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2N7002K-7;中文规格书,Datasheet资料

Product Summary

V (BR)DSS

R DS(ON) max I D max T A = 25°C 60V

2? @ V GS = 10V

380mA 3? @ V GS = 5V

310mA

Features and Benefits

? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Device (Notes 1 and 2) ? ESD Protected Up To 2kV ? Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Motor control ? Power Management Functions ? Backlighting

Mechanical Data

? Case: SOT23

? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminals: Finish ? Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 ? Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

2N7002K-7 Commercial SOT23 3000/Tape & Reel 2N7002KQ-7 Automotive SOT23 3000/Tape & Reel

2N7002K-13 Commercial SOT23 10000/Tape & Reel 2N7002KQ-13 Automotive SOT23 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at https://www.wendangku.net/doc/b34686832.html,. 3. For packaging details, go to our website at https://www.wendangku.net/doc/b34686832.html,.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code T U V W

X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D SOT23Top View ESD protected up to 2kV Top View Equivalent Circuit K = SAT (Shanghai Assembly/ Test site) C = CAT (Chengdu Assembly/ Test site) 7K= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Chengdu A/T Site Shanghai A/T Site C7K Y M

K7K

Y M

Maximum Ratings @T A = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage V DSS

60 V Gate-Source Voltage V GSS

±20 V Continuous Drain Current (Note 5) V GS = 10V

Steady State T A = 25°C T A = 70°C

I D

380

300 mA t<5s T A = 25°C T A = 70°C

I D

430

340 mA Continuous Drain Current (Note 5) V GS = 5V

Steady State T A = 25°C T A = 70°C

I D

310

240 mA t<5s T A = 25°C T A = 70°C

I D

350

270 mA Maximum Continuous Body Diode Forward Current (Note 5) I S

0.5 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) (Note 5) I DM

1.2 A

Thermal Characteristics @T A = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) P D

370 mW Thermal Resistance, Junction to Ambient (Note 4) Steady State R θJA

357

°C/W t<5s 292

Total Power Dissipation (Note 5) P D

540 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State

R θJA

240 °C/W

t<5s 197 Thermal Resistance, Junction to Case (Note 5) R θJC

91 Operating and Storage Temperature Range T J, T STG

-55 to 150 °C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 60 ? ? V V GS = 0V, I D = 10μA Zero Gate Voltage Drain Current I DSS ? ? 1.0 μA V DS = 60V, V GS = 0V Gate-Source Leakage I GSS ? ? ±10 μA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS(th) 1.0 1.6 2.5 V V DS = 10V, I D = 1mA

Static Drain-Source On-Resistance R DS (ON)

? ?

? 2.0 3.0 Ω V GS = 10V, I D = 0.5A V GS = 5V, I D = 0.05A

Forward Transfer Admittance |Y fs | 80 ? ? ms V DS =10V, I D = 0.2A Diode Forward Voltage V SD ? 0.75 1.1 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss ?

30 50 pF V DS = 25V, V GS = 0V

f = 1.0MHz

Output Capacitance C oss ?

4.2 25 pF Reverse Transfer Capacitance C rss ?

2.9 5.0 pF Gate Resistance R g

? 133 ? m ? f = 1MHz , V GS = 0V, V DS = 0V Total Gate Charge Q g

? 0.3 ? nC V GS = 4.5V, V DS = 10V,

I D = 250mA

Gate-Source Charge Q gs

? 0.2 ? nC Gate-Drain Charge Q gd

? 0.08 ? nC Turn-On Delay Time t D(on)

? 3.9 ? ns V DD = 30V, V GS = 10V, R G = 25?, I D = 200mA Turn-On Rise Time t r

? 3.4 ? ns Turn-Off Delay Time t D(off)

? 15.7 ? ns Turn-Off Fall Time t f

? 9.9 ? ns Notes:

4. Device mounted on FR-4 PCB, with minimum recommended pad layout

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

V , DRAIN-SOURCE VOLTAGE (V)Fig. 1 Typical Output Characteristics

DS I , D R A I N C U R R E N T (A )

V , GATE-SOURCE VOLTAGE (V)Fig. 2 Typical Transfer Characteristics

GS T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

ch 00.5

1.5

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current D

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current D

V GATE SOURCE VOLTAGE (V)

GS ,Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage

Fig. 7 CH Static Drain-Source On-State Resistance

vs. Channel T emperature

I , DRAIN CURRENT (A)

D Fig.10 Forward Transfer Admittance vs. Drain Current

|Y |, F O R W A R D T R A N S F E R A D M I T T A N C E (S )

Fig. 11 Safe Operation Area

V , DRAIN-SOURCE VOLTAGE (V)

DS I , D R A I N C U R R E N T (A )

D t1, PULS

E DURATION TIME (sec)

Fig. 12 Single Pulse Maximum Power Dissipation

P , P E A K T R A N S I E N T P O I W E R (W )

(P K )

t1, PULSE DURATION TIME (sec)Fig. 13 Transient Thermal Resistance

r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E

Package Outline Dimensions Suggested Pad Layout

SOT23

Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11

0° 8°

- All Dimensions in mm

Dimensions Value (in mm)

2.9 X 0.8 Y 0.9 C 2.0 E 1.35

X E

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

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2N7002K-7