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SUD19N20-90-E3中文资料

Vishay Siliconix

SUD19N20-90-E3中文资料

SUD19N20-90

N-Channel 200-V (D-S) 175 °C MOSFET

FEATURES

?TrenchFET ? Power MOSFET ?175 °C Junction Temperature ?PWM Optimized ?

100 % R g Tested

APPLICATIONS

?Primary Side Switch

PRODUCT SUMMARY

V DS (V)r DS(on) (Ω)I D (A)200

0.090 at V

SUD19N20-90-E3中文资料

GS = 10 V 190.105 at V GS = 6 V

17.5

SUD19N20-90-E3中文资料

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

b. See SOA curve for voltage derating.

*Pb containing terminations are not RoHS compliant, exemptions may apply

SUD19N20-90-E3中文资料

ABSOLUTE MAXIMUM RATINGS T A = 25°C, unless otherwise noted

Parameter

Symbol Limit U

nit Drain-Source Voltage V DS 200V

Gate-Source Voltage

V GS ± 20Continuous Drain Current (T J = 175 °C)b T C = 25 °C I D 19A

T C = 125 °C

11Pulsed Drain Current

I DM 40Continuous Source Current (Diode Conduction)I S 19Avalanche Current

I AS 19Single Pulse Avalanche Energy L = 0.1 mH E AS 18mJ Maximum Power Dissipation

T C = 25 °C P D 136b W T A = 25 °C 3a Operating Junction and Storage T emperature Range

T J , T stg

- 55 to 175

°C THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical Maximum

U

nit

Junction-to-Ambient a t ≤ 10 sec R thJA 1518°C/W Steady State

4050Junction-to-Case (Drain)

R thJC

0.85

1.1

SUD19N20-90-E3中文资料

Vishay Siliconix

SUD19N20-90

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25°C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ a Max Unit Static

Drain-Source Breakdown Voltage V (BR)DSS V GS = 0 V , I D = 250 μA 200V Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 2

4Gate-Body Leakage

I GSS V DS = 0 V, V GS = ± 20 V ± 100nA

Zero Gate Voltage Drain Current I DSS V DS = 200 V , V GS = 0 V 1μA V DS = 200 V, V GS = 0 V , T J = 125 °C 50V DS = 200 V, V GS = 0 V , T J = 175 °C

250

On-State Drain Current b

I D(on)

V DS = 5 V , V GS = 10 V 40

A Drain-Source On-State Resistance b

r DS(on)

V GS = 10 V, I D = 5 A

0.075

0.090Ω

V GS = 10 V, I D = 5 A, T J = 125 °C 0.190V GS = 10 V, I D = 5 A, T J = 175 °C

0.260V GS = 6 V, I D = 5 A

0.0820.105

Forward T ransconductance b g fs

V DS = 15 V , I D = 19 A

35

S Dynamic a

Input Capacitance C iss V GS = 0 V , V DS = 25 V , F = 1 MHz

1800pF

Output Capacitance

C oss 180Reverse Transfer Capacitance C rss 80Total Gate Charge c Q g V DS = 100 V , V GS = 10 V , I

D = 19 A 3442

nC Gate-Source Charge c Q gs 8Gate-Drain Charge c Q gd 12

Gate Resistance R g 0.5

2.9Ω

Turn-On Delay Time c t d(on) V DD = 100 V, R L = 5.2 Ω

I D ? 19 A, V GEN = 10 V , R g = 2.5 Ω

1525ns Rise Time c

t r 5075Turn-Off Delay Time c t d(off) 3045Fall Time c t f 60

90Source-Drain Diode Ratings and Characteristics (T C = 25°C)

Pulsed Current I SM 50A Diode Forward Voltage b

V SD I F = 19 A, V GS = 0 V 0.9 1.5V Source-Drain Reverse Recovery Time

t rr

I F = 19 A, di/dt = 100 A/μs

180

250

ns

SUD19N20-90-E3中文资料

Output Characteristics

SUD19N20-90-E3中文资料

SUD19N20-90-E3中文资料

Transconductance

Transfer Characteristics

SUD19N20-90-E3中文资料

SUD19N20-90-E3中文资料

Gate Charge

SUD19N20-90-E3中文资料

Vishay Siliconix

SUD19N20-90

TYPICAL CHARACTERISTICS 25°C unless noted

THERMAL RATINGS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.wendangku.net/doc/b177a004844769eae009eda8.html/ppg?71767.

On-Resistance vs. Junction Temperature

SUD19N20-90-E3中文资料

Source-Drain Diode Forward Voltage

SUD19N20-90-E3中文资料

SUD19N20-90-E3中文资料

vs. Case Temperature

SUD19N20-90-E3中文资料

SUD19N20-90-E3中文资料

Disclaimer Legal Disclaimer Notice

SUD19N20-90-E3中文资料

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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