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DMN26D0UFB4-7;中文规格书,Datasheet资料

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V (BR)DSS

R DS(on) I D T A = 25°C 20V

3.0Ω @ V GS =

4.5V 240mA 6.0Ω @ V GS = 1.8V

170mA

Description and Applications

This new generation MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management applications.

? DC-DC Converters ? Power management functions

Features and Benefits

? N-Channel MOSFET ? Low On-Resistance:

? 3.0 Ω @ 4.5V ? 4.0 Ω @ 2.5V ? 6.0 Ω @ 1.8V ? 10 Ω @ 1.5V ? Very Low Gate Threshold Voltage, 1.05V max ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package, 0.4mm Maximum Package

Height ? ESD Protected Gate ? Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) ? "Green" Device (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

? Case: X2-DFN1006-3

? Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminal Connections: See Diagram ? Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208 ? Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Case

Packaging

DMN26D0UFB4-7 X2-DFN1006-3 3,000/Tape & Reel DMN26D0UFB4-7B

X2-DFN1006-3

10,000/Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at https://www.wendangku.net/doc/b75090859.html,.

3. For packaging details, go to our website at https://www.wendangku.net/doc/b75090859.html,.

Marking Information

X2-DFN1006-3

Bottom View

Equivalent Circuit Top View

Body Diode

ESD PROTECTED

DMN26D0UFB4-7B DMN26D0UFB4-7 Top View

Dot Denotes Drain Side

Top View Bar Denotes Gate

M1 = Product Type Marking Code

Maximum Ratings @T A = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain Source Voltage V DSS

20 V Gate-Source Voltage V GSS

±10 V Continuous Drain Current (Note 4) V GS = 4.5V

Steady State T A = 25°C T A = 70°C

I D 240

190 mA Continuous Drain Current (Note 4) V GS = 1.8V

Steady State T A = 25°C T A = 70°C

I D 180

140 mA Pulsed Drain Current - T P = 10μs I DM

805 mA

Thermal Characteristics @T A = 25°C unless otherwise specified

Total Power Dissipation (Note 4) @T A = 25°C P D 350 mW Thermal Resistance, Junction to Ambient (Note 4) R θJA 357 °C/W Operating and Storage Temperature Range T J , T STG

-55 to +150 °C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic Symbol

Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV DSS 20 ? ? V V GS = 0V, I D = 100μA

Zero Gate Voltage Drain Current @ T C = 25°C I DSS ? ? 500 nA V DS = 20V, V GS = 0V

Gate-Body Leakage

I GSS ? ? ±1 ±100 μA

nA V GS = ±10V, V DS = 0V V GS = ±5V, V DS = 0V

ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

V GS(th) 0.45

1.05 V V DS = V GS , I D = 250μA

Static Drain-Source On-Resistance R DS (ON)? ?

? ? 1.8

2.5

3.4

4.7 3.0 4.0 6.0 10.0 Ω

V GS = 4.5V, I D = 100mA V GS = 2.5V, I D = 50mA V GS = 1.8V, I D = 20mA V GS = 1.5V, I D = 10mA

Forward Transconductance

|Y fs |

180 242 ? mS V DS = 10V, I D = 0.1A Source-Drain Diode Forward Voltage V SD 0.5 ? 1.4 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ? 14.1 ? pF V DS = 15V, V GS = 0V f = 1.0MHz

Output Capacitance

C oss ? 2.9 ? pF Reverse Transfer Capacitance C rss ? 1.6 ? pF

SWITCHING CHARACTERISTICS Turn-On Delay Time t d(on) ? 3.8 ? ns

V GS = 4.5V, V DD = 10V I D = 200mA, R G = 2.0?

Rise Time

t r ? 7.9 ? Turn-Off Delay Time t d(off) ? 13.4 ? Fall Time

t f

15.2

Notes:

4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

5. Short duration pulse test used to minimize self-heating effect.

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)DS I , D R A I N C U R R E N T (A )

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)GS I , D R A I N C U R R E N T (A )

0.01

0.1

Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)D R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S (O N )Ω

0.01

0.1

I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature

R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S (O N )ΩFig. 5 On-Resistance Variation with T emperature

T , AMBIENT TEMPERATURE (°C)

A R , D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )

D S O N

Fig. 6 On-Resistance Variation with T emperature

T , AMBIENT TEMPERATURE (°C)

A R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S O N Ω

Fig. 7 Gate Threshold Variation vs. Ambient T emperature

T , AMBIENT TEMPERATURE (°C)

A V , G A T E T H R E S H O L D V O L T A G E (V )

G S (T H )

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD I , S O U R C E C U R R E N T (A )

S Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)

DS C , C A P A C I T A N C E (p F )

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS I , L E A K A G E C U R R E N T (n A )

D S S

r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)1

Package Outline Dimensions

Suggested Pad Layout

X2-DFN1006-3

Dim Min Max Typ A ? 0.40 ? A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e ? ?

0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 ? ?

0.40

All Dimensions in mm

Dimensions

Value (in mm)

Z 1.1 G1 0.3 G2 0.2 X 0.7 X1 0.25 Y 0.4 C 0.7

X 1Z

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

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DMN26D0UFB4-7