MTP50N06EL中文资料

Designer's?Data Sheet

TMOS E-FET?

Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

?Avalanche Energy Specified

?Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

?Diode is Characterized for Use in Bridge Circuits

?I DSS and V DS(on) Specified at Elevated T emperature

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Designer’s Data for “Worst Case” Conditions—The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves—representing boundaries on device characteristics—are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

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SEMICONDUCTOR TECHNICAL DATA

MTP50N06EL

TMOS POWER FET

50 AMPERES

60 VOLTS

R DS(on) = 0.028 OHM

Motorola Preferred Device

G

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