A210W5MHZ DTA114 PNP 10K-10K 160V0.6A0.625W(带阻) DTC143 NPN 录像机用4.7K-4.7K HPA100 NPN BCE 大屏彩显行管21# HPA150 NPN BCE 大屏彩显行管21# HSE830 PNP BCE 音频功放80V115W1MHZ HSE838 NPN BCE 音频功放80V115W1MHZ COP/MJ4502 MN650 NPN BCE 行管1500V6A80W MJ802 NPN 12 音频功放开关90V30A200W MJ2955 PNP 12 音频功放开关60V15A115W MJ3055 NPN 12 音频功放开关60V15A115W MJ4502 PNP 12 音频功放开关90V30A200W COP/MJ802 MJ10012 NPN 12 达林顿400V10A175W MJ10015 NPN 12 电源开关400V50A200W

3904 3906三极管说明

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors NST3946 General purpose transistors (dual transistors) DESCRIPTION It is designed for general purpose amplifier applications . By putting two mount applications where board space is at a premium. z Low V CE(sat) z Simplifies Circuit Design z Reduces Board Space z Reduces Component Count Marking: 46 Equivalent circuit 1

CBO V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -200 mA P C Collector Power Dissipation 150 mW R θJA Thermal Resistance from Junction to Ambient 833 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C = 0 -5 V Collector cut-off current I CBO V CB =-30V, I E = 0 -0.05 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.05μA V CE =-1V, I C = -0.1mA 60 V CE =-1V, I C = -1mA 80 V CE =-1V, I C = -10mA 100 300 V CE =-1V, I C = -50mA 60 DC current gain h FE V CE =-1V, I C = -100mA 30 I C =-10mA, I B =-1mA -0.25V Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.4 V I C =-10mA, I B =-1mA -0.65 -0.85 V Base-emitter saturation voltage V BE(sat) I C =-50mA, I B =-5mA -0.95V Transition frequency f T V CE =-20V, I C =-10mA, f=100MHz 250 MHz Output capacitance C ob V CB =-5V, I E =0, f=1MHz 4.5 pF

DSK32 SOD-123FL系列规格书推荐

DSK32 THRU DSK310SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -3.0 Ampere 1of 2

RATINGS AND CHARACTERISTIC CURVES DSK32 THRU DSK310 FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD FIG. 1- FORWARD CURRENT DERATING CURVE A V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E S I N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E S P E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E S INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 10 1 0.1 0.010.001 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS I N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L I A M P E R E S AMBIENT TEMPERATURE, C 2of 2

常用贴片三极管主要参数及丝印

常用贴片三极管主要参数(SOT-23) 序号型号 TYPE 极性 POLA RITY P D (mW) I C (mA) BV CBO (V) BV CEO (V) h FE V CE(sat)I C/I B f TYPE (MHZ) 打标 Marking Min/Max I C mA V CE Volts Max Volts mA 1S9012PNP3005004025120/3505010.6500501502T1 2S9013NPN3005004025120/3505010.650050150J3 3S9014NPN2001005045200/1000150.31005150J6 4S9015PNP2001005045200/1000150.310010150M6 5S9018NPN20050251870/190 1.O50.51001600J8 6S8050NPN3005004025120/3505010.650050150J3Y 7S8550PNP3005004025120/3505010.6500501502TY 8SS8050NPN1001500402585/30010010.58008080Y1 9SS8550PNP1001500402585/30010010.58008080Y2 10C1815NPN20015060500130/400260.251001080HF 11A1015PNP2001505050130/400260.31001080BA 12C945NPN2001506050130/400160.310010150CR 13A733PNP2001506050120/475160.31001050CS 142SC1623NPN200100605090/600160.310010250L4、L5、L6、L7 15M28S NPN20010004020300/1000010010.556002010028S 16M8050NPN2001000402580/30010010.580080150Y11 17M8550PNP2001000402585/30010010.580080150Y21 18MMBT5551NPN30060018016080/25010 5.O0.550 5.O80G1 19MMBT5401PNP300600160150100/20010 5.O0.5500.51002L 20MMBTA42NPN300300300300100/20010100.2202501D 21MMBTA92NPN300300300300100/20010100.2202502D 222SC2412NPN2001506050120/560160.4505180BQ、BR、BS 232SC3356NPN300100201250/30020100.51057000R23、R24、R25 242SC3837NPN30050301856/39010100.52041500CN、CP、CQ、CR 252SC3838NPN30050201156/3905100.51053200AN、AP、AQ、AR 26BC807-16PNP2255005045100/25010010.7500502005A 27BC807-25PNP2255005045160/40010010.7500502005B 28BC807-40PNP2255005045250/60010010.7500502005C 29BC817-16NPN2255005045100/25010010.7500502006A 30BC817-25NPN2255005045160/40010010.7500502006B 31BC817-40NPN2255005045250/60010010.7500502006C 32BC846A NPN2251008065110/220250.610051001A 33BC846B NPN2251008065200/450250.610051001B 34BC847A NPN2251005045110/220250.610051001E 35BC847B NPN2251005045200/450250.610051001F 36BC847C NPN2251005045420/800250.610051001G 37BC848A NPN2251003030110/220250.610051001J 38BC848B NPN2251003030200/450250.610051001K 39BC848C NPN2251003030450/800250.610051001L 40BC858A PNP2251008065125/250250.6510051003A 41BC858B PNP2251008065220/475250.6510051003B 42BC857A PNP2251005045125/250250.6510051003E 43BC857B PNP2251005045220/475250.6510051003F 44BC875C PNP2251005045420/800250.6510051003G

S9018三极管参数 TO-92三极管S9018规格书

3.COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) FEATURES z High Current Gain Bandwidth Product MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E = 0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 18 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 4 V Collector cut-off current I CBO V CB =20V,I E = 0 0.1 nA Collector cut-off current I CEO V CE =15V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =1mA 28 270 Collector-emitter saturation voltage V CE(sat) I C =10mA,I B =1mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =10mA,I B =1mA 1.42V Transition frequency f T V CE =5V,I C =50mA,f=400MHz 800 MHz CLASSIFICATION OF h FE RANK D E F G H I J RANGE 28-45 39-60 54-80 72-108 97-146 132-198 180-270 Symbol Parameter Value Unit V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 18 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 50 mA P C Collector Power Dissipation 0.4 W R θJA Thermal Resistance From Junction To Ambient 312.5 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150℃ A,Jun,2011 https://www.wendangku.net/doc/b116823984.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

20V转5V,20V转3.3V的LDO芯片规格书

40V高输入电压LDO线性稳压器一般说明 PW6206系列是一款高精度，高输入电压，低静态电流，高速，低压降线性稳压器具有高纹波抑制。在VOUT=5V&VIN=7V时，输入电压高达40V，负载电流高达300mA，采用BCD工艺制造。PW6206提供过电流限制、软启动和过热保护，以确保设备在良好的条件下工作 PW6206调节器有标准SOT89-3L和SOT23-3L封装。标准产品无铅无卤。 特点 ?输入电压：4.75V~40V ?输出电压：1.8V~5.7V ?输出精度：<±2% ?输出电流：150mA（典型值） ?最高300mA@VIN=7V，VOUT=5V，PW6206B50HV封装 ?电源抑制比：60dB@100Hz ?跌落电压：600mV@IOUT=100mA ?静态电流：4.2μA@VIN=12V（典型值） ?ESD HBM:8KV ?推荐电容器：10uF 应用芯片135代2845理8039 Mr。郑，技术工程FAE ?智能电表 ?车内娱乐 ?电动自行车 典型应用电路

应用信息 输入电容器 VIN 和GND 引脚之间需要10μF 的输入电容。电容器应尽可能靠近VIN 引脚，建议使用电解电容器。必须考虑公差和温度系数，以确保电容器在整个温度和工作条件范围内工作。 输出电容器

在实际应用中，选择输出电容器以保证其稳定运行是非常重要的。稳定和正确操作的最小电容为1μF。电容公差应在工作温度范围内±30%或更好。建议电容器类型为MLCC。 空载稳定性 PW6206将在无外部负载的情况下保持稳定和调节。这在CMOS RAM保持活动应用中尤其重要。 典型电路 下图显示了PW6206设备的典型应用电路。根据应用情况，应仔细选择外部组件的值。在插拔应用中，由于芯片上电源的插入和拔出引起的过冲会损坏芯片，因此建议VIN小于30V，输入电压峰值不超过45V。 在封堵应用中，建议R、Cin选用如下： 1Cin=10UF~100UF电解电容器，最大电压大于50V，R=0； 2Cin=1UF~10UF MLCC，最大电压V大于50V，R=2Ω，1206型电阻器应仔细选择，以确保有足够的裕度来承受插入期间的浪涌电流。

各种三极管参数

Author: admin Category: [ IC品牌 ] No comments 品名极性管脚功能参数 MPSA42 NPN 21E 电话视频放大 300V0.5A0.625W MPSA92 PNP 21E 电话视频放大 300V0.5A0.625W MPS2222A NPN 21 高频放大 75V0.6A0.625W300MHZ 9011 NPN EBC 高频放大 50V30mA0.4W150MHz 9012 PNP 贴片低频放大 50V0.5A0.625W 9013 NPN EBC 低频放大 50V0.5A0.625W 9013 NPN 贴片低频放大 50V0.5A0.625W 9014 NPN EBC 低噪放大 50V0.1A0.4W150MHZ 9015 PNP EBC 低噪放大 50V0.1A0.4W150MHZ 9018 NPN EBC 高频放大 30V50MA0.4W1GHZ 8050 NPN EBC 高频放大 40V1.5A1W100MHZ 8550 PNP EBC 高频放大 40V1.5A1W100MHZ 2N2222 NPN 4A 高频放大 60V0.8A0.5W25/200NSβ=45 2N2222A NPN 小铁高频放大 75V0.6A0.625W300MHZ 2N2369 NPN 4A 开关 40V0.5A0.3W800MHZ 2N2907 NPN 4A 通用 60V0.6A0.4W26/70NSβ=200 2N3055 NPN 12 功率放大 100V15A115W 2N3440 NPN 6 视放开关 450V1A1W15MHZ 2N3773 NPN 12 音频功放开关 160V16A150W COP 2N6609 2N3904 NPN 21E 通用 60V0.2Aβ=100-400 2N3906 PNP 21E 通用 40V0.2Aβ=100-400 2N5401 PNP 21E 视频放大 160V0.6A0.625W100MHZ 2N5551 NPN 21E 视频放大 160V0.6A0.625W100MHZ 2N5685 NPN 12 音频功放开关 60V50A300W 2N6277 NPN 12 功放开关 180V50A250W 2N6609 PNP 12 音频功放开关 160V15A150W COP 2N3773 品名极性管脚功能参数 2N6678 NPN 12 音频功放开关 650V15A175W15MHZ 2N6718 NPN 小铁音频功放开关 100V2A2W50MHZ 3DA87A NPN 6 视频放大 100V0.1A1W 3DG6A NPN 6 通用 15V20mA0.1W100MHz 3DG6B NPN 6 通用 20V20mA0.1W150MHz 3DG6C NPN 6 通用 20V20mA0.1W250MHz 3DG6D NPN 6 通用 30V20mA0.1W150MHz 3DG12C NPN 7 通用 45V0.3A0.7W200MHz 3DK2B NPN 7 开关 30V30mA0.2W 3DK4B NPN 7 开关 40V0.8A0.7W 3DK7C NPN 7 开关 25V50mA0.3W 3DD15D NPN 12 电源开关 300V5A50W 3DD102C NPN 12 电源开关 300V5A50W

MMBTA93贴片三极管规格书

A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA93 TRANSISTOR (PNP) FEATURES ● High Voltage Application ● T elephone Application ● Complementary to MMBTA43 MARKING:YW MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -200 V V CEO Collector-Emitter Voltage -200 V V EBO Emitter-Base Voltage -5 V I C Collector Current -500 mA P C Collector Power Dissipation 350 mW R ΘJA Thermal Resistance From Junction To Ambient 357 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -200 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -200 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-200V, I E =0 -0.25 μA Collector cut-off current I CEO V CE =-200V, I B =0 -0.25 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.1 μA h FE(1)* V CE =-10V, I C =-10mA 40 h FE(2*) V CE =-10V, I C =-1mA 25 DC current gain h FE(3)* V CE =-10V, I C =-30mA 25 Collector-emitter saturation voltage V CE(sat)* I C =-20mA, I B =-2mA -0.5 V Base-emitter saturation voltage V BE(sat)* I C =-20mA, I B =-2mA -0.9 V Transition frequency f T V CE =-20V,I C =-10mA, f=100MHz 50 MHz Collector output capacitance C ob V CB =-20V, I E =0, f=1MHz 8 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. 3. COLLECTOR https://www.wendangku.net/doc/b116823984.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

长电2N4402三极管规格书

A,Dec,2010 3. COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4402 TRANSISTOR (PNP) FEATURES z General Purpose Amplifier Transistor MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -0.1mA,I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B = 0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-0.1mA,I C =0 -5 V Collector cut-off current I CBO V CB =-40V,I E = 0 -0.1μA Emitter cut-off current I EBO V EB =-4V,I C = 0 -0.1μ A V CE =-1V, I C =-1mA 30 V CE =-1V, I C = -10mA 50 V CE =-2V, I C = -150mA 50 150 DC current gain h FE * V CE =-2V, I C = -500mA 20 I C =-150mA,I B =-15mA -0.4V Collector-emitter saturation voltage V CE(sat)* I C =-500mA,I B = -50mA -0.75V I C =-150mA,I B =-15mA -0.75 -0.95V Base-emitter saturation voltage V BE (sat)* I C =-500mA,I B =-50mA -1.3V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 8.5 pF Emitter input capacitance C ib V EB =-0.5V,I C =0, f=1MHz 30 pF Transition frequency f T V CE =-10V,I C =-20mA, f=100MHz 150 MHz *Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%. Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -0.6 A P C Collector Power Dissipation 625 mW R θJA Thermal Resistance From Junction To Ambient 200 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.wendangku.net/doc/b116823984.html, 【南京南山半导体有限公司 — 长电三极管选型资料】

红外遥控器6122芯片规格书

WD6122 红外遥控发射电路 WD6122 芯片是通用红外遥控发射集成电路,采用CMOS 工艺制造,最多可外接64个按键,并有三组双重按键。封装形式为SOP-24和SOP-20。 一.特点 z低压CMOS 工艺制造 z工作电压范围宽 z通过外部接法最多可产生65536种用户码 z可通过SEL管脚选择，最多可支持128+ 6条指令码 z SOP-24、SOP-20、COB封装形式可选 二. 应用范围 z VCD、DVD 播放机、电视机、组合音响设备、电视机顶盒 三. 产品规格分类 z WD6122-001：SEL2接GND ，ROM中数据为0 z WD6122-002：SEL2接ＶＤＤ，用户专用模式 四. 结构框图

WD6122 红外遥控发射电路 五. 管脚图及管脚说明 1. 管脚图 2. 管脚说明 管脚号 符号 输入输出 功能描述 23、24、1~6 KI0-KI7 I 键扫描输入端 7 REM O 数据输出管脚（遥控输出） 8 Vdd 电源正极 9 SEL I 选择管脚 10 OSCO O 振荡器管脚（输出） 11 OSCI I 振荡器管脚（输入） 12 Vss 电源负极 13 LMP O 输出LED指示（呈闪烁状态） 21~14 KI/O0~KI/O7I/O 键扫描输入/输出管脚 22 CCS I 键扫描输入

WD6122 红外遥控发射电路 六. 功能说明 1. 编码方式 WD6122 所发射的一帧码含有一个引导码，16位的用户编码和8位的键数据码、键数据码的反码也同时被传送。码型结构如下： 引导码由一个9ms的载波波形和4.5ms的关断时间构成，它作为随后发射的码的引导，这样当接收系统是由微处理器构成的时候，能更有效地处理码的接收与检测及其它各项控制之间的时序关系。编码采用脉冲位置调制方式（PPM）。利用脉冲之间的时间间隔来区分“0”和“1”。每次8位的码被传送之后，它们的反码也被传送，减少了系统的误码率。 2．键盘输入矩阵 WD6122键盘输入矩阵请参考下图： 3．按键输入 WD6122 在键扫描输入端KI0~KI7 和键扫描定时信号输入/输出端KI/O0~KI/O7构成的8×8 矩阵上共设置64 个按键。 只有第21#键与其它连在KI/O5 线上的键即22# 、23# 、24#键组合才能实现双重按键功能。即只有下列按键的组合才能进行双重按键操作。 1) 21#键与22#键；2 ）21#键与23#键；3 ）21#键与24#键 每个键输入端与电源负端VSS之间均接有下拉电阻。当有超过一个以上的按键（除非双重按键的组合21#与22#键21#与23#键21#与24#键）同时按下时，码的发射输出将停止。 当一个键按下时先读取用户码和键数据码，22ms后遥控输出端（REM）启动输出，按键时间只有超过22ms才能输出一帧码，超过108ms后才能输出第二帧码。 Edited by Foxit Reader Copyright(C) by Foxit Corporation,2005-2010For Evaluation Only.