PMV20XN,215;中文规格书,Datasheet资料
1.Product profile
1.1General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2Features and benefits
?Low threshold voltage ?Very fast switching
?Trench MOSFET technology
1.3Applications
?Relay driver
?High-speed line driver
?Low-side loadswitch ?Switching circuits
1.4Quick reference data
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm 2.
PMV20XN
30 V, 4.8 A N-channel Trench MOSFET
Rev. 1 — 5 April 2011
Product data sheet
Table 1.Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j =25°C
--30V V GS gate-source voltage -12-12V I D drain current V GS =4.5V;T amb =25°C [1]
-- 4.8A Static characteristics
R DSon
drain-source on-state resistance
V GS =4.5V;I D =4.8A; T j =25°C
-
19
25
m ?
2.Pinning information
3.Ordering information
4.Marking
[1]
% = placeholder for manufacturing site code
Table 2.Pinning information Pin Symbol Description Simplified outline
Graphic symbol
1G gate SOT23 (TO-236AB)
2S source 3
D
drain
1
2
3
Table 3.
Ordering information
Type number
Package Name
Description
Version PMV20XN
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
Table 4.Marking codes
Type number
Marking code [1]PMV20XN
KW%
5.Limiting values
Table 5.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j=25°C-30V
V GS gate-source voltage-1212V
I D drain current V GS=4.5V;T amb=25°C[1]- 4.8A
V GS=4.5V;T amb=100°C[1]-3A
I DM peak drain current T amb=25°C; single pulse; t p≤10μs-20A
P tot total power dissipation T amb=25°C[2]-510mW
[1]-930mW
T sp=25°C-4170mW T j junction temperature-55150°C T amb ambient temperature-55150°C T stg storage temperature-65150°C Source-drain diode
I S source current T amb=25°C[1]-1A
[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
6.Thermal characteristics
[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm 2.
Table 6.Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit R th(j-a)
thermal resistance from junction to ambient
in free air
[1]-207245K/W [2]
-116135K/W R th(j-sp)
thermal resistance from junction to solder point
-
20
30
K/W
7.Characteristics
Table 7.Characteristics
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source
breakdown voltage
I D=250μA; V GS=0V; T j=25°C30--V
V GSth gate-source threshold
voltage
I D=250μA; V DS=V GS; T j=25°C0.51 1.5V
I DSS drain leakage current V DS=30V;V GS=0V; T j=25°C--1μA
V DS=30V;V GS=0V; T j=150°C--20μA I GSS gate leakage current V GS=12V; V DS=0V; T j=25°C--100nA
V GS=-12V;V DS=0V; T j=25°C--100nA
R DSon drain-source on-state
resistance V GS=4.5V;I D=4.8A; T j=25°C-1925m?V GS=4.5V;I D=4.8A; T j=150°C-3140m?V GS=2.5V;I D=4A; T j=25°C-2635m?
g fs forward
transconductance
V DS=5V; I D=3A;T j=25°C-8-S Dynamic characteristics
Q G(tot)total gate charge I D=3A;V DS=15V; V GS=4.5V;
T j=25°C - 6.410nC
Q GS gate-source charge- 1.8-nC Q GD gate-drain charge- 1.1-nC
C iss input capacitance V GS=0V;V DS=15V; f=1MHz;
T j=25°C -585-pF
C oss output capacitance-110-pF C rss reverse transfer
capacitance
-55-pF
t d(on)turn-on delay time V DS=15V;V GS=5.4V; R G(ext)=6?;
T j=25°C;I D=4.8A -12-ns
t r rise time-27-ns t d(off)turn-off delay time-128-ns t f fall time-68-ns Source-drain diode
V SD source-drain voltage I S=1A; V GS=0V; T j=25°C-0.75 1.2V
8.Test information
分销商库存信息: NXP
PMV20XN,215